PA2423L

2.4 GHz Bluetooth Class 1 Power Amplifier IC

Preliminary Information

Applications Product Description

Bluetoothtm Class 1 A monolithic, high-efficiency, silicon-germanium

USB Dongles power amplifier IC, the PA2423L is designed for
Laptops class 1 Bluetoothtm 2.4 GHz radio applications. It
delivers +22.5 dBm output power with 45%
Access Points power-added efficiency – making it capable of
Cordless Piconets overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
tm
class 1 Bluetooth applications.

Features The amplifier features:

+22.5dBm at 45% Power Added Efficiency an analog control input for improving PAE at
reduced output power levels;
Low current 80mA typical @ Pout=+20 dBm
a digital control input for controlling power up
Temperature stability better than 1dB and power down modes of operation.
Power-control and Power-down modes
Single 3.3 V Supply Operation An on-chip ramping circuit provides the turn-
Temperature rating: -40C to +85C on/off switching of amplifier output with less than
Very small plastic package - 6 lead LPCC 3dB overshoot, meeting the Bluetoothtm
(1.6mm x 3.0mm) specification 1.1.

The PA2423L operates at 3.3V DC. At typical

output power level (+22.5 dBm), its current
consumption is 125 mA.
Ordering Information
The silicon/silicon-germanium structure of the
PA2423L – and its exposed-die-pad package,
Shipping soldered to the system PCB – provide high
Type Package
Method thermal conductivity and a subsequently low
junction temperature. This device is capable of
PA2423L 6 - LPCC Tape and reel operating at a duty cycle of 100 percent.
Tubes -samples
PA2423L-EV Evaluation kit

Functional Block Diagram

V CTL V CC0 V RAMP

Ramp
Bias Generator
Circuitry

IN Interstage
Stage 1 Stage 2
Match OUT/ V CC2

GND V CC1 GND

DOC# 05PDS002 Rev 4 07/26/2001 Page 1 of 11

 PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

Pin Out Diagram

TOP VIEW BOTTOM VIEW

1 6 6
6
SiGe 1

2
2423L 5 5 Die 2

3 4 4 3

Pin Out Description

Pin No. Name Description

Controls the output level of the power amplifier. An analog control signal between
1 VCTL
0V and Vcc varies the PA output power between minimum and maximum values
Enable/Disable the power amplifier. A digital control signal with Vcc logic high
2 VRAMP
(power up) and 0V logic low (power down) is used to turn the device on and off.
Power amplifier RF input, external input matching network with DC blocking is
3 IN
required
4 VCCO Bias supply voltage

5 VCC1 Stage 1 collector supply voltage, external inter-stage matching network is required
PA Output and Stage2 collector supply voltage, external output matching network
6 OUT/VCC2
with DC blocking is required
Die Pad GND Heatslug Die Pad is ground

DOC# 05PDS002 Rev 4 07/26/2001 Page 2 of 11

 PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

Absolute Maximum Ratings

Symbol Parameter Min. Max. Unit

VCC Supply Voltage -0.3 +3.6 V

VCTL Control Voltage -0.3 VCC V

VRAMP Ramping Voltage -0.3 VCC V

IN RF Input Power +8 dBm

TA Operating Temperature Range -40 +85 °C

TSTG Storage Temperature Range -40 +150 °C

Tj Maximum Junction Temperature +150 °C

Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This
device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling
and assembly of this device should be at ESD protected workstations.

DC Electrical Characteristics

Conditions: VCC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2dBm,TA =25°C, f = 2.45GHz,
Input and Output externally matched to 50Ω ,unless otherwise noted.

Symbol Note Parameter Min. Typ. Max. Unit

VCC Supply Voltage 3 3.3 3.6 V

ICC 1 Supply Current (ICC = IVCC0 + IVCC1 +I VCC2), VCTL = 3.3V 125 150 mA

Supply Current variation over temperature from TA = 25°C

∆Icctemp 3 25 %
(-40°C <TA <+85°C)

VCTL PA Output Power Control Voltage Range 0 VCC V

ICTL 1 Current sourced by VCTL Pin 200 250 µA

3 Logic High Voltage 2.0 V
VRAMP
3 Logic Low Voltage 0.8 V

Istdby 1 Leakage Current when Vramp = 0V, Vctl = high 0.5 10 µA

DOC# 05PDS002 Rev 4 07/26/2001 Page 3 of 11

 PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

AC Electrical Characteristics

Conditions: VCC0 = VCC1 = VCC2 = VRAMP =3.3V, VCTL = 3.3V, PIN =+2 dBm, TA =25°C, f =2.45 GHz,
Input and Output externally matched to 50Ω, unless otherwise noted.

Symbol Note Parameter Min. Typ. Max. Unit

fL-U 3 Frequency Range 2400 2500 MHz

1 Output Power @ PIN =+2 dBm, VCTL = 3.3V 20 22.5 23.5 dBm
Pout
1 Output Power @ PIN =+2 dBm, VCTL =0.4V -20 0 dBm

Output Power variation over temperature (-40°C <TA

∆Ptemp 3 1 2 dB
<+85°C)

dPOUT /dVCTL 3 Control Voltage Sensitivity 120 dBm/V

PAE Power Added Efficiency at +22.5 dBm Output Power 45 %

GVAR 3 Gain Variation over band (2400-2500 MHz) 0.7 1.0 dB

2f, 3f, 4f, 5f 3.4 Harmonics -40 -35 dBc

IS21 IOFF 2 Isolation in “OFF” State, PIN = +2dBm, VRAMP = 0V 15 20 dB

IS12I 2 Reverse Isolation 32 42 dB

All non-harmonically related

STAB 2 Stability (PIN = +2dBm, Load VSWR = 6:1)
outputs less than -50 dBc

Notes: (1) Guaranteed by production test at TA =25°C.

(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.

Typical Performance Characteristics

Test Conditions: SiGe PA2423L-EV: VCC0=VCC1=VCC2=VRAMP=3.3V, VCTL = 3.3V, PIN = +2 dBm, TA = 25°C, f
= 2.45GHz, Input and Output externally matched to 50Ω, unless otherwise noted.

Pout, Icc vs Supply Voltage Output Power, Gain vs Input Power

24 150

23 142

25 30.00
Supply current

22 134
Output Power

Output Power (dBm)

21 126
20 25.00
(dBm)

20 118
(mA)

Gain (dB)

19 110
15 20.00
18 102

17 94 10 15.00

16 86

15 78 5 10.00

14 70
2.4 2.6 2.8 3 3.2 3.4 3.6 0 5.00

Vcc(V) -28 -24 -20 -16 -12 -8 -4 0 4 8

Pout Icc Pout Input Power (dBm)

Gain

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 PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

PAE vs Input Power Pout vs Frequency

50

45
Output Power (dBm)
23. 0
40
22. 5
35
PAE (%)

22. 0
30
21. 5
25
21. 0
20
20. 5
15
20. 0
10
19. 5
5
19. 0
0
18. 5
-28 -24 -20 -16 -12 -8 -4 0 4 8
18. 0
Input Power(dBm) 2. 2 2. 3 2. 4 2. 5 2. 6 2. 7

Frequency (GHz)

DOC# 05PDS002 Rev 4 07/26/2001 Page 5 of 11

 PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

Output Power vs Control Voltage

Supply Current vs. Control

Voltage 25

Output Power dBm)

20
140
15

120 10
Supply Current

5
100 0

-5
(mA)

80
-10

-15
60
-20

40 -25
0.4 0.9 1.4 1.9 2.4 2.9 3.4

20
Vctl(V)
0
0.4 0.9 1.4 1.9 2.4 2.9 3.4
Pin=-4dBm Pin=0dBm
Vctl(V) Pin=+2dBm
Pin=-4dBm Pin=0dBm
Pin=+2dBm

Icc vs Frequency Harmonic Output Spectrum

30
RFout power (dBm)

140
25
Supply Current (mA)

130 20
15
120 10
5
110 0
-5
100 -10
-15
90 -20
-25
80 -30
-35
70 -40
-45
60 -50
2.3 2.3 2.4 2.4 2.5 2.5 2.6 2.6 2.7 1 2 3 4 5 6 7 8 9 10 11 12 13

Frequency (GHz)
Frequency (GHz)

DOC# 05PDS002 Rev 4 07/26/2001 Page 6 of 11

 PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

PA output spectrum with BT modulated signal

30

20
RF Output Power (dBm) into 50R

10

-10

-20

-30

-40

-50

-60
2.4475 2.4485 2.4495 2.4505 2.4515 2.4525
Frequency (GHz)

DOC# 05PDS002 Rev 4 07/26/2001 Page 7 of 11

 PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

Package Dimensions

The PA2423L is packaged in a 1.6 mm x 3.0 mm 6 lead LPCC package. The underside of the package is an exposed die-pad structure. This allows for
direct soldering to the PCB for enhanced thermal conductivity. The package dimensions are shown in the drawing below.

DOC# 05PDS002 Rev 4 07/26/2001 Page 8 of 11

 PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

LPCC 6 PCB Footprint Layout

Applications Information

For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423L. The order
part number for the evaluation board is PA2423L-EV. The evaluation board is intended to simplify the
testing with respect to RF performance of this power amplifier.

The application note, 05AN006 provides the supporting information for using the evaluation board. It
contains information on the schematic, bill of materials and recommended layout for the power amplifier and
the input and output matching networks. To assist in the design process, this layout is available, upon
request, in gerber file format.

Using VRAMP
VRAMP is a digital pin used to power-up and power-down the PA2423L in Time Duplex systems such as
Bluetoothtm 1.1. During receive mode, VRAMP voltage is pulled down, PA2423L acts as a 25 dB isolation block
between the radio and the antenna while consuming a modest 1uA. In transmit mode, VRAMP voltage is
pulled to VCC and PA2423L offers 19 dB to 21dB of large signal gain. The rise and fall time are in the order
of 1-2usec.

DOC# 05PDS002 Rev 4 07/26/2001 Page 9 of 11

 PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

Using VCTL
VCTL is an analog pin that is designed to control the gain of PA2423L. Applying a voltage between 0V and
Vcc will adjust the gain between -15dB and 21 dB. Used in combination with a variable drive level to
PA2423L, the VCTL function can greatly optimize the PAE of the system at all four Bluetoothtm transmitted
power levels.

By applying approximately 1.4V to VCTL, for example, a Class1 radio can be modified to a Class2 radio with
the PA2423L consuming only 15mA.

By implementing a resistor DAC, the VCTL pin can interface with Bluetoothtm transceivers offering digital and
programmable outputs.

DOC# 05PDS002 Rev 4 07/26/2001 Page 10 of 11

 PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information

http://www.sige.com

Headquarters: Canada

Phone: +1 613 820 9244

Fax: +1 613 820 4933

2680 Queensview Drive

Ottawa ON K2B 8J9 Canada

sales@sige.com

U.S.A. United Kingdom

19925 Stevens Creek Blvd. 1010 Cambourne Business Park

Suite 135 Cambourne
Cupertino, CA 95014-2358 Cambridge CB3 6DP

Phone: +1 408 973 7835 Phone: +44 1223 598 444

Fax: +1 408 973 7235 Fax: +44 1223 598 035

Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc.
assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any
infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by
implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and
replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in
implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc.

The Bluetooth trademarks are owned by Bluetooth SIG Inc., USA.

Copyright 2001 SiGe Semiconductor

All Rights Reserved

DOC# 05PDS002 Rev 4 07/26/2001 Page 11 of 11

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