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ECE II Sem: Electronic Devices Plan

This document provides a lesson plan for an Electronic Devices course taught during the 2013-2014 academic year. The course will cover topics related to semiconductor diodes, bipolar junction transistors, field effect transistors, special semiconductor devices, and power devices over 10 weeks. Key topics include PN junction diodes, BJT characteristics and models, JFET and MOSFET operation, and various optoelectronic devices. The course aims to familiarize students with electronic devices, their characteristics and applications.

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426 views3 pages

ECE II Sem: Electronic Devices Plan

This document provides a lesson plan for an Electronic Devices course taught during the 2013-2014 academic year. The course will cover topics related to semiconductor diodes, bipolar junction transistors, field effect transistors, special semiconductor devices, and power devices over 10 weeks. Key topics include PN junction diodes, BJT characteristics and models, JFET and MOSFET operation, and various optoelectronic devices. The course aims to familiarize students with electronic devices, their characteristics and applications.

Uploaded by

binukiruba
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SSN COLLEGE OF ENGINEERING, KALAVAKKAM 603 110

Department of Electronics and Communication Engineering


LESSON PLAN
2013 2014, Odd Semester

Staff Name: GULAM NABI ALSATH M

Designation: Asst. Professor

Subject: Electronic Devices

Subject Code: EC6201

Department: B.E. / ECE

Semester: II Sem - B

Aim:
The aim of this course is to familiarize the student with the electronic devices, their characteristics
and applications.
Objective:
The objective of this course is to acquaint the students with the construction, theory and operation of
the basic electronic devices such as PN junction diode, Bipolar and Field effect Transistors, Power control
devices, LED, LCD and other Opto-electronic devices.

Proposed date &


period of coverage

Topic

From

To

Hrs

SEMICONDUCTOR DIODE

Atomic theory a revisit,


Introduction to materials and
semiconductor material types
PN Junction diode Construction
Current equations Drift current
and Diffusion current densities
Forward and
characteristics

Reverse

Bias

Diode switching characteristics

07.02.2014

Unit
No.

20.01.2014

Sl.
No.

1
4
1
1

Actual date & period


of coverage
From

To

Hrs

Service
Status

Signature
of
Staff /
HOD

From

PNP

Early
effect
equations

and

Transistor hybrid
parameter model

junction
Current

Input and Output characteristics


of CE, CB and CC Transistors

III

Hrs

BIPOLAR JUNCTION

NPN
and
transistors

To

pi

and

2
28.02.2014

II

Topic

3
1

Ebers Moll and Gummel Poon


model

Multi-emitter transistor

FIELD EFFECT
TRANSISTORS

JFET Drain and Transfer


characteristics
Current equation pinch off
voltage and its significance
MOSFET Characteristics
threshold voltage Channel
length modulation

2
18.03.2014

Proposed date &


period of coverage

10.02.2014

Unit
No.

01.03.2014

Sl.
No.

DMOSFET and EMOSFET


Current equations

Equivalent circuit model and its


parameters

FINFET Dual Gate MOSFET

Actual date & period


of coverage
From

To

Hrs

Service
Status

Signature
of
Staff /
HOD

Sl.
No.

Unit
No.

IV

Proposed date &


period of coverage

Topic

From

To

SPECIAL
SEMICONDUCTOR
DEVICES

Hrs

Actual date & period


of coverage
From

To

Hrs

Service
Status

Signature
of
Staff /
HOD

Varactor diode, Tunnel diode

07.04.2014

Schottky barrier diode, Zener


diode

20.03.2014

Metal semiconductor junction MESFET


2
2

GaAs Device

LASER diode

LDR

POWEER DEVICES
DISPLAY DEVICES
UJT, SCR

AND
2

DMOS - VMOS

25.04.2014

Power BJT, Power MOSFET

2
08.04.2014

DIAC, TRIAC

1
1

LED, LCD

Photo transistor, Opto-coupler

Solar cell, CCD

Total

45 Hrs

TEXT BOOKS
1. Donald A Neaman, Semiconductor Physics and Devices, Third Edition, Tata Mc GrawHill Inc.
2007.
REFERENCES:
1. Yang, Fundamentals of Semiconductor devices, McGraw Hill International Edition, 1978.
2. Robert Boylestad and Louis Nashelsky, Electron Devices and Circuit Theory Pearson Prentice
Hall, 10th edition, July 2008.
Faculty In charge

HOD - ECE

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