2N3442

HighPower Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.

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Features

Collector Emitter Sustaining Voltage VCEO(sus) = 140 Vdc (Min)

Excellent Second Breakdown Capability
PbFree Package is Available*

10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS 117 WATTS

MAXIMUM RATINGS (Note 1)

Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCEO

140

Vdc

CollectorBase Voltage

VCB

160

Vdc

EmitterBase Voltage

VEB

7.0

Vdc

Collector Current

Continuous
Peak

IC

10
15

Adc

Base Current

Continuous
Peak

IB

7.0

Adc

PD

117
0.67

W
W/_C

TJ, Tstg

65 to +200

_C

Characteristics

Symbol

Max

Unit

Thermal Resistance, JunctiontoCase

RqJC

1.17

_C/W

Total Device Dissipation @ TC = 25_C

Derate above 25_C (Note 2)
Operating and Storage Junction
Temperature Range

TO204AA (TO3)
CASE 107
STYLE 1

MARKING DIAGRAM

THERMAL CHARACTERISTICS

2N3442G
AYWW
MEX

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Indicates JEDEC Registered Data.
2. This data guaranteed in addition to JEDEC registered data.
2N3442
G
A
Y
WW
MEX

= Device Code
= PbFree Package
= Assembly Location
= Year
= Work Week
= Country of Origin

ORDERING INFORMATION
Device
2N3442
2N3442G

Package

Shipping

TO204

100 Units / Tray

TO204
(PbFree)

100 Units / Tray

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006

February, 2006 Rev. 11

Publication Order Number:

2N3442/D

PD /PD(MAX), POWER DISSIPATION (NORMALIZED)

25

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Figure 1. Power Derating
50
75
100
125
150
TC, CASE TEMPERATURE (C)

175

200

0.2
0.4
0.6
0.8
1.0

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

4. fT = |hfe| ftest
CollectorEmitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)

VCE(sat)

5.0

Vdc

BaseEmitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)

VBE(on)

5.7

Vdc

CurrentGain Bandwidth Product (Note 4)

(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)

fT

80

kHz

SmallSignal Current Gain

(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

hfe

12

72

DYNAMIC CHARACTERISTICS

DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)

Symbol

Min

Max

Unit

VCEO(sus)

140

Vdc

Collector Cutoff Current

(VCE = 140 Vdc, IB = 0)

ICEO

200

mAdc

Collector Cutoff Current

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEX

5.0
30

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

IEBO

5.0

20
7.5

70

hFE

ON CHARACTERISTICS (Note 3)

CollectorEmitter Sustaining Voltage

(IC = 200 mAdc, IB = 0)

mAdc
mAdc

OFF CHARACTERISTICS

Characteristic

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

2N3442

2N3442
ACTIVE REGION SAFE OPERATING AREA INFORMATION
20
IC, COLLECTOR CURRENT (AMP)

10 ms

There are two limitations on the powerhandling

ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
IC VCE limits of the transistor that must be observed
for reliable operation, i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200_C; TC
is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown.

10
dc

7.0
5.0

30 ms

3.0

50 ms

2.0
1.0

100 ms

TJ = 200C

0.3
0.2
2.0 3.0

1.0 ms

CURRENT LIMIT
THERMAL LIMIT @ TC = 25C
SINGLE PULSE
SECOND BREAKDOWN LIMIT

0.7
0.5

100 ms

50 70 100
5.0 7.0 10
20 30
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

200

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 2. 2N3442

400
TJ = 150C
hFE , DC CURRENT GAIN

200
100
25C

60

VCE = 4.0 V

55 C

40
20
10
6.0
4.0
0.1

0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

5.0 7.0 10

1.4
1.2

IC = 1.0 A

2.0 A

4.0 A

8.0 A

1.0
0.8
0.6
0.4
0.2
TJ = 25C
0
2.0

Figure 3. DC Current Gain

5.0

10

20
50
100 200
IB, BASE CURRENT (mA)

500

1.0 k 2.0 k

Figure 4. CollectorSaturation Region

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3

2N3442
PACKAGE DIMENSIONS

TO204 (TO3)
CASE 107
ISSUE Z

A
N
C
T
E
D

SEATING
PLANE

2 PL

0.13 (0.005)
U

T Q

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.

T Y

Q
0.13 (0.005)

INCHES
MIN
MAX
1.550 REF
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
0.830
0.151
0.165
1.187 BSC
0.131
0.188

MILLIMETERS
MIN
MAX
39.37 REF
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
21.08
3.84
4.19
30.15 BSC
3.33
4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N3442/D

Mouser Electronics
Authorized Distributor

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2N3442G