ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT

General Description

Applications
Automotive Ignition Coil Driver Circuits
Coil- On Plug Applications

The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next

generation IGBTs that offer outstanding SCIS capability in the D Pak (TO-263) and TO-220 plastic package. These devices are
intended for use in automotive ignition circuits, specifically as coil
drivers. Internal diodes provide voltage clamping without the need
for external components.

Features
Industry Standard D-Pak package
SCIS Energy = 500mJ at TJ = 25oC
Logic Level Gate Drive

EcoSPARK devices can be custom made to specific clamp

voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49443

Package

Symbol
COLLECTOR

JEDEC TO-263AB
D-Pak

JEDEC TO-220AB

JEDEC TO-262AA
EC

EC

R1
GATE

G
R2

E
EMITTER

COLLECTOR
(FLANGE)

COLLECTOR
(FLANGE)

Device Maximum Ratings TA = 25C unless otherwise noted

Symbol
BVCER

Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)

Ratings
390

Units
V

BVECS

Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)

24

ESCIS25

At Starting TJ = 25C, ISCIS = 38.5A, L = 670 Hy

500

mJ

ESCIS150

At Starting TJ = 150C, ISCIS = 30A, L = 670 Hy

300

mJ

IC25

Collector Current Continuous, At TC = 25C, See Fig 9

46

IC110

Collector Current Continuous, At TC = 110C, See Fig 9

31

VGEM

Gate to Emitter Voltage Continuous

10

PD

Power Dissipation Total TC = 25C

250

Power Dissipation Derating TC > 25C

1.67

W/C

Operating Junction Temperature Range

-40 to 175

Storage Junction Temperature Range

-40 to 175

Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)

300

Tpkg

Max Lead Temp for Soldering (Package Body for 10s)

260

ESD

Electrostatic Discharge Voltage at 100pF, 1500

kV

TJ
TSTG
TL

2002 Fairchild Semiconductor Corporation

ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

September 2002

Device Marking
V5036S

Device
ISL9V5036S3S

Package
TO-263AB

Tape Width
24mm

Quantity
800

V5036P

ISL9V5036P3

TO-220AA

V5036S

ISL9V5036S3

TO-262AA

Electrical Characteristics TA = 25C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off State Characteristics

BVCER

Collector to Emitter Breakdown Voltage

IC = 2mA, VGE = 0,
RG = 1K, See Fig. 15
TJ = -40 to 150C

330

360

390

BVCES

Collector to Emitter Breakdown Voltage

IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150C

360

390

420

BVECS

Emitter to Collector Breakdown Voltage

IC = -75mA, VGE = 0V,

TC = 25C

30

BVGES

Gate to Emitter Breakdown Voltage

IGES = 2mA

Collector to Emitter Leakage Current

VCER = 250V,
RG = 1K,
See Fig. 11

ICER

IECS

Emitter to Collector Leakage Current

R1

Series Gate Resistance

R2

Gate to Emitter Resistance

12

14

TC = 25C

25

TC = 150C

mA

VEC = 24V, See TC = 25C

Fig. 11
TC = 150C

mA

40

mA

75

10K

30K

On State Characteristics
VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 10A,
VGE = 4.0V

TC = 25C,
See Fig. 4

1.17

1.60

VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 15A,
VGE = 4.5V

TC = 150C

1.50

1.80

32

nC

TC = 25C

1.3

2.2

TC = 150C

0.75

1.8

3.0

Dynamic Characteristics
QG(ON)

Gate Charge

IC = 10A, VCE = 12V,

VGE = 5V, See Fig. 14

VGE(TH)

Gate to Emitter Threshold Voltage

IC = 1.0mA,
VCE = VGE,
See Fig. 10

VGEP

Gate to Emitter Plateau Voltage

IC = 10A,
VCE = 12V

Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
SCIS

Current Turn-On Delay Time-Resistive

Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching

VCE = 14V, RL = 1,
VGE = 5V, RG = 1K
TJ = 25C, See Fig. 12

0.7

2.1

VCE = 300V, RL = 46,

VGE = 5V, RG = 1K
TJ = 25C, See Fig. 12

4.8

15

2.8

15

TJ = 25C, L = 670 H,
RG = 1K, VGE = 5V, See
Fig. 1 & 2

500

mJ

TO-263, TO-220

0.6

C/W

Thermal Characteristics
RJC

Thermal Resistance Junction-Case

2002 Fairchild Semiconductor Corporation

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Package Marking and Ordering Information

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

45
RG = 1K, VGE = 5V,Vdd = 14V
40
35
30
TJ = 25C

25
20
15

TJ = 150C

10
5
SCIS Curves valid for Vclamp Voltages of <390V

45
RG = 1K, VGE = 5V,Vdd = 14V

40
35
30
25
20

TJ = 25C
15
TJ = 150C
10
5
SCIS Curves valid for Vclamp Voltages of <390V
0

0
0

50

100

150

200

250

300

350

tCLP, TIME IN CLAMP (S)

1.10
ICE = 6A
1.05
VGE = 3.7V
VGE = 4.0V

1.00

VGE = 4.5V
VGE = 5.0V
VGE = 8.0V

0.90

0.85
-50

-25

25

50

75

100

10

125

150

1.25
ICE = 10A
1.20
VGE = 3.7V

1.10
VGE = 4.5V
VGE = 5.0V
1.05

VGE = 8.0V

1.00
-50

175

VGE = 4.0V

1.15

-25

TJ, JUNCTION TEMPERATURE (C)

25

50

75

100

125

150

175

TJ, JUNCTION TEMPERATURE (C)

Figure 3. Collector to Emitter On-State Voltage vs

Junction Temperature

Figure 4. Collector to Emitter On-State Voltage

vs Junction Temperature

50

50
ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

Figure 2. Self Clamped Inductive Switching

Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 1. Self Clamped Inductive Switching

Current vs Time in Clamp

0.95

L, INDUCTANCE (mHy)

VGE = 8.0V
VGE = 5.0V
40

VGE = 4.5V
VGE = 4.0V
VGE = 3.7V

30

20

10
TJ = - 40C
1.0

2.0

3.0

4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector Current vs Collector Emitter

On-State Voltage

2002 Fairchild Semiconductor Corporation

VGE = 5.0V
40

VGE = 4.5V
VGE = 4.0V
VGE = 3.7V

30

20

10
TJ = 25C

0
0

VGE = 8.0V

1.0

2.0

3.0

4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 6. Collector Current vs Collector Emitter

On-State Voltage

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Typical Characteristics

50
ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

50
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V

40

VGE = 4.0V
VGE = 3.7V
30

20

10
TJ = 175C
0

1.0

2.0

3.0

DUTY CYCLE < 0.5%, VCE = 5V

PULSE DURATION = 250s
40

30
TJ = 175C
20
TJ = 25C
10
TJ = -40C
0
1.5

1.0

4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

2.5

2.0

3.0

3.5

4.0

4.5

VGE, GATE TO EMITTER VOLTAGE (V)

Figure 7. Collector to Emitter On-State Voltage vs

Collector Current

Figure 8. Transfer Characteristics

40

30

20

10

0
25

50

75

100

125

150

VCE = VGE

2.0

VGE = 4.0V
VTH, THRESHOLD VOLTAGE (V)

ICE, DC COLLECTOR CURRENT (A)

50
ICE = 1mA

1.8

1.6

1.4

1.2

1.0

175

-50

-25

TC, CASE TEMPERATURE (C)

50

75

100

125

150

175

TJ JUNCTION TEMPERATURE (C)

Figure 9. DC Collector Current vs Case

Temperature

Figure 10. Threshold Voltage vs Junction

Temperature
20

10000

ICE = 6.5A, VGE = 5V, RG = 1K

Resistive tOFF

18

VECS = 24V
1000

16
SWITCHING TIME (S)

LEAKAGE CURRENT (A)

25

100
VCES = 300V
10
VCES = 250V

14
Inductive tOFF
12
10
8
6

Resistive tON
4

0.1

-50

-25

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (C)

Figure 11. Leakage Current vs Junction

Temperature

2002 Fairchild Semiconductor Corporation

175

2
25

50

75

100

125

150

175

TJ, JUNCTION TEMPERATURE (C)

Figure 12. Switching Time vs Junction

Temperature

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Typical Characteristics (Continued)

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Typical Characteristics (Continued)

3000

8
IG(REF) = 1mA, RL = 0.6, TJ = 25C
VGE, GATE TO EMITTER VOLTAGE (V)

FREQUENCY = 1 MHz

C, CAPACITANCE (pF)

2500

2000
CIES
1500

1000
CRES
500
COES

7
6
5
VCE = 12V
4
3
2
VCE = 6V

0
0

10

15

20

25

10

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

20

30

40

50

QG, GATE CHARGE (nC)

Figure 13. Capacitance vs Collector to Emitter

Voltage

Figure 14. Gate Charge

360
TJ = - 40C

BVCER, BREAKDOWN VOLTAGE (V)

ICER = 10mA
358
356
354
TJ = 175C
352

TJ = 25C

350
348
346
344
342
340

10

100

1000

2000

3000

RG, SERIES GATE RESISTANCE (k)

ZthJC, NORMALIZED THERMAL RESPONSE

Figure 15. Breakdown Voltage vs Series Gate Resistance

100

0.5
0.2

10-1

0.1
0.05

t1

0.02
10-2

0.01

PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZJC X RJC) + TC

10-3
SINGLE PULSE

10-4
10-6

10-5

10-4

10-3

10-2

10-1

T1, RECTANGULAR PULSE DURATION (s)

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

2002 Fairchild Semiconductor Corporation

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

L
VCE

R
or
L

PULSE
GEN

LOAD

RG

RG = 1K

DUT

DUT

VCE

5V
E
E

Figure 17. Inductive Switching Test Circuit

Figure 18. tON and tOFF Switching Test Circuit

VCE

BVCES
tP
VCE

L
IAS

VDD

VARY tP TO OBTAIN
REQUIRED PEAK IAS

RG

VDD
-

VGS
DUT
tP
0V

IAS

0
0.01
tAV

Figure 19. Energy Test Circuit

2002 Fairchild Semiconductor Corporation

Figure 20. Energy Waveforms

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Test Circuits and Waveforms

th

JUNCTION

REV 1 May 2002

ISL9V5036S3S / ISL9V3536P3 / ISL9V5036S3
CTHERM1 th 6 4.0e2
CTHERM2 6 5 3.6e-3
CTHERM3 5 4 4.9e-2
CTHERM4 4 3 3.2e-1
CTHERM5 3 2 3.0e-1
CTHERM6 2 tl 1.6e-2

RTHERM1

CTHERM1

RTHERM1 th 6 1.0e-2
RTHERM2 6 5 1.4e-1
RTHERM3 5 4 1.0e-1
RTHERM4 4 3 9.0e-2
RTHERM5 3 2 9.4e-2
RTHERM6 2 tl 1.9e-2

RTHERM2

CTHERM2

SABER Thermal Model

SABER thermal model
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 4.0e2
ctherm.ctherm2 6 5 = 3.6e-3
ctherm.ctherm3 5 4 = 4.9e-2
ctherm.ctherm4 4 3 = 3.2e-1
ctherm.ctherm5 3 2 = 3.0e-1
ctherm.ctherm6 2 tl = 1.6e-2
rtherm.rtherm1 th 6 = 1.0e-2
rtherm.rtherm2 6 5 = 1.4e-1
rtherm.rtherm3 5 4 = 1.0e-1
rtherm.rtherm4 4 3 = 9.0e-2
rtherm.rtherm5 3 2 = 9.4e-2
rtherm.rtherm6 2 tl = 1.9e-2
}

RTHERM3

CTHERM3

RTHERM4

CTHERM4

RTHERM5

CTHERM5

CTHERM6

RTHERM6

tl

2002 Fairchild Semiconductor Corporation

CASE

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

SPICE Thermal Model

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
FACT
ActiveArray
FACT Quiet Series
Bottomless
FAST
CoolFET
FASTr
CROSSVOLT FRFET
DOME
GlobalOptoisolator
EcoSPARK
GTO
E2CMOSTM
HiSeC
EnSignaTM
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop

ImpliedDisconnect PACMAN
POP
ISOPLANAR
Power247
LittleFET
PowerTrench
MicroFET
QFET
MicroPak
QS
MICROWIRE
QT Optoelectronics
MSX
Quiet Series
MSXPro
RapidConfigure
OCX
RapidConnect
OCXPro
SILENT SWITCHER
OPTOLOGIC
SMART START
OPTOPLANAR

SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I1