UNIT - I
UNIT - I
2. Active Components
These components are those that have gain or directionality.
A capacitor is a device used to store and release electricity, usually as the result of a
chemical action. Also referred to as a storage cell, a secondary cell, a condenser or an
accumulator. A Leyden Jar was an early example of a capacitor. Capacitors are
further divided into two mechanical groups: Capacitors with Fixed-capacitance and
variable capacitors.
A Diode is an electronic component that allows electric current to flow in one
direction only. It is a semiconductor device that consists of a p-n junction. It can be
either forward biased or reverse biased.
They are most commonly used to convert AC to DC, because they pass the positive
(+) part of the wave, and block the negative (–) part of the AC signal, or, if they are
reversed, they pass only the negative part and not the positive part.
Types of a diode:
1. Light Emitting Diode: Light is generated when electric current flows through it.
2. Laser diode: Generates coherent light. It is widely utilized in CD drives, DVD
players, laser printers etc.
3. Photodiode: Current flow when exposed to light.
4. Schottky Diode: Diode with low voltage drop.
5. Tunnel Diode: Diode in which electric current decreases with increase in
voltage.
6. Varactor / Varicap Diode: Diode with Variable capacitance.
7. Zener Diode: Current flows in one direction, but also can flow in the reverse
direction when above breakdown voltage.
Farad: One farad is defined as the capacitance of a capacitor which required a charge
of one coulomb to
establish a potential difference of one volt between its plates.
Factors controlling the capacitance of a capacitor
I. Plate area : capacitance of a capacitor is directly proportional to area of plates
CαA
II. Distance between two plates: Capacitance of a capacitor is inversely proportional
to distance between the two plates.
C α 1/d
III. Type of Di-electric material : The capacitance of a capacitor depends upon the di-
electric constant of the insulating material used Hence capacitance of capacitor given
by
C = єrє0A/D
Where єr is relative permittivity of free space and Where є0 is permittivity of free
space which is given by 8.85x10-12.Relative permittivity of some of the material is
given below
Material єr for Air or vacuum 1,Ceramic 50 to 300,Mica 3 to 6,Paper 3 to 5
Capacitor blocks DC and allows AC to pass through it.
Capacitor in Series:- Connecting capacitors in series is equivalent to increase the
thickness of capacitance and distance between the plates increases Hence the
combined capacitance will decrease as C α1/d. As d increases C will decrease. Hence
1/C=1/C1+1/C2+1/C3……..
Capacitors in parallel:- Connecting capacitors in parallel is equivalent to adding their
plate area, and therefore the value of capacitance increases . Hence net value of
capacitance
C=C1+C2+C3+…………
All capacitors commonly used in electronic circuits are generally divided into two
main categories.
1.Fixed Capacitors
Electrolytic Capacitors Non Electrolytic Capacitors
4. Inductor
conduction band the solids are classified into insulators, semiconductors and
conductors ,Insulators. The band structure of insulators is as shown in fig. The
energy gap between conduction band and valence band is very high and is about
10eV. The forbidden energy band is very wide. Due to this, electrons cannot jump
from valence band to conduction band. In insulator, the valence electrons are bound
very tightly to their parent atoms.
Energy Bands
For insulators, the gap can be crossed only when breakdown conditions occur as
when a very high voltage is applied across the material. The band gap is illustrated
in Figure for insulators. In semiconductors the band gap is smaller, allowing an
electron in the valence band to jump into the conduction band if it absorbs a photon.
The band gap depends on the semiconductor material.
Types of Semiconductors Semiconductors can be classified as: Intrinsic
Semiconductor
Extrinsic Semiconductor
Intrinsic Semiconductor An intrinsic type of semiconductor material is made to be
very pure chemically. It is made up of only a single type of element. Germanium
(Ge) and Silicon (Si) are the most common type of intrinsic semiconductor elements.
They have four valence electrons (tetravalent). They are bound to the atom by
covalent bond at absolute zero temperature. When the temperature rises, due to
collisions, few electrons are unbounded and become free to move through the lattice,
thus creating an absence in its original position (hole). These free electrons and holes
contribute to the conduction of electricity in the semiconductor. The negative and
positive charge carriers are equal in number
Applications of Resistors
Resistors are used in Automotive electronics where ECU (Electronic Control Unit)
circuits for accurate signal processing.
They are used in medical devices like ECG and EEG machines where precision
resistors ensure accurate bio-signal measurements.
Resistors, along with capacitors, create time delay effects in various applications like
oscillators and clock circuits for microcontroller timing.
Resistors, when combined with capacitors, form RC filters to eliminate noise and
smooth signals in audio, RF, and communication systems.
Types, features and specification of Capacitors
Capacitors are categorized based on their electrical characteristics and
construction. Understanding these classifications helps in selecting the
right capacitor for specific applications.
o Polarity
Polarized Capacitors: These must be connected with the correct polarity
(positive and negative terminals). Examples include electrolytic and
tantalum
Non-Polarized Capacitors: These can be connected in any direction and
are commonly used in AC circuits. Examples include ceramic, film, and
mica
o Adjustability
Fixed Capacitors: Have a set capacitance value that cannot be changed.
They are the most widely used type in circuits.
Variable Capacitors: Allow manual or electronic adjustment of
capacitance. Used in tuning circuits, such as radios and RF applications.
Includes trimmer and tuning capacitors.
o Dielectric Material
The dielectric is the insulating layer between the plates and determines
the capacitor’s performance:
Ceramic – Compact, used for high-frequency applications
Film – Stable and reliable, used in precision and audio circuits
Electrolytic – High capacitance for power supply smoothing
Tantalum – Compact and stable, ideal for mobile and medical devices
Mica, Paper, Polymer, Glass – Used in specialized or high-performance
applications
Capacitor Specifications
A capacitor’s main job is to store electric charge, and its capacitance value tells
us how much charge it can hold per volt. But there are several other
important things to look at when choosing a capacitor:
Working Voltage: This is the highest voltage a capacitor can handle safely. If
you go over this limit, it might stop working or get damaged.
Tolerance: This tells you how close the actual capacitance is to what’s printed
on the label. For example, a 100 µF capacitor with ±10% tolerance can be
anywhere between 90 µF and 110 µF.
Polarity: Some capacitors (like electrolytic ones) have a positive and negative
side. Connecting them the wrong way can damage them.
Leakage Current: Even when not in use, a small amount of charge can slowly
escape through the material inside the capacitor. This is called leakage.
ESR (Equivalent Series Resistance): This is a small resistance inside the
capacitor that affects how it works at higher frequencies. Lower ESR is
usually better.
Working Temperature: Every capacitor has a temperature range where it
works best. Going outside this range can affect its performance.
Temperature Coefficient: This tells how much the capacitance changes when
the temperature changes.
Volumetric Efficiency: This refers to how much charge a capacitor can store
in a small size. Smaller capacitors with high capacitance are considered more
efficient
Air Core Inductors are used for constructing RF tuning coils. They are also used in
filter circuits, snubber circuits, and high-frequency applications including TV and
radio receivers.
Iron Core Inductor
These Inductors have Ferromagnetic materials, such as ferrite or iron, as the core
material. The usage of such core materials helps in the increase of inductance, due to
their high magnetic permeability. These inductors have high power value but are
limited in high-frequency capacity.
The inductors that have ferromagnetic core materials just like these suffer from core
losses and energy losses at high frequencies.
Ferrite Core Inductor
These types of inductors use ferrite cores. Ferrite is a material with high magnetic
permeability made from the mixture of iron oxide (ferric oxide, Fe2O3) and a small
percentage of other metals such as nickel, zinc, barium, etc.
The ferrite core has very low electrical conductivity which reduces the eddy current
in the core, resulting in very low eddy current loss at high frequency. Hence they can
be used in high-frequency applications. They also offer advantages of decreased cost.
There are two types of ferrites i.e. Hard Ferrites and Soft Ferrites.
The Hard ferrites are also called permanent magnets. These will keep the polarity of
the magnetization even after removing the magnetic field. They are not used in
inductors because of their high hysteresis loss.
The Soft ferrites can reverse the polarity of their magnetization without any
particular amount of energy needed to reverse the magnetic polarity. Their
magnetization changes easily and are good conductors of the magnetic field. Thus
they are used in transformers and inductors.
Laminated Steel Core Inductor
In such types of inductors, the core is laminated which means that it is made up of a
bunch of thin sheets placed on top of each other in a tight form. The sheets are
coated with insulation to increase their electrical resistance and prevent eddy current
flow between them. Therefore the eddy current loss in laminated core inductors
decreases significantly. They are used in high-power applications.
Iron Powder Core Inductor
These are formed from very fine particles with insulated particles of highly pure iron
powder. This type of inductor contains nearly 100% iron only. It gives us a solid-
looking core when this iron power is compressed under very high pressure and
mixed with a binder such as epoxy or phenolic. By this action iron powder forms
like a magnetic solid structure which consists of a distributed air gap.
Due to this air gap, it is capable of storing high magnetic flux when compared with
the ferrite core. This characteristic allows a higher DC level to flow through
the inductor before the inductor saturates. This leads to the reduced permeability of
the core.
Mostly the initial permeability is below 100 only. Thus these inductors possess high-
temperature coefficient stability. These are mainly applicable in switching power
supplies.
Ceramic Core Inductor
Ceramic is a non-magnetic material just like air. Ceramic cores are used to provide a
shape for the coil and a structure for its terminals to sit upon. As it is a non-magnetic
material, it has low magnetic permeability and low inductance. But it provides a
reduction in the core losses. It is mostly available in SMD packaging and is used in
applications where low core losses, High Q, and low inductance are required.
PN Junction Diode
A diode is a device which only allows unidirectional flow of current if operated
within a rated specified voltage level. A diode only blocks current in the reverse
direction while the reverse voltage is within a limited range otherwise reverse
barrier breaks and the voltage at which this breakdown occurs is called reverse
breakdown voltage. The diode acts as a valve in the electronic and electrical circuit.
A P-N junction is the simplest form of the diode which behaves as ideally short
circuit when it is in forward biased and behaves as ideally open circuit when it is in
the reverse biased.
The name diode is derived from "di-ode" which means a device having two
electrodes. A simple PN junction diode by doping donor impurity in one portion
and acceptor impurity in other portion of silicon or germanium crystal block. These
make a p n junction at the middle part of the block beside which one portion is p-
type (doped with trivalent or acceptor impurity), and another portion is n-type
(doped with pentavalent or donor impurity). It can also be formed by joining a p-
type (semiconductor doped with a trivalent impurity) and n-type semiconductor
(intrinsic semiconductor doped with a pentavalent impurity) together with a special
fabrication technique such that a p-n junction is formed. It can also be formed by
joining a p-type (semiconductor doped with a trivalent impurity) and n-type
semiconductor (intrinsic semiconductor doped with a pentavalent impurity)
together with a special fabrication technique such that a p-n junction is formed.
Construction
The p-type forms anode and the n-type forms the cathode. These terminals are
brought out to make the external connections. N-side will have a significant number
of electrons, and very few holes (due to thermal excitation) whereas the p side will
have a high concentration of holes and very few electrons. Due to this, a process
called diffusion takes place. In this process free electrons from n side will diffuse
(spread) into the p side and recombine with holes present there, leaving positive
immobile (not moveable) ions in n side and creating negative immobile ions in p
side of the diode. Hence, there will be uncovered positive donor ions in n-type side
near the junction edge.
Similarly, there will be uncovered negative acceptor ions in p-type side near the
junction edge. Due to this, numbers of positive ions and negative ions will
accumulate on n-side and p-side respectively. This region so formed is called as
depletion region due to the “depletion” of free carriers in the region. Due to the
presence of these positive and negative ions a static electric field called as barrier
potential is created across the pn junction of the diode. It is called as "barrier
potential" because it acts as a barrier and opposes the further migration of holes and
electrons across the junction.
Forward Bias
In a PN junction diode when the forward voltage is applied i.e. positive terminal of
a source is connected to the p-type side, and the negative terminal of the source is
connected to the n-type side, the diode is said to be in forward biased condition.
There is a barrier potential across the junction. This barrier potential is directed in
the opposite of the forward applied voltage. So a diode can only allow current to
flow in the forward direction when forward applied voltage is more than barrier
potential of the junction. This voltage is called forward biased voltage. For silicon
diode, it is 0.7 volts. For germanium diode, it is 0.3 volts.
When forward applied voltage is more than this forward biased voltage, there will
be forward current in the diode, and the diode will become short circuited. Hence,
there will be no more voltage drop across the diode beyond this forward biased
voltage, and forward current is only limited by the external resistance connected in
series with the diode. Thus, if forward applied voltage increases from zero, the diode
will start conducting only after this voltage reaches just above the barrier potential
or forward biased voltage of the junction. The time, taken by this input voltage to
reach that value or in other words, the time, taken by this input voltage to overcome
the forward biased voltage is called recovery time.
Reverse Bias
The diode is reverse biased i.e. positive terminal of the source is connected to the n-
type end, and the negative terminal of the source is connected to the p-type end of
the diode, there will be no current through the diode except reverse saturation
current. This is because at the reverse biased condition the depilation layer of the
junction becomes wider with increasing reverse biased voltage. Although there is a
tiny current flowing from n-type end to p-type end in the diode due to minority
carriers. This tiny current is called reverse saturation current. Minority carriers are
semiconductor respectively
.
Now if reverse applied voltage across the diode is continually increased, then after
certain applied voltage the depletion layer will destroy which will cause a huge
reverse current to flow through the diode. If this current is not externally limited and
it reaches beyond the safe value, the diode may be permanently destroyed. This is
because, as the magnitude of the reverse voltage increases, the kinetic energy of the
minority charge carriers also increases. These fast moving electrons collide with the
other atoms in the device to knock-off some more electrons from them. The electrons
so released further release much more electrons from the atoms by breaking the
covalent bonds. This process is termed as carrier multiplication and leads to a
considerable increase in the flow of current through the p-n junction. The associated
phenomenon is called Avalanche Breakdown.
V- I Characteristics
Forward Bias When, P terminal is more positive as compared to N-terminal i.e. P-
terminal connected to positive terminal of battery and N-terminal connected to
negative terminal of battery, it is said to be forward biased. Positive terminal of the
battery repels majority carriers, holes, in P-region and negative terminal repels
electrons in the N-region and push them towards the junction. This result in increase
in concentration of carriers near junction, recombination takes place and width of
depletion region decreases. As forward bias voltage is raised depletion region
continues to reduce in width, and more and more carriers recombine. This results in
exponential rise of current.
Reverse Bias
In reverse biasing P- terminal is connected to negative terminal of the battery and N-
terminal to positive terminal of battery. Thus applied voltage makes N-side more positive
than P-side. Negative terminal of the battery attracts majority carriers, holes, in P-region and
positive terminal attracts electrons in the N-region and pull them away from the junction.
This result in decrease in concentration of charge carriers near junction and width of
depletion region increases. A small amount of current flow due to minority carriers, called as
reverse bias current or leakage current. As reverse bias voltage is raised depletion region
continues to increase in width and no current flows. It can be concluded that diode acts only
when forward biased. Operation of diode can be summarized in form of I-V diode
characteristics graph. For reverse bias diode,
Where, V = supply voltage ID = diode current IS = reverse saturation current For
forward bias,
Zener Breakdown The zener breakdown occurs in heavily doped p-n junction diodes because
of their narrow depletion region. When reverse biased voltage applied to the diode is
increased, the narrow depletion region generates strong electric field.
When reverse biased voltage applied to the diode reaches close to zener voltage, the electric
field in the depletion region is strong enough to pull electrons from their valence band. The
valence electrons which gains sufficient energy from the strong electric field of depletion
region will breaks bonding with the parent atom. The valance electrons which break bonding
with parent atom will become free electrons. These free electrons carry electric current from
one place to another place. At zener breakdown region, a small increase in voltage will
rapidly increases the electric current.
V-I Characteristics of Zener Diode The first quadrant is the forward biased region. Here the
Zener diode acts like an ordinary diode. When a forward voltage is applied, current flows
through it. But due to higher doping concentration, higher current flows through the Zener
diode. In the third quadrant, When a reverse voltage is applied to a Zener voltage, initially a
small reverse saturation current Io flows across the diode. This current is due to thermally
generated minority carriers. As the reverse voltage is increased, at a certain value of reverse
voltage, and current increases drastically and sharply. This is an indication that the
breakdown has occurred. Known as breakdown voltage or Zener voltage, it is denoted by Vz
The zener breakdown voltage of the zener diode is depends on the amount of doping applied.
If the diode is heavily doped, zener breakdown occurs at low reverse voltages. On the other
hand, if the diode is lightly doped, the zener breakdown occurs at high reverse voltages.
Zener diodes are available with zener voltages in the range of 1.8V to 400V.
Voltage Regulator A voltage regulator is a device that regulates the voltage level. It
essentially steps down the input voltage to the desired level and keeps it at that same level
during the supply. This ensures that even when a load is applied the voltage doesn’t drop. The
voltage regulator is mainly used for two main reasons, and they are: To vary or regulate the
output voltage To keep the output voltage constant at the desired value in spite of
variations in the supply voltage. Voltage regulators are used in computers, power generators,
alternators to control the output of the plant