FDP2614

N-Channel PowerTrench MOSFET

200 V, 62 A, 27 m
Features

General Description

RDS(on) = 22.9 m ( Typ.)@ VGS = 10 V, ID = 31 A

This N-Channel MOSFET is producedusing Fairchild Semiconductors advanced PowerTrench process that has been tailored to minimize the on-state resistance while maintaining
superior switching performance.

Fast Switching Speed

Low Gate Charge

Applications

High Performance Trench technology for Extremely Low

RDS(on)

Consumer Appliances

High Power and Current Handing Capability

Synchronous Rectification

RoHS Compliant

Battery Protection Circuit

Motor Drives and Uninterruptible Power Supplies
D

GD
S

TO-220
S

Absolute Maximum Ratings

Symbol

TC = 25C unless otherwise noted

Parameter

VDS

Drain-Source Voltage

FDP2614

Unit

200

30

62
39.3

A
A

(Note 1)

see Figure 9

145

mJ

VGS

Gate-Source Voltage

ID

Drain Current

- Continuous (TC = 25C)

- Continuous (TC = 100C)

IDM

Drain Current

- Pulsed

EAS

Single Pulsed Avalanche Energy

(Note 2)
(Note 3)

dv/dt

Peak Diode Recovery dv/dt

PD

Power Dissipation

TJ, TSTG

Operating and Storage Temperature Range

TL

Maximum Lead Temperature for Soldering Purpose,

1/8 from Case for 5 Seconds

(TC = 25C)
- Derate above 25C

4.5

V/ns

260
2.1

W
W/C

-55 to +150

300

FDP2614

Unit

Thermal Characteristics
Symbol

Parameter

RJC

Thermal Resistance, Junction-to-Case, Max.

0.48

C/W

RJA

Thermal Resistance, Junction-to-Ambient, Max.

62.5

C/W

2007 Fairchild Semiconductor Corporation

FDP2614 Rev. C3

www.fairchildsemi.com

FDP2614 N-Channel PowerTrench MOSFET

October 2013

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDP2614

FDP2614

TO-220

Tube

N/A

50 units

Electrical Characteristics
Symbol

TC = 25C unless otherwise noted

Parameter

Conditions

Min

Typ

Max

Unit

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250A, TJ = 25C

200

--

--

BVDSS
/ TJ

Breakdown Voltage Temperature

Coefficient

ID = 250A, Referenced to 25C

--

0.2

--

V/C

IDSS

Zero Gate Voltage Drain Current

VDS = 200V, VGS = 0V

VDS = 200V, VGS = 0V, TJ = 125C

---

---

10
500

A
A

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30V, VDS = 0V

--

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30V, VDS = 0V

--

--

-100

nA

3.0

4.0

5.0

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250A

RDS(on)

Static Drain-Source On-Resistance

VGS = 10V, ID = 31A

--

22.9

27

gFS

Forward Transconductance

VDS = 10V, ID = 31A

--

72

--

--

5435

7230

pF

--

505

675

pF

--

110

165

pF

--

77

165

ns

--

284

560

ns

--

103

220

ns

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25V, VGS = 0V

f = 1.0MHz

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 100V, ID = 62A

VGS = 10V, RGEN = 25
(Note 4)

VDS = 100V, ID = 62A

VGS = 10V

(Note 4)

--

162

335

ns

--

76

99

nC

--

35

--

nC

--

18

--

nC

--

--

62

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

--

186

VSD

Drain-Source Diode Forward Voltage

VGS = 0V, IS = 62A

--

--

1.2

trr

Reverse Recovery Time

145

--

ns

Reverse Recovery Charge

VGS = 0V, IS = 62A

dIF/dt =100A/s

--

Qrr

--

0.81

--

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 62A, di/dt 100A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics

2007 Fairchild Semiconductor Corporation

FDP2614 Rev. C3

www.fairchildsemi.com

FDP2614 N-Channel PowerTrench MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1000

V GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V

100

ID,Drain Current[A]

ID,Drain Current[A]

500

10

* Notes :
1. V DS = 10V
2. 250 s Pulse Test

100
o

150 C

10
o

-55 C

* Notes :
1. 250 s Pulse Test

25 C

1
0.1

2. T C = 25 C

1
V DS,Drain-Source Voltage[V]

10

Figure 3. On-Resistance Variation vs. Drain

Current and Gate Voltage
0.06

1000

IDR, Reverse Drain Current [A]

RDS(ON) [],

Drain-Source On-Resistance

0.05

VGS = 10V

0.03
VGS = 20V

0.02

* Notes :
1. VGS = 0V
2. ID = 250 A

100

50
100
150
ID, Drain Current [A]

10

1
0.2

200

VGS, Gate-Source Voltage [V]

Capacitances [pF]

C oss

* Note:
1. VGS = 0V
2. f = 1MHz

1
10
V DS, Drain-Source Voltage [V]

2007 Fairchild Semiconductor Corporation

FDP2614 Rev. C3

1.0

1.2

V DS = 40V

6000

0
0.1

0.8

10

C iss

C rss

0.6

Figure 6. Gate Charge Characteristics

C iss = C gs + C gd ( C ds = shorted)
C oss = C ds + C gd
C rss = C gd

3000

0.4

V SD , Source-Drain voltage [V]

Figure 5. Capacitance Characteristics

9000

T A = 150 C

T A = 25 C

0.015
0

4
6
V GS ,Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

* Note : T J = 25 C

0.04

V DS = 160V

30

V DS = 100V

* Note : ID = 62A

20

40
60
80
Q g , Total Gate Charge [nC]

100

www.fairchildsemi.com

FDP2614 N-Channel PowerTrench MOSFET

Typical Performance Characteristics

Figure 7. Breakdown Voltage Variation vs.

Temperature

Figure 8. On-Resistance Variation vs. Temperature

3.0

rDS(on), [Normalized]

1.1

1.0

0.9

0.8
-100

* Notes :
1. VGS = 0V
2. ID = 250 A

-50
0
50
100
o
T J, Junction Temperature [ C]

Drain-Source On-Resistance

BVDSS, [Normalized]

Drain-Source Breakdown Voltage

1.2

1.5
1.0
* Notes :
1. VGS = 10V
2. ID = 31A

0.5

-50
0
50
100
150
o
TJ, Junction Temperature [ C ]

200

Figure 10. Maximum Drain Current vs. CaseTemperature

1000

70
60

100

100 s

ID, Drain Current [A]

ID, Drain Current [A]

2.0

0.0
-100

150

Figure 9. Maximum Safe Operating Area

1ms

10

10 ms
Operation in This Area
is Limited by R DS(on)

DC

* Notes :

50
40
30
20

0.1

1. TC = 25 C

10

0.01

2.5

2. TJ = 150 C
3. Single Pulse

10
100
VDS, Drain-Source Voltage [V]

0
25

400

50
75
100
125
o
TC, Case Temperature [ C]

150

ZJC(t), Thermal Response [oC/W]

Figure 11. Transient Thermal Response Curve

10

0.5

10

-1

0.2

PDM

0.1

t1

0.05

10

-2

0.02
0.01

t2

* Notes :
o

1. Z JC(t) = 0.48 C/W Max.

2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z JC(t)

Single pulse

10

-3

10

-5

10

-4

-3

10

10

-2

-1

10

10

10

Rectangular Pulse Duration [sec]

2007 Fairchild Semiconductor Corporation

FDP2614 Rev. C3

www.fairchildsemi.com

FDP2614 N-Channel PowerTrench MOSFET

Typical Performance Characteristics (Continued)

FDP2614 N-Channel PowerTrench MOSFET

Figure 12. Gate Charge Test Circuit & Waveform

50K
50K

200nF
200n
F

12V

VGS

Same
Same T
Ty
ype
as DU
DUT
T

Qg

300nF
300n
F

VDS

VGS

Qgs

Qgd

DUT
DU
T
IG = const.

Charrge
Cha

Figure 13. Resistive Switching Test Circuit & Waveforms

VDS
RG

RL

VDS

90%

VDD

VGS

VGS

DUT
DUT

VGS

10%
10%

td(on
d( on))

tr

td(o
d( of f)

t on

t of
offf

tf

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VDS

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDS
DSS
S - VDD

L
BVDS
DSS
S
IAS

ID
RG
VGS

VDD

ID (t)

tp

2007 Fairchild Semiconductor Corporation

FDP2614 Rev. C3

VDS (t)

VDD

DUT

tp

Ti
Tim
me

www.fairchildsemi.com

FDP2614 N-Channel PowerTrench MOSFET

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD

Driver
Driv
er
RG

VGS

VGS
( Driver
Driver )

I SD
( DUT )

Same T
Same
Ty
ype
as DUT

VDD

dv/dt cont
ntrrolled b
byy RG
ISD con
onttrol
ollled by pu
pullse pe
perriod

Gate P
Pul
ulsse W idth
ul
D = -------------------------Gate
Ga
te Pu
Pullse Pe
Perriod

10V
10
V

IFM , Body
Body Di
Diod
ode
e Fo
Forward Cu
Curr
rren
entt
di/d
di
/dtt

IRM
Body
Bo
dy D
Diiod
ode
e Re
Reverse C
Cu
urren
entt

VDS
( DUT )

Body
Bo
dy Di
Diod
ode
e Recov
cove
ery dv
dv/d
/dtt

VSD

VDD

Body D
Body
Diiode
For
Forw
ward V
Vol
olttag
age
e Drop
Drop

2007 Fairchild Semiconductor Corporation

FDP2614 Rev. C3

www.fairchildsemi.com

FDP2614 N-Channel PowerTrench MOSFET

Mechanical Dimensions

TO-220 3L

Figure 16. TO-220, Molded, 3Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
Dimension in Millimeters
2007 Fairchild Semiconductor Corporation
FDP2614 Rev. C3

www.fairchildsemi.com

tm

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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2.

A critical component in any component of a life support, device, or

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

2007 Fairchild Semiconductor Corporation

FDP2614 Rev. C3

www.fairchildsemi.com

FDP2614 N-Channel PowerTrench MOSFET

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