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Design of Ultra Low Power 1 Bit Full Adder Cell Using Advance GDI 6T Logic Style

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0% found this document useful (0 votes)
153 views5 pages

Design of Ultra Low Power 1 Bit Full Adder Cell Using Advance GDI 6T Logic Style

journal regarding adder

Uploaded by

Paramesh Waran
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Volume 6, Issue 3, March 2016 ISSN: 2277 128X

International Journal of Advanced Research in


Computer Science and Software Engineering
Research Paper
Available online at: www.ijarcsse.com
Design of Ultra Low Power 1 Bit Full Adder Cell Using Advance
GDI 6T Logic Style
Ruchi Gupta*, Atul Kumar Pathak, Gunakesh Sharma
ECE Department & RGPV University,
M.P., India

Abstract in this paper, we introduce a simple analytical model of full adder logic cell for estimating speed, area and
switching power dissipation in deep sub micron CMOS digital circuit. The main design objectives for these Advance
6T Full adder cell modules over the basic GDI full adder cell with 12 transistors are providing Low-Power dissipation,
high speed, less area with full-voltage swing without using extra elementary growth on design. In this design, we
employed with 6 transistors. The utilizes dynamic change in the width Length ratio with in order to get specified
results with process variation new 6T full adders with new methodology. This design is based on a different new
approach which eliminate of the need of extra gates for designing full adder cell; it provides high speed and Ultra
Low-Power, as well as a full voltage swing without any extra component required. Many of the previously reported
adders in literature suffered from the problems of extra elements required to full-fill the circuit recruitment like
voltage-swing and speed when operated at low supply voltages. This new designs successfully operate at ultra low
voltages. The studied circuits are optimized at 45nm and 90 nm PTM (Tanner). The comparison between these two
novel circuits in terms of Power, Delay

Keywords Propagation delay, Power consumption, Power-Delay-Product, Advance 6T Full Adder design, GDI
design style.

I. INTRODUCTION
The increasing demand for low power very large scale integration (VLSI) at different design level, such as
architectural, circuit, layout and the process technology At the circuit design level, considerable potential for power
saving by means of proper choice of a logic style for implementing digital circuit. Most of the operations based on
addition. With these operations we need to minimize the power consumption and increasing speed of the system without
further growth on the chip area, the low power requirement of VLSI system design have challenged the area of research
towards technology, architectural design and methodology solution to allow reduce power dissipation on CMOS Circuits.
Power dissipation influenced parameters are switching capacitance, transition activity and short circuit current in the
chosen logic style. Since the full adder cell is performing regularity in the CMOS functional units, improving the
performance of the 1-bit full adder is a major goal and has attracted much attention. A variety of full adders using
different architectural designs and technologies have been reported in literature [1] and they commonly aim to tradeoff
between power consumption and propagation delay. Adder performance affects the arithmetic system and functional
units such as multiplier ALU etc. An optimized design is required to prevent any reduction in the output signal, consume
less power, have less delay in critical path and be reliable even at low supply voltage as we scale towards nano-meter,
layout regularity, and interconnect complexity are also primary concern. By scaling down the feature size of devices in
nanometer, the supply voltage should be scaled down to avoid effects of hot carrier in CMOS circuitry. As a result,
transistor size and static power playing main role in nano-scale circuits for efficient power control [2].

II. LITERATURE REVIEW


In this section we are using GDI-MUX approach with new methodology by eliminating the need of complex XOR-
XNOR gates. Implementation of this Ultra Low- Power circuit using GDI technique [9] is discussed. The basic GDI cell
is shown in Fig. 2 while the Truth-Table is shown in Table 1. The GDI cell contains three inputs: G (common gate input
of NMOS and PMOS), P (input to the source/drain of PMOS) and N (input to the source/ drain of NMOS). Both NMOS
and PMOS are linked to Nor P, so it can arbitrarily be biased at contrast to a CMOS inverter. These features give the GDI
cell two extra input pins to use, which makes the GDI design more flexible than usual CMOS design. By considering the
full adders Truth-Table, it can be seen that Cout is equal to (A AND B) when Cin = 0, and Cout is equal to (A OR B)
when Cin = 1. Thus, a multiplexer can be used to obtain the Cout output. Following the same criteria, the SUM output
is equal to (A OR B OR Cin) when Cout = 0, and SUM is (A AND B AND Cin) when Cout = 1. Again, Cout can be
used to select the respective value for the required condition, driving a multiplexer. Hence, an alternative logic scheme to
design a full adder cell can be formed by AND, OR and MUX logic blocks In order to have an implementation of this
alternative logic scheme used.
2016, IJARCSSE All Rights Reserved Page | 794
Gupta et al., International Journal of Advanced Research in Computer Science and Software Engineering 6(3),
March - 2016, pp. 794-798

Fig. 1 Basic Gate-Diffusion Input (GDI) cell

GDI is suitable for designing fast, ultra Low-Power circuits, using less number of transistors while improving logic
level swing and energy dissipation. By providing small cell library its easy to improve W/L for transistor to transistor.
The proposed GDI-MUX full adder is shown in Fig. 2. To implement (A OR B), N input is connected to V dd, P is
connected to B and G is connected to A, hence as shown in Fig. 4, Module.1is GDI implementation of (A OR B). In the
next step (A AND B) is designed by connecting G, N and P to A, B and GND respectively. Module.2 in Fig. 2, illustrates
the implementation of (A AND B). For producing Cout, Cin is connected to G input of GDI as enable and N is connected
to (A OR B) and P is connected to (A AND B). Fig. 2 shows the implementation of multiplexer (module.3). Following
the same criteria, (A OR B OR Cin) is implemented in Module. 4 by connecting G input to (A OR B), P to Cin and N to
Vdd. Module.5 show (A AND B AND Cin) by connecting G input to (A AND B), P to GND and N to Cin. Finally in
order to produce the SUM, GDI is used as a multiplexer with its G input connected to C out and finally its P and N inputs
are linked to (A OR B OR Cin) and (A AND B AND Cin) respectively.
This novel design takes advantage of using GDI technique which is proved [9] as one of the effective structures in
designing Low-Power circuits. As stated in [9], this new approach minimizes both static and dynamic power
consumption. This design eliminates the leakage current and also providing good driving capability which is necessary in
a cascaded situation. This design also uses 12 transistors and has low dynamic power dissipation due to its low switching
capacitance.
Table: 1 Truth Table of Basic GDI cell

N P G OUT FUNCTION

0 B A AB F1

B 1 A A+B F2

1 B A A+B OR

B 0 A AB AND

C B A AB+AC MUX

0 1 A A NOT

Fig. 2 GDI-MUX Full Adder

This design uses 12 transistors with dynamic W/L of transistor. We are eliminating UPLD circuit from the design
and utilize the basic property of the CMOS transistor in this proposed methodology has low energy dissipation and speed
without extra circuitry use.

III. PROPOSED DESIGN


In this work, advance 6T full adder is modified to absolute the extra circuit from previous GDI design. Here we use
advance GDI cell without using multiplexer circuitry. We derive this design using three GDI basic cells with required

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Gupta et al., International Journal of Advanced Research in Computer Science and Software Engineering 6(3),
March - 2016, pp. 794-798
modification. The whole design depicted in fig. 3 in this figure we mansion three different cells that called modules. First
module give us the XOR function between A and input B as per normal GDI cell both P and N inputs are different but we
use same input with compliment of first input so that when ever input goes to 0 the output of cell goes to A and when
input B goes to 1 than our output goes to compliment of A that all input output condition give the output same as output
of XOR digital gate.
Table: 2 Truth Table of Advance GDI cell
FUN
N P G OUT CTIO
N

A A B A B XOR

A B (A B)B+(A B)C
C B MUX

Fig. 3 PROSOSE-6T Full Adder

Now we are able to see in table 2 who show the Advance GDI implementation in this implementation we design the
XOR digital output through basic GDI cell in second module we generate another XOR implementation with third input
C when output of first module goes to 0 than output of module two goes to C and when output of module 1 goes to 1
it is the input of module 2 than output of module 2 goes to complement of C the total output of module 2 are replicate the
SUM output of full adder cell that are the XOR of all three inputs (A XOR B XOR C).
The third module give the result of carry out of the full adder cell by using MUX function of GDI cell here our gate
input are XOR of A and B when ever this input goes to 0 the output f the module goes to B and when the input of this
GDI cell goes to 1 than output of the cell goes to C. the Boolean equation f the output of carry are
Cout = (A B) B + (A B) C
That is exactly equal to the conventional carry output of full adder cell. After this Advance GDI 6T Full Adder
design we are immerge the methodology of process variation with dynamic width length ration to improve the proper
charging and discharging of drain current, as we same maintains the threshold voltage to get appropriate result with full
voltage swing and minimum power dissipation with maximum speed of signal. Here we mainly improve the silica area of
design approximately 50% that is biggest achievement of any design.

IV. SIMULATION RESULTS AND ANALYSIS


In this section, the proposed 6T full adder cells shown in Fig. 3 is evaluated and compared to the ones chosen from
the literature is shown in fig. 2 both the circuits are implemented using Tanner EDA and extracted using 90nm and 45
nm PTM CMOS technology. Here we compare the results of both structural design methodologies with different
parameters like area, power and speed.
According to Simulation results we are able to measure power delay product (PDP) through Delay and Power
multiplication for GDI-MUX Full adder and ADVANCE-6T Full Adder. ADVANCE-6T provide better PDP, Voltage
Swing Compare to GDI-MUX Full Adder but the same time ADVANCE-6T not lacking on the Basis of Propagation

Fig. 4 Schematic Design of GDI-MUX Full Adder Fig. 7 Schematic Design of Advance 6T Full Adder

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Gupta et al., International Journal of Advanced Research in Computer Science and Software Engineering 6(3),
March - 2016, pp. 794-798

Fig. 5 Simulation Wave form of GDI-MUX Full Fig. 8 Simulation Wave form of Advance 6T Full
Adder at 90nm Adder at 90nm

Fig. 6 Simulation Wave form of GDI-MUX Full Fig. 9 Simulation Wave form of Advance 6T Full
Adder at 45nm Adder at 45nm

Table: 3 GDI-MUX and ADVANCE-6TResults at 90nm Table: 4 GDI_MUX and ADVANCE-6T Results at 45nm
POWER PDP DELAY PDP
DELAY VDD POWER VDD
DESIGN (X1006W (X10- DESIGN (X10- 06 (X10-
(X10-11S) 17 V 11 (X10 W) 17 V
) J) S) J)
GDI-MUX 2.080 0.386 0.802 0.7 GDI-MUX 1.787 0.360 0.643 0.7
ADVANCE ADVANCE-
1.815 0.192 0.348 0.7 1.012 0.141 0.142 0.7
-6T 6T

DELAY
Delay by the GDI-MUX full Adder technique. For each transition, the delay is measured from 50% of the input
voltage swing to 50% of the output voltage swing. It is apparent that among the existing full adders, the proposed full
adder cell has the smallest delay because of just having six transistors in the critical path for driving the output. The
ADVANCE-6T full adder follows the GDI-MUX adder in outperforming the other four full adder cells in delay. Propose
full adder in shows the least delay because of removing a extra elementary design to produce internal signals, which is
based on Gate Diffusion Input transistor logic.

POWER
The proposed 6T full adder shows the best performance among the above mentioned full adders under varying
supply voltages. The ADVANCE-6T full adder utilizes ADVANCE-6T structure as its main cell which is proved in to be
one of the lowest power consumer cells that not only is suitable for designing fast, Low- Power circuits but also improves

2016, IJARCSSE All Rights Reserved Page | 797


Gupta et al., International Journal of Advanced Research in Computer Science and Software Engineering 6(3),
March - 2016, pp. 794-798
logic level swing and static power characteristics. GDI-MUX full adder cell follows ADVANCE-6T full adder in
outperforming the other full adder cells in power consumption. The GDI full adder cell consume slow static power due to
removal of any direct path between Vdd and the ground by employing NMOSs and PMOSs in a complementary manner.
The ADVANCE-6T full adder shows minimum power consumption at all supply voltages when compared to the GDI-6T
full adder.

POWER-DELAY-PRODUCT (PDP)
The PDP is a quantitative measure of the efficiency and a compromise between power dissipation and speed. PDP is
particularly important when low power operation is needed. The Power-Delay- Product for GDI-MUX full adder in two
full adder cells is evaluated under different supply voltages (0.81.4V) in 90nm and (0.61.2V in 45nm. Illustrate the
values of PDP of the 1-bit adder based on each full adder cells. Tables 3 and 4 illustrate the values at 0.7V for 90 nm and
0.7 for 45nm. As shown the ADVANCE-6T full adder has the best PDP in comparison with its counterpart.

V. CONCLUSION
In this paper two novel full adder cells using ADVANCE-6T structure and GDI-MUX CMOS logic style for Low-
Power application are proposed. These new design successfully operate at low voltages with tremendous signal integrity
and driving capability. The circuits being studied are optimized for energy efficiency at 90nm and 45nm PD SOI CMOS
process technology. Simulations have been performed on PTM to evaluate the new designs. GDI-6T full adder in and. A
broad comparison to the state of the art designs cited in the VLSI literature illustrates a significant improvement in terms
of power dissipation and Power- Delay product (PDP) parameter. The number of transistors used is significantly reduced
resulting in a great reduction in switching activity and area. This considerable reduction in power by minimizing static
and dynamic power dissipation as well as some techniques to enhance the speed of the design leads to the best PDP.

ACKNOWLEDGMENT
The heading of the Acknowledgment section and the References section must not be numbered.Causal Productions
wishes to acknowledge Michael Shell and other contributors for developing and maintaining the IEEE LaTeX style files
which have been used in the preparation of this template. To see the list of contributors, please refer to the top of file
IEEETran.cls in the IEEE LaTeX distribution.

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2016, IJARCSSE All Rights Reserved Page | 798

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