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HW 4

This document contains homework assignments for a microelectronic devices and circuits class. It includes 3 problems covering various topics: 1. A diode problem involving calculating current, capacitance, and how characteristics change with voltage and doping. 2. Estimating properties like diffusion coefficient and capacitance for an asymmetric diode with non-uniform doping. 3. Expanding a previous problem to include plotting diode conductance versus applied bias.

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0% found this document useful (0 votes)
186 views7 pages

HW 4

This document contains homework assignments for a microelectronic devices and circuits class. It includes 3 problems covering various topics: 1. A diode problem involving calculating current, capacitance, and how characteristics change with voltage and doping. 2. Estimating properties like diffusion coefficient and capacitance for an asymmetric diode with non-uniform doping. 3. Expanding a previous problem to include plotting diode conductance versus applied bias.

Uploaded by

Cantürk Çelik
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Spring 2003

Prof. J. A. del Alamo

6.012 Microelectronic Devices and Circuits

Homework #5 - April 4, 2003

ELEC 310

Due: April 11, 2003 at recitation (Rm. 26-310, 1 PM)


(late homework
will not# be
Homework
4 accepted)
Note: Ignore
points assigned
to problems
below.
Please
writeall your
recitation
session
time on your problem set solution.

1. [30 points] Below is a sketch not to scale of the minority carrier distribution across
the quasi-neutral regions of a forward-biased p-n diode. For this diode, Wp xp = 4 m,
Wn xn = 3 m, Dn = 25 cm2 /s, and Dp = 10 cm2 /s. The area of the junction is 10 m2 .
p-side

n-side

p(xn)=1014 cm-3

n(-xp)=1013 cm-3

p(x)

n(x)

ni2
Nd

ni2

Na

-Wp

xn

-xp

Wn

a) [5 points] Calculate the hole current injected into the n-side of the diode.
b) [5 points] Calculate the electron current injected into the p-side of the diode.
c) [5 points] Calculate the diffusion capacitance associated with carrier storage on the nside of the diode.
d) [5 points] Calculate the diffusion capacitance associated with carrier storage on the
p-side of the diode.
e) [5 points] How much should the voltage across the junction increase if we wish to double
the total current through the diode?
f ) [5 points] If we increase the voltage in the manner suggested in the previous question,
what happens to the total diffusion capacitance of the diode?
g) [5 points] What is the ratio of the doping levels across the junction: Na /Nd ?

h) [5 points] In what direction should Na /Nd change if we wish to redesign the diode so as to
get less diffusion capacitance at the same current level? (Assume that in redesigning
the diode Dn , Dp , Wn xn , and Wp xp do not change).
Choose one: Na /Nd must increase. Na /Nd must decrease. Explain.

2. [40 points] Consider an abrupt asymmetric n+ -p junction diode with a junction area of
100 m2 . All the action in this device is dominated by the lowly-doped p-type region.
Due to processing reasons, the diffusion coefficient of holes across the quasi-neutral p-type
region is not uniform. It suddenly changes half way down the n-QNR at location x1 . As a
at a current level of 400 A, the excess minority concentration in the quasi-neutral
2. result,
Problem
E6.16 of Howe & Sodini.
p-type region has a distribution as sketched below:

See page 4-5 for this problem


n'(x) (cm-3)

n'(xp)=1016
n'(x1)=8x1015

0.1 m
0

xp

x1

wp x (m)

0.2 m

At this bias point:


a) Estimate the electron diffusion coefficient in both portions of the quasi-neutral region.
b) Estimate the total amount of excess minority carrier charge in the diode.
c) Estimate the diffusion capacitance of the diode.
+
d) Estimate the electron diffusion velocity at x
1 and x1 .

3. [30 points] Problem P6.14 of Howe & Sodini. Add one more part to this problem:
c) Plot the conductance of this diode as a function of the applied bias over this voltage
range.

Spring 2003

Prof. J. A. del Alamo

6.012 Microelectronic Devices and Circuits

Homework #6 - April 25, 2003


Due: May 2, 2003 at recitation (Rm. 26-310, 12:55 PM)
(late homework will not be accepted)

Please write your recitation session time on your problem set solution.

Please note difference between Exercises, labeled Ex.y, and Problems, labeled Px.y!
1. [30 points] The figure below shows six possible ways of connecting an npn bipolar
3.

transistor that may yield a diode-like behavior. Using the ideal Non-Linear Hybrid- Model,
calculate the I-V characteristics of the two-terminal device in each configuration. Express
your result as a function of IS , F , and R .

I
V

I
V

V
V

V
B

Which of these configurations exhibit diode-like I-V characteristics?


2. [15 points] Problem E7.2 of Howe & Sodini. Note comment at beginning of Exercises
section.
3. [5 points] Problem E7.4 of Howe & Sodini. Note comment at beginning of Exercises

4.section.
Problem E7.5 of Howe & Sodini. Note comment at beginning of Exercises section.
4. [50 points] Problem P8.10 of Howe & Sodini. Dont do (e). Do instead:

See page 6-7 for this problem

e) Calculate the maximum amplitude of a sinusoidal signal signal applied to the input so
that the output waveform does not clip. What makes the output waveform clip if
this maximum signal is exceeded?

31

E6.16

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