INTEGRATED CIRCUITS

DATA SHEET

TDA1562Q
70 W high efficiency power
amplifier with diagnostic facility
Preliminary specification
File under Integrated Circuits, IC01

1998 Apr 07

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

FEATURES

Fast mute on supply voltage drops

Very high output power, operating from a single low

supply voltage

Quick start option (e.g. car-telephony/navigation)

Low power dissipation, when used for music signals

Load dump protection

Switches to low output power at too high case

temperatures

Short-circuit safe to ground, supply voltage and across

the load

Few external components

Low power dissipation in any short-circuit condition

Fixed gain

Protected against electrostatic discharge

Differential inputs with high common mode rejection

Thermally protected

Mode select pin (on, mute and standby)

Flexible leads.

Low (delta) offset voltage at the outputs

Status I/O pin (class-H, class-B and fast mute)

All switching levels with hysteresis

GENERAL DESCRIPTION

Diagnostic pin with information about:

The TDA1562Q is a monolithic integrated 70 W/4

Bridge-Tied Load (BTL) class-H high efficiency power
amplifier in a 17-lead DIL-bent-SIL plastic power
package.

Dynamic Distortion Detector (DDD)

Any short-circuit at outputs
Open load detector

The device can be used for car audio systems (e.g. car,
radio and boosters) as well as mains fed applications (e.g.
midi/mini audio combinations and TV sound).

Temperature protection.
No switch-on or switch-off plops

QUICK REFERENCE DATA

Test conditions: VP = 14.4 V; RL = 4 ; Rs = 0 ; f = 1 kHz; Tamb = 25 C; unless otherwise specified.
SYMBOL
VP

PARAMETER
supply voltage

CONDITIONS

MIN.

TYP.

MAX.

UNIT

operating

14.4

18

non-operating

30

load dump

45

Iq(tot)

total quiescent current

on and mute;
RL = open circuit

110

150

mA

Istb

standby current

standby

50

VOO

output offset voltage

on and mute

100

mV

on mute

VOO

delta output offset voltage

30

mV

Gv

voltage gain

25

26

27

dB

Zi(dif)

differential input impedance

90

150

Po

output power

45

55

THD

total harmonic distortion

THD = 0.5%
THD = 10%

60

70

Po = 1 W

0.03

Po = 20 W

0.06

DDD active

10

SVRR

supply voltage ripple rejection

on and mute

60

70

dB

CMRR

common mode rejection ratio

on

70

80

dB

ISRR

input signal rejection ratio

mute

80

90

dB

Vn(o)

noise output voltage

on

100

150

1998 Apr 07

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
TDA1562Q

DESCRIPTION

DBS17P

VERSION

plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

SOT243-1

BLOCK DIAGRAM

C1

handbook, full pagewidth

status I/O

mode
select

16

CLASS-B
CLASS-H
FAST MUTE

C1+
5

VP2
10

LOAD DUMP
PROTECTION

TEMPERATURE
SENSOR

disable

STANDBY
MUTE
ON

VP1

LIFT-SUPPLY

CURRENT
PROTECTION

VP*
IN+

+
PREAMP

75
k

75
k

Vref

PREAMP
+

TDA1562Q

LOAD
DETECTOR

DYNAMIC
DISTORTION
DETECTOR

11

POWERSTAGE

diagnostic

OUT

VP*

14
15 k

signal 17
GND

OUT+

DIAGNOSTIC
INTERFACE
FEEDBACK
CIRCUIT

IN

POWERSTAGE

disable

LIFT-SUPPLY

TEMPERATURE
PROTECTION

15
C2

6
PGND1

reference
voltage

MGL264

13
C2+

Fig.1 Block diagram.

1998 Apr 07

12
PGND2

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

PINNING
SYMBOL

PIN

DESCRIPTION

IN+

signal input (positive)

IN

signal input (negative)

C1

negative terminal of lift electrolytic

capacitor 1

MODE

mode select input

C1+

positive terminal of lift electrolytic

capacitor 1

PGND1

power ground 1

OUT+

positive output

DIAG

diagnostic output (open collector)

VP1

supply voltage 1

VP2

10

supply voltage 2

VP1 9

OUT

11

negative output

VP2 10

PGND2

12

power ground 2

OUT 11

C2+

13

positive terminal of lift electrolytic

capacitor 2

Vref

14

internal reference voltage

C2

15

negative terminal of lift electrolytic

capacitor 2

STAT

16

status I/O

SGND

17

signal ground

handbook, halfpage

IN+ 1
IN 2
C1 3
MODE 4
C1+ 5
PGND1 6
OUT+ 7
DIAG 8

TDA1562Q

PGND2 12
C2+ 13
Vref 14
C2 15
STAT 16
SGND 17
MGL263

Fig.2 Pin configuration.

1998 Apr 07

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

FUNCTIONAL DESCRIPTION

Status I/O input (pin STAT)

The TDA1562Q contains a mono class-H BTL output

power amplifier. At low output power, up to 18 W, the
device operates as a normal BTL amplifier. When a larger
output voltage swing is required, the internal supply
voltage is lifted by means of the external electrolytic
capacitors. Due to this momentarily higher supply voltage
the obtainable output power is 70 W.

INPUT
This input has 3 possibilities:
1. LOW, fast mute: the circuit remains switched on, but
the input signal is suppressed
2. MID, class-B: the circuit operates as class-B
amplifier, the high power supply voltage is disabled,
independent of the case temperature

In normal use, when the output is driven with music-like

signals, the high output power is only needed during a
small percentage of time. Under the assumption that a
music signal has a normal (Gaussian) amplitude
distribution, the reduction in dissipation is about 50% when
compared to a class-B output amplifier with the same
output power. The heatsink should be designed for use
with music signals. If the case temperature exceeds
120 C, the device will switch back from class-H to class-B
operation. The high power supply voltage is then disabled
and the output power is limited to 20 W.

3. HIGH, class-H: the circuit operates as class-H

amplifier, the high power supply voltage is enabled,
independent of the case temperature.
When the circuit is switched from fast mute to class-B/H or
vice versa the switching is immediately carried out. When
the circuit is switched from class-B to class-H or vice versa
the actual switching takes place at a zero crossing of the
input signal.
OUTPUT

When the supply voltage drops below the minimum

operating level, the amplifier will be muted immediately.

This output has 3 possibilities:

1. LOW, mute: acknowledge of muted amplifier

Mode select input (pin MODE)

2. MID, class-B: the circuit operates as class-B

amplifier, the high power supply voltage is disabled,
caused by the case temperature Tc > 120 C

This pin has 3 modes:

1. LOW, standby: the complete circuit is switched off,
the supply current is very low

3. HIGH, class-H: the circuit operates as class-H

amplifier, the high power supply voltage is enabled,
because the case temperature Tc < 120 C.

2. MID, mute: the circuit is switched on, but the input

signal is suppressed

When the circuit is switched from class-B to class-H or vice

versa the actual switching takes place at a zero crossing
of the input signal.

3. HIGH, on: normal operation, the input signal is

amplified by 26 dB.
When the circuit is switched from mute to on or vice versa
the actual switching takes place at a zero crossing of the
input signal. The circuit contains a quick start option, i.e.
when it is switched directly from standby to on,
the amplifier is fully operational within 50 ms (important for
applications like car telephony and car navigation).

1998 Apr 07

The status I/O pins of maximum 8 devices may be tied

together for synchronizing purposes.

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

handbook, full pagewidth

supply
voltage

TDA1562Q

on
mute
0
HIGH

mode select
input

MID
LOW
Vref

reference
voltage

VRT
0
HIGH

status I/O
input

MID
LOW
HIGH

status I/O
output

class-H (Tc < 120 C)

MID

class-B (Tc > 120 C)

LOW

output voltage
across load

quick start
mute

zerocross change
class B/H-operation

fast mute
function

zerocross mute
function

supply mute
function
MGL272

Fig.3 Switching characteristics.

1998 Apr 07

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

Diagnostic output (pin DIAG)

TEMPERATURE DETECTION

DYNAMIC DISTORTION DETECTOR (DDD)

Just before the temperature protection becomes active the

diagnostic output becomes continuously LOW.

At the onset of clipping of the output stages, the DDD

becomes active. This information can be used to drive a
sound processor or DC-volume control to attenuate the
input signal and so limit the distortion.

Load detection: directly after the circuit is switched from

standby to mute or on, a build in detection circuit checks
whether a load is present. The results of this check can be
detected at the diagnostic output, by switching the mode
select input in the mute mode.

SHORT-CIRCUIT PROTECTION

Since the diagnostic output is an open collector output,

more devices can be tied together.

When a short-circuit occurs at the outputs to ground or to

the supply voltage, the output stages are switched off.
They will be switched on again approximately 20 ms after
removing the short-circuit. During this short-circuit
condition the diagnostic output is continuously LOW.
When a short-circuit occurs across the load, the output
stages are switched off during approximately 20 ms. After
that time is checked during approximately 50 s whether
the short-circuit is still present. During this short-circuit
condition the diagnostic output is LOW for 20 ms and high
for 50 s. The power dissipation in any short-circuit
condition is very low.

HIGH
handbook, full pagewidth

mode select
input

MID

LOW

output voltage
across load

HIGH

diagnostic
output
no load
LOW
t
short-circuit to
supply or ground

clipping signal

Fig.4 Diagnostic information.

1998 Apr 07

short-circuit
across load

MGL265

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

status I/O: high

class-H

handbook, full pagewidth

maximum output
voltage swing

status I/O: open

class-B

0
HIGH

diagnostic
output

LOW

HIGH

status I/O
output

MID

LOW
100

120

145

150

160
Tj (C)

MGL266

Fig.5 Behaviour as a function of temperature.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VP

IOSM

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

operating

18

non-operating

30

load dump; tr > 2.5 ms;

T = 50 ms

45

non-repetitive peak output current

10

repetitive peak output current

supply voltage

Vsc

short-circuit safe voltage

18

Tstg

storage temperature

55

+150

Tamb

ambient temperature

40

Tj

junction temperature

150

Ptot

total power dissipation

60

note 1

Note
1. Tj is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device.
Tj = Tc + P Rth(j-c), where Rth(j-c) is a fixed value to be used for the calculation of Tj. The rating for Tj limits the
allowable combinations of power dissipation P and case temperature Tc (in accordance with IEC 747-1).

1998 Apr 07

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

CONDITIONS

Rth(j-c)

thermal resistance from junction to case

Rth(j-a)

thermal resistance from junction to ambient

VALUE

in free air

UNIT

1.5

K/W

40

K/W

DC CHARACTERISTICS
VP = 14.4 V; RL = 4 ; Tamb = 25 C; measurements in accordance with Fig.10; unless otherwise specified.
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supplies VP1 and VP2 (pins 9 and 10)

VP

supply voltage

Vth+

supply threshold voltage

mute on

Vth

supply threshold voltage

on mute

VPH1

hysteresis (Vth+ Vth)

Iq

quiescent current

on and mute;
RL = open circuit

Istb

standby current

14.4

18

200

mV

110

150

mA

standby

50

Amplifier outputs OUT+ and OUT (pins 7 and 11)

VO

DC output voltage

on and mute

6.5

VOO

output offset voltage

on and mute

100

mV

VOO

delta output offset voltage

on mute

30

mV

Vp

Mode select input MODE (pin 4)

VI

input voltage range

II

input current

VMODE = 14.4 V

20

Vth1+

threshold voltage

standby mute

Vth1

threshold voltage

mute standby

VmsH1

hysteresis (Vth1+ Vth1)

200

mV

Vth2+

threshold voltage

mute on

4.2

Vth2

threshold voltage

on mute

3.3

VmsH2

hysteresis (Vth2+ Vth2)

200

mV

VP

Status I/O STAT (pin 16)

PIN STAT AS INPUT
Vst

input voltage

IstH

HIGH-level input current

VSTAT = 14.4 V

mA

IstL

LOW-level input current

VSTAT = 0 V

400

Vth1+

threshold voltage

fast mute class B

Vth1

threshold voltage

class B fast mute

VstH1

hysteresis (Vth1+ Vth1)

200

mV

Vth2+

threshold voltage

class B class H

4.2

Vth2

threshold voltage

class H class B

3.3

VstH2

hysteresis (Vth2+ Vth1)

200

mV

1998 Apr 07

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility
SYMBOL

TDA1562Q

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

PIN STAT AS OUTPUT

Ist(mute)

mute acknowledge sink current

Vst(mute)

mute acknowledge output voltage

Ist(clB)

class B operation output current

Vst(clB)

class B operation output voltage

Ist(clH)

class H operation source current

Vst(clH)

class H operation output voltage

Tc(th)

threshold case temperature sensor

Ist = 2.2 mA
IIst = 15 AI
Ist = 140 A

2.2

mA

0.5

15

2.0

3.0

140

VP 2.5

120

0.6

Diagnostic output DIAG (pin 8)

VDIAG

output voltage

RL

load resistance for open load

detection

100

Tj(th)

threshold junction temperature

sensor

145

1998 Apr 07

active LOW

10

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

handbook, full pagewidth

TDA1562Q

on-mode

fast mute
VPH1
Vth

VP
Vth+

MGL267

Fig.6 Supply voltage transfer characteristic.

handbook, full pagewidth

on-mode

mute

standby
VmsH2

VmsH1
Vth1

Vth2

Vth1+

Vms

Vth2+
MGL268

Fig.7 Mode select transfer characteristic.

handbook, full pagewidth

class-H

class-B

fast mute
VstH1
Vth1

VstH2
Vth2

Vth1+

Vst

Vth2+
MGL269

Fig.8 Status I/O transfer characteristic.

1998 Apr 07

11

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

AC CHARACTERISTICS
VP = 14.4; RL = 4 ; Rs = 0 ; f = 1 kHz; Tamb = 25 C; measurements in accordance with Fig.10; unless otherwise
specified.
SYMBOL
Po

PARAMETER
output power

CONDITIONS

MIN.

TYP.

MAX.

UNIT

class-B; THD = 10%

16

20

class-H; THD = 10%

60

70

class-H; THD = 0.5%

45

55

fro(h)(P)

high frequency power

roll-off

Po (1 dB); THD = 0.5%;

note 1

20

kHz

THD

total harmonic distortion

Po = 1 W

0.03

Po = 20 W

0.06

DDD active

10

25

26

27

dB

20

kHz

90

150

60

70

dB

90

dB

Gv

voltage gain

fro(h)(G)

high frequency gain

roll-off

Zi(dif)

differential input
impedance

SVRR

supply voltage ripple

rejection

Gv (1 dB); note 2

on and mute; note 3

standby; note 3

CMRR

common mode rejection

ratio

on; note 4

70

80

dB

ISRR

input signal rejection

ratio

mute; note 5

80

90

dB

Vn(o)

noise output voltage

on; note 6

100

150

mute; notes 6 and 7

60

Notes
1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors.
2. The low frequency gain roll-off is determined by the value of the input coupling capacitors.
3. Supply voltage ripple rejection is measured across RL; Vripple = Vripple max. = 2 VPP.
4. Common mode rejection ratio is measured across RL; Vcm = Vcm max. = 2 VPP. CMMR [dB] = differential gain
(Gv) + common mode attenuation (Ac), (Test setup according Fig. 9; mismatch of input coupling capacitors
excluded).
5. Input signal rejection ratio is measured across RL; Vi = Vi(max) = 2 VPP. ISSR [dB] = different gain (Gv) + mute
attenuation (Am)
6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz.
7. Noise output voltage is independent of source impedance Rs.

1998 Apr 07

12

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

+ VP

handbook, full pagewidth

9
Ci

Ci
VCM

10
supply
7

RL

TDA1562
11

2
14
SGND
17

PGND1 PGND2
6

12
GND
MGL270

Fig.9 CMRR test setup.

QUALITY SPECIFICATION
Quality in accordance with SNW-FQ-611 part E, if this type is used as an audio amplifier.

1998 Apr 07

13

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mode
select

100 nF

16

CLASS-B
CLASS-H
FAST MUTE

1/2*Rs

LIFT-SUPPLY

75
k

CURRENT
PROTECTION

AMP.

75
k

IN

AMP.

TDA1562Q

LOAD
DETECTOR

+ VP

10
k

DYNAMIC
DISTORTION
DETECTOR

RL =
4

diagnostic
11
OUT

VP*

14
Vref
15 k
17

OUT+

POWERSTAGE

disable

LIFT-SUPPLY

TEMPERATURE
PROTECTION

reference
voltage

signal GND
13
C2+

Fig.10 Test and application circuit.

12
PGND2
GND
MGL271

TDA1562Q

4700 F

6
PGND1

Preliminary specification

15
C2
handbook, full pagewidth

14

FEEDBACK
CIRCUIT

1/2*Rs

POWERSTAGE
DIAGNOSTIC
INTERFACE

audio
source

10 F

disable

VP*
1
IN+

100 nF

LOAD DUMP
PROTECTION

TEMPERATURE
SENSOR

STANDBY
MUTE
ON

VP1

Philips Semiconductors

status I/O

70 W high efficiency power amplifier

with diagnostic facility

C1+
3

+ VP

TEST AND APPLICATION INFORMATION

1998 Apr 07
C1

2200
F

100
nF
VP2
10

4700 F

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

SOT243-1

non-concave
Dh

Eh

view B: mounting base side

A2

B
j

E
A

L3

Q
c

v M

17
e1

bp

e2

w M

10 mm

scale
DIMENSIONS (mm are the original dimensions)
UNIT

A2

bp

D (1)

Dh

E (1)

mm

17.0
15.5

4.6
4.2

0.75
0.60

0.48
0.38

24.0
23.6

20.0
19.6

10

12.2
11.8

2.54

e1

e2

1.27 5.08

Eh

L3

Z (1)

3.4
3.1

12.4
11.0

2.4
1.6

4.3

2.1
1.8

0.8

0.4

0.03

2.00
1.45

Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION

REFERENCES
IEC

JEDEC

EIAJ

ISSUE DATE
95-03-11
97-12-16

SOT243-1

1998 Apr 07

EUROPEAN
PROJECTION

15

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 C, contact may be up to 5 seconds.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in
our IC Package Databook (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Apr 07

16

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

NOTES

1998 Apr 07

17

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

NOTES

1998 Apr 07

18

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier

with diagnostic facility

TDA1562Q

NOTES

1998 Apr 07

19

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Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstrae 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777

For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Internet: http://www.semiconductors.philips.com

Philips Electronics N.V. 1998

SCA59

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Printed in The Netherlands

545102/1200/01/pp20

Date of release: 1998 Apr 07

Document order number:

9397 750 03043