DEE6113: CMOS INTEGRATED
CIRCUIT DESIGN
CHAPTER OUTLINE
3.1: Know NMOS and PMOS transistor
3.2: Understand static CMOS inverter
3.3: Apply knowledge of inverter
characteristics
operation
in
CMOS
inverter
KNOW NMOS & PMOS TRANSISTOR
MOS transistor known as MOSFET (metal oxide
semiconductor field effect transistor).
MOSFET comprise of PMOS and NMOS. The
combination of these two devices form CMOS
technology. What is CMOS?
MOSFET is widely used nowadays in electronic
equipment,
e.g.
mobile
phone,
medical electronic equipment, etc.
computer,
KNOW NMOS & PMOS TRANSISTOR
NMOS
Symbol
Thin oxide
Cross section
KNOW NMOS & PMOS TRANSISTOR
PMOS
Symbol
Thin oxide
Cross section
KNOW NMOS & PMOS TRANSISTOR
Operations of MOS transistor under static condition:
Cut-off
Linear / Resistive
Saturation
In this section, we concentrate on NMOS device.
KNOW NMOS & PMOS TRANSISTOR
Cut-off
KNOW NMOS & PMOS TRANSISTOR
Channel existence
KNOW NMOS & PMOS TRANSISTOR
KNOW NMOS & PMOS TRANSISTOR
Linear / Resistive
KNOW NMOS & PMOS TRANSISTOR
Saturation
KNOW NMOS & PMOS TRANSISTOR
I-V
characteristics
of NMOS
transistor
KNOW NMOS & PMOS TRANSISTOR
I-V characteristics of NMOS vs. PMOS
NMOS
PMOS
CMOS
NMOS AS SWITCH
Vout
NMOS transistor switch model
Vout
PMOS AS SWITCH
Vout
a)
PMOS transistor switch model
Vout
b)
MOS TRANSISTOR AS SWITCHES
Function of MOS transistor as switch
PMOS
ON
Direct path exist
between Vout
and VDD
OFF
NMOS
OFF
ON
Direct path exist
between Vout and
ground node
UNDERSTAND STATIC CMOS
INVERTER
Why do we choose PMOS switch as Pull-up Network
(PUN) which is tied to VDD and NMOS switch as Pulldown Network (PDN) which tied to ground?
The answer is: VOLTAGE
DROP
UNDERSTAND STATIC CMOS
INVERTER
UNDERSTAND STATIC CMOS
INVERTER
UNDERSTAND STATIC CMOS
INVERTER
MOS TRANSISTOR AS PASS-TRANSISTOR
Widely used as an alternative to CMOS technology.
Pass transistor reduces the number of transistor required to
implement a logic.
Allow primary inputs to drive gate terminal as well as
source/drain terminals.
MOS transistor as pass-transistor
NMOS is called a degraded 1
PMOS is called a degraded 0
UNDERSTAND STATIC CMOS
INVERTER
UNDERSTAND STATIC CMOS
INVERTER
Transistors can be used as switches
g=0
g
s
Input g = 1 Output
0
strong 0
g=1
NMOS
d
g=0
g
s
s
g=1
Input
d
d
g=1
PMOS
degraded 1
g=0
Output
degraded 0
g=0
strong 1
CMOS INVERTER
Inverter is the most basic logic gate in Boolean
operation on a single input variable.
Symbol, circuit diagram and truth table of CMOS inverter
OPERATION
PMOS
NMOS
INVERTER SWITCH MODEL
Circuit diagram of inverter
CMOS INVERTER
When Vin is high and equal to VDD, the NMOS transistor is ON, while the
PMOS is OFF. A direct path exists between Vout and the ground node,
resulting in a steady-state value of 0V.
When the input voltage is low (0V), NMOS transistor is OFF, while PMOS
transistors in ON. A direct path exists between VDD and Vout, resulting in a
steady-state value of VDD.
VOLTAGE TRANSFER
CHARACTERISTICS (VTC)
Combining the IV characteristics of PMOS and NMOS
VOLTAGE TRANSFER CHARACTERISTICS (VTC)
NMOS off
PMOS res
NMOS sat
PMOS res
NMOS sat
PMOS sat
NMOS res
PMOS sat
NMOS res
PMOS off
CMOS inverter VTC is produced from IV curve of both NMOS and PMOS.
CHARACTERISTIC PARAMETERS
OF CMOS INVERTER
NOISE MARGIN
Noise margin is a measure of sensitivity of a gate to noise.
Represents the level of noise that can be sustained when
gates are cascaded.
Ability of a circuit to overpower a noise source.
VOH , VIH - nominal high voltage
VOL, VIL - nominal low voltage
VM gate or switching threshold voltage
VM
can
be
found
graphically
at
the
intersection of the VTC curve and the line
given by Vout = Vin.
The gate threshold voltage presents the
midpoint of the switching characteristics.
CMOS INVERTER IDEAL VTC
Ideally, VTC appears as
an inverted step-function.
We can see the precise
switching
and OFF.
Logic 1
Logic 0
between
ON
NOISE MARGIN
How much noise can a gate input see before it does not recognize the input?
PROPAGATION DELAY
PROPAGATION DELAY
Propagation delay of a gate defines how quickly it
responds to a change at its inputs and expresses
the delay experienced by a signal when passing
through a gate.
It is measured between 50% transition point of input
to output waveform.
PROPAGATION DELAY
Static power reduction
Subthreshold current can be reduced by increasing
the Vt.
Selective application of multiple threshold
Control Vt through the body voltage.
Static power reduction
Turn
OFF
power
supply
entirely.
MTCMOS circuit use low Vt transistor
for computation and high Vt transistor
as switch to disconnect the power
supply during ide mode.
Leakage
stack
effect
leakage
through 2 series OFF transistor is
much lower than a single transistor.
FAN-IN AND FAN-OUT
Fan-in:
Number of inputs.
The number of inputs to the gate.
gates with large fan-in are bigger
and slower
Fan-out:
Maximum number of similar gates
that a gate can drive.
Number of load gates connected
to the output of the driving gate.
gates with large fan-out are slower
Dynamic power reduction
Decrease activity factor
Selective clock gating
Drawback: if the system in transition rapidly from an idle mode to a fully
active mode, a large i/t spike will occur.
Decrease switching capacitance
Small transistors
Careful floor planning to reduce interconnect
Decrease power supply
Adjust voltage depending on the operating mode
Decrease operating frequency
WHY CMOS INVERTER DISSIPATES LESS
POWER THAN BIPOLAR INVERTER?
CMOS
BJT
PMOS and NMOs never conducting TTL cannot function without some
at the same time. So, there is little
current drawn at all the time due to
or no current drawn by the circuit
the biasing condition.
from power supply except for what
is necessary to source current to
load.
In static (unchanging) condition, it
BJT is current-controlled device.
dissipates zero power (ideally)Current is drawn all the time and
static power dissipation.
contribute to power dissipation.
CMOS gate draw transient current
during switching- dynamic power
dissipation.
CMOS is voltage-controlled device.
So, it draw less current compared to
BJT.
VOLTAGE TRANSFER
CHARACTERISTIC (VTC)
Recap
Typical VTC
Ideal VTC
TRANSISTOR SIZING
(W/L RATIO)
Minimum length permitted by the technology is usually used as
the length for all channels.
When designing static CMOS circuits, it is advisable to
balance the driving strength of the transistor by making the
width of PMOS two or three times than the width of NMOS.
Ideally:
TRANSISTOR SIZING
(W/L RATIO)
TRANSISTOR SIZING
(W/L RATIO)
Impact of process variation on VTC curve
The good transistor has:
smaller oxide thickness
smaller length
higher width
smaller threshold voltage
The bad transistor has:
larger oxide thickness
larger length
lower width
larger threshold voltage
Conclusion:
The variations cause a small shift in the
switching threshold, but that the operation
of the gate is not affected.
Process variations (mostly) cause a shift in
the switching threshold.
TRANSISTOR SIZING
(W/L RATIO)
IMPACT OF SUPPLY
VOLTAGE SCALING
o The
inverter
characteristic
can
still
be
obtained although the supply voltage is small
(not even large enough to turn the transistors
on.)
o How does this happen?
o Because of sub-threshold operation of
the transistors.
o The sub-threshold currents are sufficient
to switch the gate between low and high
levels, and provide enough gain to
produce acceptable VTCs.
o However, the very low value of the switching
currents will slow down the operation of the
VTC of CMOS inverter for different
supply voltages
transistor.