TP0610K
New Product
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V)
rDS(on) ()
VGS(th) (V)
ID (mA)
60
6 @ VGS = 10 V
1 to 3.0
185
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply Converter Circuits
D Solid State Relays
High-Side Switching
Low On-Resistance: 6
Low Threshold: 2 V (typ)
Fast Swtiching Speed: 20 ns (typ)
Low Input Capacitance: 20 pF (typ)
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven Without Buffer
TO-236
(SOT-23)
G
1
Marking Code: 6Kwll
3
6K = Part Number Code for TP0610K
w = Week Code
ll = Lot Traceability
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
"20
Continuous Drain Currenta
Pulse Drain
Currentb
Power Dissipationa
Maximum Junction-to-Ambienta
Operating Junction and Storage Temperature Range
ID
IDM
TA = 25_C
TA = 100_C
185
TA = 25_C
TA = 100_C
Unit
115
mA
800
350
PD
140
mW
RthJA
350
_C/W
TJ, Tstg
55 to 150
_C
Notes
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71411
S-04279Rev. C, 16-Jul-01
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11-1
TP0610K
New Product
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 10 A
60
VGS(th)
VDS = VGS, ID = 250 A
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source
On-Resistancea
Forward Transconductancea
Diode Forward
Voltagea
3.0
VDS = 0 V, VGS = "20 V
"10
VDS = 0 V, VGS = "10 V
"200
VDS = 0 V, VGS = "10 V, TJ = 85_C
"500
VDS = 0 V, VGS = "5 V
"100
VDS = 50 V, VGS = 0 V
25
VDS = 50 V, VGS = 0 V, TJ = 85_C
250
VDS = 10 V, VGS = 4.5 V
50
VDS = 10 V, VGS = 10 V
600
10
VGS = 10 V, ID = 500 mA
VGS = 10 V, ID = 500 mA, TJ = 125_C
gfs
VDS = 10 V, ID = 100 mA
VSD
IS = 200 mA, VGS = 0 V
A
nA
mA
VGS = 4.5 V, ID = 25 mA
rDS(on)
80
mS
1.4
Dynamic
Total Gate Charge
Qg
1.7
VDS = 30 V, VGS = 15 V, ID ^ 500 mA
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
0.46
Input Capacitance
Ciss
23
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
0.26
10
nC
pF
Switchingb
Turn-On Time
tON
Turn-Off Time
tOFF
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Switching time is essentially independent of operating temperature.
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11-2
VDD = 25 V, RL = 150
ID ^ 200 mA, VGEN = 10 V
RG = 10
20
ns
35
TPJO60
Document Number: 71411
S-04279Rev. C, 16-Jul-01
TP0610K
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Output Characteristics
1.0
Transfer Characteristics
1200
VGS = 10 V
TJ = 55_C
7V
0.8
0.6
I D Drain Current (mA)
I D Drain Current (A)
8V
6V
0.4
5V
0.2
900
25_C
125_C
600
300
4V
0.0
0
VDS Drain-to-Source Voltage (V)
10
VGS Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
40
20
16
32
C Capacitance (pF)
r DS(on) On-Resistance ( )
VGS = 0 V
VGS = 4.5 V
12
VGS = 5 V
8
VGS = 10 V
Ciss
24
16
Coss
8
Crss
0
0
200
400
600
800
1000
ID Drain Current (mA)
15
20
25
VDS Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
15
1.8
ID = 500 mA
r DS(on) On-Resistance ( )
(Normalized)
V GS Gate-to-Source Voltage (V)
10
12
VDS = 30 V
VDS = 48 V
9
0
0.0
0.3
0.6
0.9
1.2
Qg Total Gate Charge (nC)
Document Number: 71411
S-04279Rev. C, 16-Jul-01
1.5
1.8
1.5
VGS = 10 V @ 500 mA
1.2
VGS = 4.5 V @ 25 mA
0.9
0.6
0.3
0.0
50
25
25
50
75
100
125
150
TJ Junction Temperature (_C)
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11-3
TP0610K
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
10
1000
VGS = 0 V
r DS(on) On-Resistance ( )
I S Source Current (A)
8
100
TJ = 125_C
10
TJ = 25_C
TJ = 55_C
ID = 500 mA
4
ID = 200 mA
2
1
0.00
0.3
0.6
0.9
1.2
1.5
VSD Source-to-Drain Voltage (V)
10
VGS Gate-to-Source Voltage (V)
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
0.5
0.4
ID = 250 A
2.5
0.3
2
0.2
Power (W)
V GS(th) Variance (V)
0.1
1.5
0.0
1
TA = 25_C
0.1
0.5
0.2
0.3
50
0
25
25
50
75
100
125
150
0.01
0.1
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
10
Time (sec)
TJ Junction Temperature (_C)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 350_C/W
3. TJM TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
104
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11-4
103
102
101
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71411
S-04279Rev. C, 16-Jul-01
