Scribd
Upload
32 views4 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The 2SD1555 is a silicon NPN power transistor in a TO-3P(H)IS package intended for use in color TV horizontal output applications. It has a built-in damper diode, is high voltage and high speed, and has a low collector saturation voltage. The transistor has a maximum collector-emitter voltage of 600V, collector current of 5A, and power dissipation of 50W. Key electrical characteristics include a collector-emitter saturation voltage of 5V maximum at 4A collector current and 0.8A base current.

Uploaded by

Andi Gian
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
32 views4 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The 2SD1555 is a silicon NPN power transistor in a TO-3P(H)IS package intended for use in color TV horizontal output applications. It has a built-in damper diode, is high voltage and high speed, and has a low collector saturation voltage. The transistor has a maximum collector-emitter voltage of 600V, collector current of 5A, and power dissipation of 50W. Key electrical characteristics include a collector-emitter saturation voltage of 5V maximum at 4A collector current and 0.8A base current.

Uploaded by

Andi Gian
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

SavantIC Semiconductor

Product Specification

2SD1555

Silicon NPN Power Transistors

DESCRIPTION
With TO-3P(H)IS package
Built-in damper diode
High voltage ,high speed
Low collector saturation voltage
APPLICATIONS
For color TV horizontal output applications
PINNING
PIN

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3P(H)IS) and symbol

Absolute maximum ratings (Ta=25 )


SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1500

VCEO

Collector-emitter voltage

Open base

600

VEBO

Emitter-base voltage

Open collector

2.5

50

IC

Collector current

IB

Base current

PC

Collector power dissipation

Tj

Junction temperature

150

Tstg

Storage temperature

-55~150

Downloaded from: http://www.datasheetcatalog.com/

TC=25

SavantIC Semiconductor

Product Specification

2SD1555

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25

unless otherwise specified

SYMBOL

V(BR)EBO

PARAMETER

CONDITIONS

Emitter-base breakdown voltage

IE=0.2A , IC=0

VCEsat

Collector-emitter saturation voltage

IC=4A ;IB=0.8A

VBEsat

Base-emitter saturation voltage

ICBO

hFE

MIN

TYP.

MAX

UNIT

5.0

IC=4A; IB=0.8A

1.5

Collector cut-off current

VCB=500V; IE=0

10

DC current gain

IC=1A ; VCE=5V

Transition frequency

IC=0.1A ; VCE=10V

COB

Collector output capacitance

IE=0 ; VCB=10V;f=1MHz

VF

Diode forward voltage

IF=5A

Fall time

ICP=4A ;IB1(end)=0.8A

fT

tf

Downloaded from: http://www.datasheetcatalog.com/

3.0

MHz

165

pF

0.5

2.0

1.0

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)

Downloaded from: http://www.datasheetcatalog.com/

2SD1555

This datasheet has been downloaded from:


www.DatasheetCatalog.com
Datasheets for electronic components.

Downloaded from: http://www.datasheetcatalog.com/

You might also like