DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
2N3904
NPN switching transistor
Product specification
Supersedes data of 1997 Jul 15
1999 Apr 23
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES
1Low current (max. 200 mA)
2Low voltage (max. 40 V).
APPLICATIONS
High-speed switching.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package. PNP complement: 2N3906.
LIMITING VALUES
2N3904
PINNING
PIN
DESCRIPTION
collector
base
emitter
handbook, halfpage1
MAM279
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
V
CBO
In accordance with the Absolute
Maximum Rating System (IEC 134).
SYMBOL
CEO
V
I
EBO
C
PARAMETER
CM
BM
collector-base
voltage peak base current
Note
P
collector-emitter
tot
voltagetotal power dissipation
T
1. Transistor mounted on an FR4
stg voltage
emitter-base
storage temperature
T
printed-circuit board.
collector current
j
(DC) junction temperature
amb current operating ambient temperature
peak collector
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
THERMAL CHARACTERISTICS
SYMBOL
th j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
note 1
UNIT
250
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 C.
I
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 30 V
CBO
collector cut-off current
EBO
emitter cut-off current
IC = 0; VEB = 6 V
DC current gain
VCE = 1 V; note 1
FE
BEsat
nA
50
nA
IC = 0.1 mA
60
IC = 1 mA
80
100
60
30
300
200
mV
200
mV
850
mV
950
mV
pF
IC = ic = 0; VEB = 500 mV; f = 1 MHz
pF
300
MHz
IC = 100 A; VCE = 5 V; RS = 1 k;
f = 10 Hz to 15.7 kHz
dB
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA; note 1
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
UNIT
50
IC = 50 mA
IC = 100 mA
CEsat
MAX.
IC = 10 mA
V
MIN.
IC = 50 mA; IB = 5 mA; note 1
IC = 10 mA; IB = 1 mA; note 1
IC = 50 mA; IB = 5 mA; note 1
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz
Switching times (between 10% and 90% levels); see Fig.2
t
turn-on time
ICon = 10 mA; IBon = 1 mA;
65
ns
td
delay time
IBoff = 1 mA
35
ns
off
rise time
turn-off time
35
240
ns
ns
storage time
200
ns
fall time
50
ns
on
tr
t
t
Note
1. Pulse test: tp 300 s; 0.02.
1999 Apr 23
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
RB
RC
BB
(probe)
oscilloscope 450
CC
V
o
450 oscilloscope
R2
Vi
(probe)
DUT
R1
MLB826
Vi = 5 V; T = 500 s; tp = 10 s; tr = tf 3 ns.
R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 .
VBB = 1.9 V; VCC = 3 V.
Oscilloscope input impedance Zi = 50 .
Fig.2 Test circuit for switching times.
1999 Apr 23
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
E
d
L
b
1
e1
3
b
L1
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
b1
5.2
0.48
0.66
0.45
4.8
1.7
4.2
5.0
0.40
0.56
0.40
4.4
1.4
3.6
e1
(1)
L1
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
EUROPEAN
JEDEC
EIAJ
TO-92
SC-43
ISSUE DATE
PROJECTION
97-02-28
1999 Apr 23
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above
one or more of the limiting values may cause permanent damage to the device. These are stress ratings only
and operation of the device at these or at any other conditions above those given in the Characteristics sections
of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of
these products can reasonably be expected to result in personal injury. Philips customers using or selling these
products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages
resulting from such improper use or sale.
1999 Apr 23
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
NOTES
1999 Apr 23
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Philips Electronics N.V. 1999
SCA63
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115002/00/03/pp8
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Date of release: 1999 Apr 23
Document order number: 9397 750
05386
