22FDX ®

22nm FD-SOI Technology

Highlights GLOBALFOUNDRIES 22FDX®­22nm FD-SOI (Fully-Depleted Silicon-On-

• 22nm FD-SOI technology Insulator) process technology platform delivers cost effective performance
+ Manufactured in state-of-the-art fab for connected and low power embedded applications.
in Dresden, Germany 22nm FD-SOI transistor technology delivers FinFET-like performance and
+ Includes ultra-low-power with energy-efficiency, including up to 70% lower power vs. 28nm. The simulta-
0.4V operation
neous high Ft /high Fmax, high self gain and high current efficiency of 22FDX
+ Transistor back-gate biasing
enables efficient, ultra low power analog/RF/mmWave designs.
for enhanced performance, and
lower power and reduced area
+ World-class Fmax; Unique FET FD-SOI
stacking for high-Pout/high-PAE – Fully-Depleted
mmWave PA and switches; Silicon-On-Insulator
Lowest power mmWave LNA – Planar process
+ Bulk-like self-heating effect similar to bulk Fully Depleted
Ultra-thin Channel
+ Superior radiation immunity with for Low Leakage
>30x/1000x lower SCU/MCU SER
Thin Buried
+ Integrated RF and mmWave SoC Oxide Insulator
for 5G architectural innovation and
reduced system cost
• Low power embedded applications
+ Automotive (ADAS, IVI)
+ IoT, Wearables Target Applications and Platform Solutions
+ Networking and WiFi Automotive
5G, LTE and Mid/low-tier
+ 5G: <6GHz and mmWave handset IoT / Wearables mmWave Radar,
802.11ac/ax/ad Apps Processor
solutions, backhaul, base stations MCU, ADAS
+ LEO satellite communications Enables new RF architectures Low power operation Full-node scaling benefits High Pout for long-range
• 35-50% die shrink down to 0.4V in PPAC vs. 28nm radar @77GHz in single-
+ mmWave radar • 40-50% lower power for RF • 1pA/cell standby • <60% power @ iso-perf. chip auto radar system
• Comprehensive design ecosystem Tx/Rx (vs. 28nm) • 80% lower total • ~1.3X perf. @ iso-power for low latency, lower
power (vs. 40nm) • ~70% area power, and lower cost
+ Leverages bulk digital design flows
and existing EDA tools
Integrated mmWave PA with High performance (RF) Adaptive body bias GLOBALFOUNDRIES
+ Fully enabled with foundation IP and high PSAT via FET stacking LDMOS for integrated PA enables additional PPAC AutoPro™ Service
application-specific complex IP and switch & power gains by compensating for Package
• Complete services and support management PVT variability and aging
+ Design starter kit, MPWs, prototyping
Highest ft/fmax Fully integrated & Roadmap to 12nm FD-SOI Automotive G2/G1
+ Advanced packaging and test for 5G/mmWave versatile eMRAM for for next-gen designs including eMRAM
solutions, including 2.5D/3D products storage & compute
 22FDX®
Technology Overview Application-optimized Solutions
• Four core device Vt’s (FBB, RBB & eLVT) - Integrated RF and analog with high fT/fMAX
Analog, - WiFi & BT combo, LTE transceivers
• Two I/O Vt’s @ 1.2V/1.5V/1.8V RF/mmWave - Low power 5G and mmWave technologies
• Full set of active and passive devices - Ultra-low static leakage (~1pA/μm)
Ultra Low
• LDMOS (3.3V/5.0V/6.5V) - ULL SRAM with <1pA/cell leakage
Leakage
- IoT, Wearables, Smartcard applications
• Low power: 0.4V to 0.8V Vnom
Ultra Low - Flexible power options as low as 0.4V
• Reference flow for back-gate biasing Power - Consumer, mobile, Auto IVI applications
• RF BEOL /w ultra thick metal stacks
- Fully integrated, versatile memory
• Standard temperature range: –40°C to 125°C eMRAM for storage and compute for IoT and MCU
(in development)
IP Overview Automotive - Grade 1 for under-the-hood automotive/
The 22FDX Platform IP portfolio includes a wide range industrial (in development); Grade 2
of silicon-proven high performance, power-optimized
solutions for a broad set of applications. Architected for Effective Back-gate Biasing
Technology back-gate biasing feature enables dynamic
Foundation IP tradeoffs between power, performance and leakage and
Standard Cell Low Power/Performance/Dense/Low Leakage Libraries provides the greatest design flexibility.
Memory HP/HD/ULL/TP/DP, SRAM, Register File, ROM Forward Body Bias (FBB)
GPIO 1.2-1.8V/3.3V, ESD • 50% lower power at same frequency (vs 28nm)
• Up to 40% faster performance at same power (vs 28nm)
Body Bias Body Bias Generator, Dynamic Body-bias Controller
Reverse Body Bias (RBB)
Interface IP • Reduces leakage to 1pA/micron in standby mode
DDR3/4 LPDDR3/4 USB2/3.x PCIe SATA
SERDES MIPI D-PHY/ HDMI 2.0 LVDS XAUI
High Performance and Low Power
M-PHY
Frequency vs. Total Power
Wireless Connectivity IP Non-volatile Memory IP 239
240 50% Faster
47% Less Power

BLE WiFi NB-IoT Cat-M1 OTP eFuse 210 18% Less Po

wer
195
28 SLP 13%
More
Analog IP Core IP 180
22FDX Power
r
Powe

(no bias)
152
ADC/ Video Audio 173
PLL LS RISC-V
Less

DAC DAC CODEC 125

127 14LPP
92%
Total Power (mW)

Temp Process POR/

RTC Regulator
Sensor Monitor BOR
22FDX 0.4v
Contact GF for IP availability. 17
520 800 Frequency (MHz) 1200

Design and Manufacturing Ecosystem with FDXcelerator™ Partner Program

GLOBALSOLUTIONS is the sum of our internal Libraries Analog / Processor High-speed
EDA

(Standard Cells,
resources and ecosystem partners, combined Memories) Mixed-signal IP Interfaces OSAT IP
to efficiently enable the fastest time-to-volume. Full Suite PDK, Reference Flow
Customers
The FDXcelerator Partner Program facilitates
22nm FD-SOI Process Technology Design
ASIC
FDX™ SoC design, reduces time to market Services

and minimizes development costs. SoC Packaging 2.5D and 3D Packaging System
IP

2600 Great America Way, Santa Clara, CA 95054 USA

Tel: +1 408-462-3900 globalfoundries.com/contact-us
The information contained herein is the property of GLOBALFOUNDRIES and/or its licensors. This document is for informational purposes only, is current only as of the date of publication and is subject
to change by GLOBALFOUNDRIES at any time without notice. GLOBALFOUNDRIES, the GLOBALFOUNDRIES logo and combinations thereof are trademarks of GLOBALFOUNDRIES Inc. in the United
States and/or other jurisdictions. Other product or service names are for identification purposes only and may be trademarks or service marks of their respective owners. © GLOBALFOUNDRIES Inc.
2020. Unless otherwise indicated, all rights reserved. Do not copy or redistribute except as expressly permitted by GLOBALFOUNDRIES.
PB22FDX-2.6