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Silicon N-Channel MOS FET: Application

This document provides specifications for the 2SK1341 silicon N-channel MOS FET. It can be used for high-speed power switching applications. Key features include low on-resistance, high-speed switching, and the ability to withstand high drain currents and voltages without secondary breakdown. Electrical characteristics include maximum drain-source voltage of 900V, on-resistance of 2.0-3.0 ohms, and turn-on/off delay times of 20/125 nanoseconds.

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Marco Frigerio
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101 views3 pages

Silicon N-Channel MOS FET: Application

This document provides specifications for the 2SK1341 silicon N-channel MOS FET. It can be used for high-speed power switching applications. Key features include low on-resistance, high-speed switching, and the ability to withstand high drain currents and voltages without secondary breakdown. Electrical characteristics include maximum drain-source voltage of 900V, on-resistance of 2.0-3.0 ohms, and turn-on/off delay times of 20/125 nanoseconds.

Uploaded by

Marco Frigerio
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2SK1341

Silicon N-Channel MOS FET

Application

High speed power switching

Features

Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter

Outline

TO-3P

G 1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
2SK1341
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 900 V
Gate to source voltage VGSS 30 V
Drain current ID 6 A
1
Drain peak current I D(pulse)* 15 A
Body to drain diode reverse drain current I DR 6 A
2
Channel dissipation Pch* 100 W
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at TC = 25C

2
2SK1341

Electrical Characteristics (Ta = 25C)


Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown V(BR)DSS 900 V I D = 10 mA, VGS = 0
voltage
Gate to source breakdown V(BR)GSS 30 V I G = 100 A, VDS = 0
voltage
Gate to source leak current I GSS 10 A VGS = 25 V, VDS = 0
Zero gate voltage drain current I DSS 250 A VDS = 720 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 3.0 V I D = 1 mA, VDS = 10 V
Static drain to source on state RDS(on) 2.0 3.0 I D = 3 A, VGS = 10 V *1
resistance
Forward transfer admittance |yfs| 2.3 3.7 S I D = 3 A, VDS = 20 V *1
Input capacitance Ciss 980 pF VDS = 10 V, VGS = 0,
Output capacitance Coss 400 pF f = 1 MHz
Reverse transfer capacitance Crss 195 pF
Turn-on delay time t d(on) 20 ns I D = 3 A, VGS = 10 V,
Rise time tr 80 ns RL = 10
Turn-off delay time t d(off) 125 ns
Fall time tf 100 ns
Body to drain diode forward VDF 0.9 V I F = 6 A, VGS = 0
voltage
Body to drain diode reverse t rr 1000 ns I F = 6 A, VGS = 0,
recovery time diF/dt = 100 A/s
Note: 1. Pulse test

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