PD - 97617

IRL6342PbF
VDS VGS RDS(on) max
(@VGS = 4.5V)

30 12 14.6 11 9.9

V V m nC A
6 6 6 *    

HEXFET Power MOSFET

    ' ' ' '

Qg (typical) ID
(@TA = 25C)

SO-8

Applications

Battery operated DC motor inverter MOSFET System/Load Switch

Features and Benefits
Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Resulting Benefits Multi-Vendor Compatibility Environmentally Friendlier Increased Reliability

Orderable part number IRL6342PBF IRL6342TRPBF

Package Type SO-8 SO-8

Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel

Note

Absolute Maximum Ratings

Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Power Dissipation Pulsed Drain Current

Max.
30 12 9.9 7.9 79 2.5 1.6 0.02 -55 to + 150

Units
V

e Power Dissipation e

W W/C C

Linear Derating Factor Operating Junction and Storage Temperature Range

Notes through are on page 2

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1
01/03/11

IRL6342PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

Min.
30 0.5 38

Typ.
22 12.0 15.0 -4.2 11 0.01 0.60 4.6 5.79 5.2 2.0 6.0 12 33 14 1025 97 70

Max.
14.6 19.0 1.1 1.0 150 100 -100

Units

Conditions

VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA VGS = 4.5V, ID = 9.9A m VGS = 2.5V, ID = 7.9A

d d

V mV/C A nA S

VDS = VGS, ID = 10A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V VDS = 10V, ID = 7.9A VGS = 4.5V VDS = 15V ID = 7.9A

nC

ns VDD = 15V, VGS = 4.5V ID = 7.9A RG = 6.8 See Figs. 18 VGS = 0V pF VDS = 25V = 1.0MHz

Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)

Min.

Typ.
13 5.2

Max.
2.5

Units
A

Conditions
MOSFET symbol showing the integral reverse p-n junction diode.
G S D

79 1.2 20 7.8 Typ. V ns nC

Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

TJ = 25C, IS = 9.9A, VGS = 0V TJ = 25C, IF = 7.9A, VDD = 24V di/dt = 100/s

Thermal Resistance
RJL RJA Junction-to-Drain Lead f Junction-to-Ambient e

Parameter

Max. 20 50

Units
C/W

Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. When mounted on 1 ich square copper board. R is measured at T J of approximately 90C.

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IRL6342PbF
100
TOP VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V

100
TOP VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V

ID, Drain-to-Source Current (A)

10
BOTTOM

ID, Drain-to-Source Current (A)

10
BOTTOM

60s PULSE WIDTH

0.1 1.3V 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Tj = 25C

1.3V

60s PULSE WIDTH

Tj = 150C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

Fig 2. Typical Output Characteristics

2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)

ID = 9.9A 1.8 1.6 1.4 1.2 1.0 0.8 0.6

ID, Drain-to-Source Current (A)

VGS = 4.5V

10

T J = 150C

T J = 25C

0.1 1.0 1.5

VDS = 10V 60s PULSE WIDTH 2.0 2.5 3.0

-60 -40 -20 0

20 40 60 80 100 120 140 160

VGS, Gate-to-Source Voltage (V)

T J , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics

10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C oss = C ds + C gd

Fig 4. Normalized On-Resistance vs. Temperature

14.0 ID= 7.9A
VGS, Gate-to-Source Voltage (V)

C rss = C gd

12.0 10.0 8.0 6.0 4.0 2.0 0.0

VDS= 24V VDS= 15V

C, Capacitance (pF)

1000

Ciss Coss

VDS= 6.0V

100

Crss

10 1 10 VDS, Drain-to-Source Voltage (V) 100

10

15

20

25

30

QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRL6342PbF
100

1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec

TJ = 150C T J = 25C

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

100 1msec 10 DC 1 T A = 25C 0.1 Tj = 150C Single Pulse 0.1 1.0 10 100 10msec

10

VGS = 0V 1.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-to-Drain Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

10
VGS(th) , Gate threshold Voltage (V)

Fig 8. Maximum Safe Operating Area

1.4 1.2 1.0 0.8 0.6 0.4 0.2 ID = 10A ID = 250A ID = 1.0mA

8
ID, Drain Current (A)

0 25 50 75 100 125 150 T C , Case Temperature (C)

-75 -50 -25

25

50

75 100 125 150

T J , Temperature ( C )

Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature

100
Thermal Response ( Z thJA ) C/W

Fig 10. Threshold Voltage vs. Temperature

D = 0.50 10 0.20 0.10 0.05 0.02 0.01

0.1

0.01

SINGLE PULSE ( THERMAL RESPONSE )

Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001 0.01 0.1 1 10 100

0.001 1E-006

1E-005

0.0001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

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IRL6342PbF
RDS(on), Drain-to -Source On Resistance (m )
ID = 9.9A 35 30 25 20 15 10 5 1 2 3 4 5 6 7 8 9 10 11 12 T J = 125C
RDS(on), Drain-to -Source On Resistance ( m)

40

40 35 30 Vgs = 2.5V 25 20 15 10 0 10 20 30 40 50 60 70 80 ID, Drain Current (A)

Vgs = 4.5V

T J = 25C

Fig 12. On-Resistance vs. Gate Voltage

250
EAS , Single Pulse Avalanche Energy (mJ)

VGS, Gate -to -Source Voltage (V)

Fig 13. Typical On-Resistance vs. Drain Current

30000

200

ID TOP 1.3A 1.9A BOTTOM 7.9A

25000 20000
Power (W)

150

15000 10000

100

50

5000 0 1E-8

0 25 50 75 100 125 150 Starting T J , Junction Temperature (C)

1E-7

1E-6

1E-5

1E-4

1E-3

Time (sec)

Fig 14. Maximum Avalanche Energy vs. Drain Current

Fig 15. Typical Power vs. Time

Driver Gate Drive

D.U.T

P.W.

Period

D=

P.W. Period VGS=10V

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

RG
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test

V DD

VDD

+ -

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs

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IRL6342PbF
Vds Vgs Id

L
0

DUT 1K
S

VCC
Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 17a. Gate Charge Test Circuit

Fig 17b. Gate Charge Waveform

V(BR)DSS
15V

tp
DRIVER

VDS

RG
20V

D.U.T
IAS tp

+ V - DD

0.01

I AS

Fig 18a. Unclamped Inductive Test Circuit

Fig 18b. Unclamped Inductive Waveforms

V DS V GS RG 10V V GS
Pulse Width 1 s Duty Factor 0.1

RD

90%
D.U.T.
+

VDS

-V DD

10%

VGS
td(on) tr td(off) tf

Fig 19a. Switching Time Test Circuit

Fig 19b. Switching Time Waveforms

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IRL6342PbF
SO-8 Package Outline (Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
' $          %
',0 ,1&+(6 0,1 0$; $   $    E  F    '  (   %$6,& H H  %$6,& +   .    /    \ 0,//,0(7(56 0,1 0$;             %$6,& %$6,&        

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+ >@

; H

H

.[ & >@ \ ;/  ;F

;E >@

$ & $ %

127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7(

)22735,17 ;>@

>@

;>@

;>@

SO-8 Part Marking Information

(;$03/(7+,6,6$1,5)026)(7

,17(51$7,21$/ 5(&7,),(5 /2*2

;;;; )

'$7(&2'(<:: 3 ',6*1$7(6/($')5(( 352'8&7237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRL6342PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1

12.3 ( .484 ) 11.7 ( .461 )

8.1 ( .318 ) 7.9 ( .312 )

FEED DIRECTION

NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F SO-8

guidelines ) MS L1

(per JE DE C J-S T D-020D Yes

Qualification standards can be found at International Rectifiers web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2011

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