In addition, Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a non-volatile and
random access memory (RAM) which retains stored data even when power is turned
off (Fujitsu, n.d.). F-RAM is one of a growing number of alternative non-volatile
random-access memory technologies that offer the same functionality as flash
memory (Ferroelectric RAM, n.d.). The capacity of F-RAM has 1 Mbit of memory,
and it operates between 1.8 and 3.3 V (Electronic Design, Feb 21, 2014). Operating
temperature ranges from 40 to 85C. Since the FRAM supports high-speed mode,
it enables read and write at operating frequencies of 3.4 and 1 MHz, respectivelythe
same speed as conventional EEPROMs. Furthermore, it guarantees 10 trillion writeerase cycles, which is significantly higher than EEPROMs. As a result, the F-RAM
can replace EEPROMs for high-precision data capture, reducing power consumption
during data writing. In addition, random access to memory cells accelerates data
writing. The non-volatile FRAM retains data even when power is switched off.
Comparing with conventional non-volatile memory such as EEPROM and Flash, FRAM has advantages in faster writing, higher endurance and lower power
consumption. F-RAMs high-speed writing can take backup data at an instantaneous
power supply interruption. Not only that, F-RAM can record data more frequent than
EEPROM and Flash memories. When writing the data, EEPROM and Flash
memories need high voltage and thus, consume more power than F-RAM. F-RAM is
able to keep a battery life long. For example, the battery of battery-powered device
lives longer if F-RAM embedded (Fujitsu, n.d.). F-RAM memory can be written to in
as little as 55 nanoseconds (ns), compared to flash or EEPROM technologies where
typical write times are in the order of hundreds of micro seconds and milliseconds
(ms), making FRAM 1,000 to 10,000 times faster (Kumar, 2012). In contrast to flash
or EEPROM, FRAM core boasts very low memory access power requirements
needing just 1.5 V to read or write, compared to the over 10 V14 V write for flash
and EEPROM. The programming process in flash and EEPROM memories in which
data is written by putting a charge onto the floating gate limits the write cycle
endurance of these types of memories. FRAM, on the other hand, can be accessed for
more than 1000 trillion write/read cycles, or virtually an inexhaustible amount of
times in most low-power applications. FRAM devices exhibit a relatively high
immunity to radiation effects since information is stored as polarization and not as an
electric charge. Switching the polarization requires local application of an electric
field to the capacitor, so an alpha (or other radiation) hit is very unlikely to cause a
change in the polarization of a given cell.
References:
Electronic Design. (Feb 21, 2014). F-RAM With I2C Interface Boasts
1-Mbit Capacity.
Retrieved November 4, 2015, from
http://electronicdesign.com/memory/fram-i2c-interface-boasts-1mbit-capacity
Ferroelectric RAM. (n.d.). Wikipedia.
Retrieved November 4, 2015, from
https://en.wikipedia.org/wiki/Ferroelectric_RAM
Fujitsu. (n.d.). FRAM Overview.
Retrieved November 4, 2015, from
http://www.fujitsu.com/global/products/devices/semiconductor/memory/fram/over
view/features/index.html
Kumar, V.C. (August 27, 2012). FRAM MCUs for Dummies, Part 2:
FRAM characteristics and advantages.
Retrieved November 4, 2015, from
http://www.edn.com/design/systems-design/4394811/2/FRAMMCUS-For-Dummies--Part-2-
