Scribd
Upload
42 views1 page

Shantou Huashan Electronic Devices Co.,Ltd.: CEO B EBO FE 1 FE 2 CE (Sat) 1 CE (Sat) 2 CE (Sat) 3 BE (Sat) 1 B BE (Sat) 2

This document provides specifications for the HE13009 high voltage silicon transistor. It is suitable for high speed switching applications like switching regulators and monitor controls. The transistor has a maximum collector-emitter voltage of 400V and can dissipate up to 100W. It also has high current and voltage gain properties making it well-suited for switching applications. Key electrical characteristics including saturation voltages, current gain, and switching times are provided.

Uploaded by

Alejandro Borrego Dominguez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
42 views1 page

Shantou Huashan Electronic Devices Co.,Ltd.: CEO B EBO FE 1 FE 2 CE (Sat) 1 CE (Sat) 2 CE (Sat) 3 BE (Sat) 1 B BE (Sat) 2

This document provides specifications for the HE13009 high voltage silicon transistor. It is suitable for high speed switching applications like switching regulators and monitor controls. The transistor has a maximum collector-emitter voltage of 400V and can dissipate up to 100W. It also has high current and voltage gain properties making it well-suited for switching applications. Key electrical characteristics including saturation voltages, current gain, and switching times are provided.

Uploaded by

Alejandro Borrego Dominguez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

N P N S I L I C O N T RAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HE13009
HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control

ABSOLUTE MAXIMUM RATINGSTa=25

TO-220

TstgStorage Temperature -55~150


TjJunction Temperature 150
PCCollector DissipationTc=25 100W
VCBOCollector-Base Voltage 700V
VCEOCollector-Emitter Voltage 400V

1BaseB
2CollectorC
3Emitter, E

VEBO Emitter-Base Voltage 9V


ICCollector CurrentDC 12A
IBBase Current6A

ELECTRICAL CHARACTERISTICSTa=25
Symbol

BVCEO
IEBO
HFE1

Characteristics
Collector-Emitter Breakdown Voltage

Min

Typ

400
1

Emitter-Base Cut-off Current

DC Current Gain

HFE2

Max

Unit

Test Conditions

IC=10mA, IB=0

mA

VEB=9V, IC=0

40

VCE=5V, IC=5A

30

VCE=5V, IC=8A

IC=5A, IB=1A

VCE(sat)2

1.5

IC=8A, IB=1.6A

VCE(sat)3

IC=12A, IB=3A

1.2

IC=5A, IB=1A

1.6

IC=8A, IB=1.6A

pF

VCB=10V,f=0.1MHz

MHz

VCE=10V,IC=0.5A

VCE(sat)1

VBE(sat)1

Collector- Emitter Saturation Voltage

Base-Emitter Saturation Voltage

VBE(sat)2
Cob

180

Output Capacitance
4

fT

Current Gain-Bandwidth Product

tON

Turn On Time

1.1

tSTG

Storage Time

VCC=125V, IC=8A,

0.7

IB1=1.6A,IB2=-1.6A

tF

Fall Time

You might also like