2N3906
Vishay Semiconductors
New Product
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-226AA (TO-92)
0.142 (3.6)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
Features
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the NPN transistor
2N3904 is recommended.
On special request, this transistor is also
manufactured in the pin configuration TO-18.
This transistor is also available in the SOT-23 case
with the type designation MMBT3906.
Mechanical Data
max.
0.022 (0.55)
0.098 (2.5)
Dimensions in inches
and (millimeters)
Bottom
View
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Maximum Ratings & Thermal Characteristics
Parameter
Ratings at 25C ambient temperature unless otherwise specified.
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Collector-Base Voltage
VCBO
40
Emitter-Base Voltage
VEBO
5.0
IC
200
mA
Ptot
625
1.5
mW
W
RJA
250(1)
C/W
Junction Temperature
Tj
150
Storage Temperature Range
TS
65 to +150
Collector Current
Power Dissipation
TA = 25C
TC = 25C
Thermal Resistance Junction to Ambient Air
Note: (1) Valid provided that leads are kept at ambient temperature.
Document Number 88114
07-May-02
www.vishay.com
1
2N3906
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
hFE
-VCE = 1 V, -IC = 0.1 mA
-VCE = 1 V, -IC = 1 mA
-VCE = 1 V, -IC = 10 mA
-VCE = 1 V, -IC = 50 mA
-VCE = 1 V, -IC = 100 mA
60
80
100
60
30
300
Collector-Emitter Cutoff Current
-ICEV
-VEB = 3 V, -VCE = 30 V
50
nA
Emitter-Base Cutoff Current
-IEBV
-VEB = 3 V, -VCE = 30 V
50
nA
Collector Saturation Voltage
-VCEsat
-IC = 10 mA, -IB = 1 mA
-IC = 50 mA, -IB = 5 mA
0.25
0.4
Base Saturation Voltage
-VBEsat
-IC = 10 mA, -IB = 1 mA
-IC = 50 mA, -IB = 5 mA
0.85
0.95
Collector-Emitter Breakdown Voltage
-V(BR)CEO
-IC = 1 mA, IB = 0
40
Collector-Base Breakdown Voltage
-V(BR)CBO
-IC = 10 A, IE = 0
40
Emitter-Base Breakdown Voltage
-V(BR)EBO
-IE = 10 A, IC = 0
Input Impedance
hie
-VCE = 10 V, -IC = 1 mA,
f = 1 kHz
10
Voltage Feedback Ratio
hre
-VCE = 10 V, -IC = 1 mA,
f = 1 kHz
0.5 10-4
8 10-4
Current Gain-Bandwidth Product
fT
-VCE = 20 V, -IC = 10 mA
f = 100 MHz
250
MHz
Collector-Base Capacitance
CCBO
-VCB = 5 V, f = 100 kHz
4.5
pF
Emitter-Base Capacitance
CEBO
-VEB = 0.5 V, f = 100 kHz
10
pF
Small Signal Current Gain
hfe
-VCE = 10 V, -IC = 1 mA
f = 1 kHz
100
400
Output Admittance
hoe
-VCE = 1 V, -IC = 1 mA
f = 1 kHz
40
DC Current Gain
www.vishay.com
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Document Number 88114
07-May-02
2N3906
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T
Parameter
= 25C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
Noise Figure
-VCE = 5 V, -IC = 100 A,
RG = 1 k, f = 10...15000 Hz
dB
Delay Time (see fig. 1)
td
-IB1 = 1 mA, -IC = 10 mA
35
ns
Rise Time (see fig. 1)
tr
-IB1 = 1 mA, -IC = 10 mA,
35
ns
Storage Time (see fig. 2)
ts
IB1 = -IB2 = 1 mA,
-IC = 10 mA
225
ns
Fall Time (see fig. 2)
tf
IB1 = -IB2 = 1 mA,
-IC = 10 mA
75
ns
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
Document Number 88114
07-May-02
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors
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