2SK3878
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV)
2SK3878
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 1.0 (typ.)
High forward transfer admittance: Yfs = 7.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 720 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
Drain-gate voltage (RGS = 20 k)
VDGR
900
Gate-source voltage
VGSS
30
DC
(Note 1)
ID
Pulse
(Note 1)
IDP
27
Drain power dissipation (Tc = 25C)
PD
150
Single pulse avalanche energy
(Note 2)
EAS
778
mJ
Avalanche current
IAR
Repetitive avalanche energy (Note 3)
EAR
15
mJ
TOSHIBA
Channel temperature
Tch
150
Weight: 4.6 g (typ.)
Storage temperature range
Tstg
55~150
Drain current
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
JEITA
SC-65
216C1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
C/W
Note 1: Ensure that the channel temperature does not exceed 150C
during use of the device.
Note 2: VDD = 90 V, Tch = 25C, L = 17.6 mH, RG = 25 , IAR = 9 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
2006-11-13
2SK3878
Electrical Characteristics (Ta = 25C)
Characteristic
Symbol
Typ.
Max
Unit
VGS = 30 V, VDS = 0 V
10
V (BR) GSS
IG = 10 A, VDS = 0 V
30
IDSS
VDS = 720 V, VGS = 0 V
100
Drain cutoff current
Drain-source breakdown voltage
Min
IGSS
Gate leakage current
Drain-source breakdown voltage
Test Condition
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
Gate threshold voltage
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 4 A
1.0
1.3
Forward transfer admittance
Yfs
VDS = 15 V, ID = 4 A
3.5
7.0
Input capacitance
Ciss
2200
Reverse transfer capacitance
Crss
45
Output capacitance
Coss
190
25
65
20
120
60
34
26
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
0V
ton
4.7
Turn-on time
Switching time
Fall time
tf
Turn-off time
VOUT
RL = 100
Duty <
= 1%, tw = 10 s
toff
Total gate charge
(gate-source plus gate-drain)
ID = 4 A
10 V
VGS
Qgs
Gate-drain (Miller) charge
Qgd
ns
VDD
400 V
Qg
Gate-source charge
pF
VDD
400 V, VGS = 10 V, ID = 9 A
nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
Pulse drain reverse current
IDRP
27
(Note 1)
Forward voltage (diode)
VDSF
IDR = 9 A, VGS = 0 V
1.7
Reverse recovery time
trr
IDR = 9 A, VGS = 0 V,
1.4
Reverse recovery charge
Qrr
dIDR/dt = 100 A/s
16
Marking
TOSHIBA
K3878
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2006-11-13
2SK3878
ID VDS
ID VDS
20
COMMON SOURCE
Tc = 25C
PULSE TEST
COMMON SOURCE
Tc = 25C
PULSE TEST
15
10
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
10
6
5.5
5.25
4.75
2
VGS = 4.5 V
16
15
10
12
5.5
VGS = 4.5 V
0
10
DRAINSOURCE VOLTAGE VDS (V)
DRAINSOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
16
25
8
Tc = 55C
100
4
GATESOURCE VOLTAGE VGS
8
4.5
4
2.3
12
16
20
(V)
RDS (ON) ID
10
COMMON SOURCE
DRAINSOURCE ON RESISTANCE
RDS (ON) ()
FORWARD TRANSFER ADMITTANCE
Yfs (S)
ID = 9 A
GATESOURCE VOLTAGE VGS
COMMON SOURCE
VDS = 20 V
PULSE TEST
Tc = 55C
100
25
12
(V)
10
1
0.1
COMMON SOURCE
Tc = 25C
PULSE TEST
16
10
Yfs ID
100
20
VDS VGS
20
COMMON SOURCE
VDS = 20 V
PULSE TEST
12
16
DRAINSOURCE VOLTAGE VDS (V)
ID VGS
20
12
10
Tc = 25C
PULSE TEST
VGS = 10 V
1
0.1
100
DRAIN CURRENT ID (A)
10
100
DRAIN CURRENT ID (A)
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2SK3878
RDS (ON) Tc
IDR VDS
100
COMMON SOURCE
VGS = 10 V
PULSE TEST
DRAIN REVERSE CURRENT IDR (A)
3
ID = 9 A
2
4.5
2.3
0
80
40
40
80
CASE TEMPERATURE
120
COMMON SOURCE
Tc = 25C
PULSE TEST
10
VGS = 0 V
3
0.1
160
10
0.4
Tc (C)
0.8
C VDS
Vth Tc
Vth (V)
1000
GATE THRESHOLD VOLTAGE
Coss
100
Crss
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25C
1
0.1
10
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
0
80
100
40
DRAINSOURCE VOLTAGE VDS (V)
200
500
DRAINSOURCE VOLTAGE VDS (V)
PD (W)
40
160
120
80
40
40
80
120
CASE TEMPERATURE
80
120
160
Tc (C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
PD Tc
DRAIN POWER DISSIPATION
CASE TEMPERATURE
160
Tc
400
(C)
VDS
300
VDS = 400 V
200
20
16
12
100
200
VGS
100
0
0
200
COMMON SOURCE
ID = 9 A
Tc = 25C
PULSE TEST
(V)
CAPACITANCE C
(pF)
Ciss
0
0
1.6
10000
10
1.2
DRAINSOURCE VOLTAGE VDS (V)
20
40
60
80
GATESOURCE VOLTAGE VGS
DRAINSOURCE ON RESISTANCE
RDS (ON) ()
0
100
TOTAL GATE CHARGE Qg (nC)
2006-11-13
2SK3878
rth tw
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-a)
10
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
SINGLE PULSE
T
Duty = t/T
Rth (ch-c) = 0.833C/W
0.001
10
100
1m
10 m
100 m
PULSE WIDTH tw
(S)
SAFE OPERATING AREA
EAS Tch
100
1000
AVALANCHE ENERGY EAS (mJ)
DRAIN CURRENT ID (A)
ID max (PULSE) *
10
100 s *
ID max (CONTINUOUS)
1 ms *
DC OPERATION
Tc = 25C
0.1
SINGLE NONPETITIVE PULSE
Tc = 25C
Curves must be derated linearly with
10
100
1000
800
600
400
200
0
25
VDSS max
increase in temperature.
0.01
1
10
10000
50
75
100
CHANNEL TEMPERATURE (INITIAL)
125
150
Tch (C)
DRAINSOURCE VOLTAGE VDS (V)
15 V
BVDSS
IAR
15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 17.6 mH
VDS
WAVE FORM
AS =
1
B VDSS
L I2
B
V
VDSS
DD
2006-11-13
2SK3878
RESTRICTIONS ON PRODUCT USE
20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
2006-11-13
