2sk2225
PCB24
2SK2225
Silicon N Channel MOS FET
Application
TO3PFM
High speed power switching
Features
High breakdown voltage (VDSS = 1500 V)
High speed switching
Low drive current
No Secondary Breakdown
Suitable for Switching regulator, DC DC
converter
1. Gate
2. Drain
3. Source
2
3
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
1500
Gate to source voltage
VGSS
20
Drain current
ID
Drain peak current
ID(pulse)*
Bodydrain diode reverse drain current
IDR
Channel dissipation
Pch**
50
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
*
PW 10 s, duty cycle 1 %
** Value at Tc = 25 C
2SK2225
Table 2 Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
1500
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
VGS = 20 V, VDS = 0
Zero gate voltage drain current
IDSS
500
VDS =1200 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
4.0
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
12
ID = 1 A
VGS = 15 V *
Forward transfer admittance
|yfs|
0.45
0.75
ID = 1 A
VDS = 20 V *
Input capacitance
Ciss
990
pF
VDS = 10 V
Output capacitance
Coss
125
pF
VGS = 0
Reverse transfer capacitance
Crss
60
pF
f = 1 MHz
Turnon delay time
td(on)
17
ns
ID = 1 A
Rise time
tr
50
ns
Turnoff delay time
td(off)
150
ns
VGS = 10 V
RL = 30
Fall time
tf
50
ns
Bodydrain diode forward
voltage
VDF
0.9
IF = 2 A, VGS = 0
Bodydrain diode reverse
recovery time
trr
1750
ns
IF = 20 A, VGS = 0,
diF / dt = 100 A / s
* Pulse Test
2SK2225
Power vs. Temperature Derating
10
I D (A)
Drain Current
(1
sh
ot
c
(T
25
)
this area is
limited by R DS(on)
0.1 Operation in
Ta = 25 C
50
100
Case Temperature
150
Tc (C)
0.01
10
200
Typical Output Characteristics
5
Typical Transfer Characteristics
10 V
8V
Pulse Test
(A)
15 V
30
100 300 1000 3000 10000
Drain to Source Voltage V DS (V)
2.0
1.6
V DS = 25 V
Pulse Test
ID
7V
3
6V
5V
Drain Current
I D (A)
tio
ra
0.3
0.03
Drain Current
1
10
pe
20
40
PW
C
D
Channel Dissipation
60
Maximum Safe Operation Area
10
s
0
10
Pch (W)
80
1.2
0.8
0.4
Tc = 75 C
25 C
25 C
VGS = 4 V
0
20
40
60
Drain to Source Voltage
80
100
V DS (V)
2
4
6
Gate to Source Voltage
8
10
V GS (V)
2SK2225
Static Drain to Source State Resistance
vs. Drain Current
Pulse Test
40
I D= 3 A
30
2A
20
1A
10
0.5 A
0
Static Drain to Source on State Resistance
R DS(on) ( )
Drain to Source On State Resistance
R DS(on) ( )
50
4
8
12
Gate to Source Voltage
16
20
Static Drain to Source on State Resistance
vs. Temperature
20
I D= 2 A
16
12
0.5 A, 1 A
4
0
40
50
20
VGS = 10 V
15 V
10
5
2
Pulse Test
1
0.5
0.1
0.2
V GS (V)
VGS = 15 V
Pulse Test
0
40
80
120
160
Case Temperature Tc (C)
0.5
1
Drain Current
2
5
I D (A)
10
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
V DS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
V DS = 25 V
Pulse Test
5
2
1
Tc = 25 C
25 C
75 C
0.5
0.2
0.1
0.05
0.1
0.2
0.5
Drain Current I D (A)
2SK2225
10000
Capacitance C (pF)
5000
Reverse Recovery Time trr (ns)
Typical Capacitance vs.
Drain to Source Voltage
BodyDrain Diode Reverse
Recovery Time
2000
1000
500
200
di / dt = 100 A / s, Ta = 25 C
V GS = 0, Pulse Test
Coss
100
Crss
10
0.05 0.1 0.2
0.5
1
2
Reverse Drain Current I DR (A)
12
600
400
200
V DD = 250 V
400 V
600 V
I D = 2.5 A
20
40
60
80
Gate Charge Qg (nc)
0
100
V GS (V)
16
VGS
500
Switching Time t (ns)
VDS
30
40
50
1000
Gate to Source Voltage
800
20
Switching Characteristics
20
V DD = 250 V
400 V
600 V
10
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
1000
V DS (V)
Ciss
1000
100
50
Drain to Source Voltage
VGS = 0
f = 1 MHz
t d(off)
V GS = 10 V
PW = 2 s
duty < 1 %
200
100
tf
50
20
tr
t d(on)
10
0.05 0.1
0.2
0.5
Drain Current
1
2
I D (A)
2SK2225
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
4
10 V, 15 V
V GS = 0, 5 V
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
s (t)
Reverse Drain Current I DR (A)
0.3
Tc = 25C
D=1
0.5
0.2
0.1
ch c(t) = s (t) ch c
ch c = 2.50 C/W, Tc = 25 C
0.1
0.03
0.05
0.02
0.01
PDM
lse
t
ho
100
PW
T
PW
pu
1s
0.01
10
D=
1m
10 m
Pulse Width
100 m
PW (S)
10
2SK2225
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50
V DD
= 30 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
