SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance
P-TO220-3-31
1 2 3
VDS @ Tjmax RDS(on) ID
PG-TO220FP PG-TO262
650 0.6 7.3
PG-TO220
2
V A
23
P-TO220-3-1
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type SPP07N60C3
Package PG-TO220-3
Ordering Code Q67040-S4400
Marking 07N60C3 07N60C3 07N60C3
SPI07N60C3
PG-TO262
Q67040-S4424
SPA07N60C3
PG-TO220FP
SP000216303
Maximum Ratings Parameter Symbol
Value SPP_I SPA
Unit
Continuous drain current
TC = 25 C TC = 100 C
ID
A
7.3 4.6 7.31) 4.61)
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD =50V
ID puls
21.9
21.9
EAS
EAR IAR
230 0.5
230 0.5
mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
7.3
7.3
VGS
20
30
20
30
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25C
VGS Ptot
83
32
Operating and storage temperature Reverse diode dv/dt
Rev. 3.2
6)
T j , Tstg dv/dt
Page 1
-55...+150 15
C V/ns
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
Maximum Ratings Parameter Symbol Value Unit
Drain Source voltage slope
V DS = 480 V, ID = 7.3 A, Tj = 125 C
dv/dt
50
V/ns
Thermal Characteristics Parameter Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA Values typ. max. Unit
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3)
35
1.5 3.9 62 80 62 -
K/W
Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s
Tsold
260
Electrical Characteristics, at T j=25C unless otherwise specified Symbol Conditions Parameter min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=7.3A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS
ID=350A, VGS=VDS VDS=600V, VGS=0V, Tj=25C Tj=150C
Values typ. 700 3 0.5 0.54 1.46 0.8 max. 3.9
Unit V
600 2.1 -
A 1 100 100 0.6 nA
Gate-source leakage current
I GSS
VGS=30V, VDS=0V VGS=10V, ID=4.6A Tj=25C Tj=150C
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
f=1MHz, open drain
Rev. 3.2
Page 2
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Characteristics
Transconductance Input capacitance Output capacitance Reverse transfer capacitance
Symbol
Conditions min.
Values typ. 6 790 260 16 30 55 6 3.5 60 7 max. 100 15
Unit
g fs Ciss Coss Crss
V DS2*I D*RDS(on)max, ID=4.6A V GS=0V, V DS=25V, f=1MHz
S pF
Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related
Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
V GS=0V, V DS=0V to 480V
td(on) tr td(off) tf
V DD=380V, V GS=0/13V, ID=7.3A, RG=12, Tj=125C
ns
VDD=480V, ID=7.3A
3 9.2 21 5.5
27 -
nC
VDD=480V, ID=7.3A, VGS=0 to 10V
V(plateau) VDD=480V, ID=7.3A
1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.
6I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch.
Rev. 3.2
Page 3
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current
Typical Transient Thermal Characteristics Symbol SPP_I Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.024 0.046 0.085 0.308 0.317 0.112
Tj
Symbol IS ISM VSD trr Qrr Irrm dirr /dt
Conditions min.
TC=25C
Values typ. 1 400 4 28 800 max. 7.3 21.9 1.2 600 -
Unit A
VGS=0V, IF=IS VR=480V, IF=IS , diF/dt=100A/s
V ns C A A/s
Tj=25C
Value SPA 0.024 0.046 0.085 0.195 0.45 2.511
R th1
Unit K/W
Symbol SPP_I Cth1 Cth2 Cth3 Cth4 Cth5 Cth6
R th,n
T case
Value SPA 0.00012 0.0004578 0.000645 0.001867 0.007558 0.412 0.00012 0.0004578 0.000645 0.001867 0.004795 0.045
Unit Ws/K
E xternal H eatsink
P tot (t) C th1 C th2 C th,n
T am b
Rev. 3.2
Page 4
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
1 Power dissipation Ptot = f (TC)
100
SPP07N60C3
2 Power dissipation FullPAK Ptot = f (TC)
34
W
W
80 70
28 24
Ptot
60 50 40
Ptot
C
20 16 12
30 20 10 0 0 8 4 0 0
20
40
60
80
100
120
160
20
40
60
80
100
120
160
TC
TC
3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC =25C
10
2
4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C
10 2
10 1
10 1
ID
10 0
ID
10 0
10 -1
tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
10 -1
tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC
1 2 3
10 -2 0 10
10
10
V VDS
10
10 -2 0 10
10
10
10 V VDS
Rev. 3.2
Page 5
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
5 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T
10
1
6 Transient thermal impedance FullPAK ZthJC = f (t p) parameter: D = tp/t
10 1
K/W
K/W
10 0
10 0
ZthJC
10 -1
ZthJC
D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
10 -1
10 -2
10 -2
D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
10 -3 -7 10
10
-6
10
-5
10
-4
10
-3
s tp
10
-1
10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10
1 s 10
tp
7 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS
24
8 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS
13
20V 10V 8V
A
7V
11 10
20V 8V 6.5V
6V
ID
ID
16
6,5V
9 8 7
5.5V
12
6V
6 5
5V
5,5V
4 3
4.5V 4V
5V 4,5V
2 1 25 0 0 2 4 6 8
0 0
10
15
VDS
10 12 14 16 18 20 22 V 25
VDS
Rev. 3.2
Page 6
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS
10
10 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 4.6 A, VGS = 10 V
3.4
SPP07N60C3
4V 4.5V
2.8
RDS(on)
5.5V
RDS(on)
7 6 5 4 3 2 1 0 0
5V
2.4 2 1.6 1.2 0.8 0.4 0 -60 98% typ
6V 6.5V 8V 20V
10
12
A 15 ID
-20
20
60
100
180
Tj
11 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s
24
12 Typ. gate charge
VGS = f (Q Gate) parameter: ID = 7.3 A pulsed
16
SPP07N60C3
A
V
20 18
25C
12
VGS
ID
16 14 12 10
150C
10
0,2 VDS max
0,8 VDS max
6 8 6 4 2 2 0 0 2 4 6 8 10 12 14 16 4
V 20 VGS
0 0
12
16
20
24
28 nC
34
Q Gate
Rev. 3.2
Page 7
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s
10
2 SPP07N60C3
14 Typ. switching time t = f (ID), inductive load, T j=125C par.: V DS=380V, VGS=0/+13V, R G=12
90
ns
td(off)
70 10 1 60
IF
t
50 40 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 10 0 0 20 30
tf td(on) tr
VSD
A ID
15 Typ. switching time t = f (RG), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, ID=7.3 A
500
16 Typ. drain current slope
di/dt = f(R G), inductive load, Tj = 125C
par.: V DS=380V, VGS=0/+13V, ID=7.3A
3000
ns A/s
400 350 300 250 200 150 100 50 0 0 0 0 1000
td(off)
di/dt
2000
1500
di/dt(on)
td(on) tf tr
500
di/dt(off)
20
40
60
80
100
130 RG
20
40
60
80
100
130 RG
Rev. 3.2
Page 8
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
17 Typ. drain source voltage slope 18 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: V DS=380V, VGS=0/+13V, R G=12
0.025
*) E on includes SDP06S60 diode commutation losses.
dv/dt = f(RG), inductive load, Tj = 125C
par.: VDS=380V, VGS=0/+13V, ID=7.3A
100
V/ns
80 70 60 50 40 30 20 10 0 0
dv/dt(off) dv/dt(on)
mWs
dv/dt
0.015
0.01
Eoff
0.005
Eon*
20
40
60
80
RG
120
0 0
A ID
19 Typ. switching losses E = f(RG), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, ID=7.3A
0.2
20 Avalanche SOA IAR = f (tAR) par.: Tj 150 C
8
mWs
0.16
*) Eon includes SDP06S60 diode commutation losses.
A
Tj(START)=25C
6 0.14
IAR
0.12 0.1
Eoff
Tj(START)=125C
0.08 0.06 0.04 0.02 0 0
3
Eon*
20
40
60
80
100
130 RG
0 -3 10
10
-2
10
-1
10
10
10
s 10 t AR
Rev. 3.2
Page 9
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
21 Avalanche energy EAS = f (Tj) par.: ID = 5.5 A, V DD = 50 V
260
22 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
720
SPP07N60C3
mJ
220
EAS
180 160 140 120 100 80 60 40 20 0 20 40 60 80 100 120
V(BR)DSS
C
200
680 660 640 620 600 580 560 540 -60
160
-20
20
60
100
180
Tj
Tj
23 Avalanche power losses PAR = f (f ) parameter: E AR=0.5mJ
500
24 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz
10 4
pF W
10
3
Ciss
PAR
300
C
10 2
200
Coss
10 1 100
Crss
0 4 10
10
MHz f
10
10 0 0
100
200
300
400
600
VDS
Rev. 3.2
Page 10
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
25 Typ. Coss stored energy Eoss=f(VDS)
5.5
J
4.5 4
Eoss
3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400
600
VDS
Definition of diodes switching characteristics
Rev. 3.2
Page 11
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
PG-TO220-3-1, PG-TO220-3-21 : Outline
Rev. 3.2
Page 12
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
PG-TO220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)
Rev. 3.2
Page 13
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
PG-TO-262-3-1/PG-TO262-3-21 (I-PAK)
Rev. 3.2
Page 14
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C
Rev. 3.2
Page 15
2009-11-27
