CCVT Transient Behavior Analysis
CCVT Transient Behavior Analysis
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622                                                                  IEEE Transactions on Power Delivery, Vol. 13, No. 2, April 1998
                                     I~E-DO~~IN                                                              IENT
      BE                             COUPLING C                                                              SFORMER
          M.R. Iravani, X. Wang                     I. Polishchuk, J. Ribeiro                       A. Sarshar
          Department of Electrical and                       Haefely-Trench                        Haefely-Trench
            Computer Engineering                           390 Midwest Road                      71 Maybrook Drive
             University of Toronto                        Scarborough, Ontario                  Scarborough, Ontario
               Toronto, Ontario                             Canada M1P 3B5                        Canada M1V 4B6
              Canada M5S 364
   Abstract-This paper reports a set of digital time-domain            systems. The model is developed based on the use of the
simulation studies conducted on TEHMPl61A Coupling                     EMTP. The objectives of this joint project are:
Capacitor Voltage Transformer (CCVT) of Haefely-Trench. The
Electro-Magnetic Transients Program (EMTP) is used to develop                 To evaluate, compare and quantify impacts of CCVT
the CCVT model and conduct the transient studies. The accuracy                component parameters and protectivelsuppressive
of the CCVT model is verified through comparison of the EMTP                  devices on its transient response, e.g. the
simulation results with those obtained from test results. The                 phenomenon of ferroresonance.
investigations demonstrate that the developed model can
accurately predict CCVT transient response, e.g. the phenomenon
of ferroresonance. The model is developed (1) to determine
                                                                         0    To predict and quantify impact of CCVT transient
impact of transients on CCVT response, (2) to design, optimize                behaviour on protection systems.
and compare protective and ferroresonance suppressor devices of
CCVT, and (3) to predict CCVT transient response on power                e    To investigate impact of power system transients,
system monitoring and protection schemes.                                     e.g. faults and plannedunplanned switching
                                                                              incidents, on CCVT transient behaviour.
   Keywords: CCVT, Ferroresonance, Simulation, EMTP,
Protection, Relaying.                                                     Salient feature of the developed model as compared with
                                                                       the reported models [4,5,6,7,8] is that it represents details
                     1. INTRODUCTION                                   of (1) CCVT step-down transformer including its
                                                                       saturation characteristic and tap positions, (2) CCVT series
   CCVT is a well known apparatus to transform high-                   reactor including its tap positions, (3) CCVT protective
voltage (input) to low-voltage levels (output) at which                devices, (4) ferroresonance suppressor circuitry, and ( 5 )
monitoring devices and protection relays operate.                      various burden models. Due to space limitation, this paper
Theoretically, the output waveform should be an exact                  only reports some of the studies conducted on
replica of the input waveform under all operating                      TEHMP161A CCVT model of Haefely-Trench and
conditions.      Under steady-state conditions, this                   highlights the conclusions.
requirement can be satisfied based upon proper design and
tuning of the CCVT. However, under transient conditions,                  The rest of this paper is organized as follows. Section 2
e.g. faults and switching incidents, the CCVT output                   introduces TEHMP161A CCVT system used for the
waveform may deviate from the input waveform due to the                reported studies. Section 3 reports the results of the
impacts of capacitive, inductive and nonlinear components              frequency-domain studies carried out on the CCVT system.
of the CCVT [1,2]. Therefore, fidelity of CCVT during                  Section 4 compares the EMTP simulation results with the
transients must be well known and quantified [3]. The                  test results and verifies the accuracy of the developed
other concern is thermal overstress and consequently                   model. Section 5 reports the CCVT response to various
deterioration of CCVT components due to its internal                   simulated transient scenarios.            Conclusions are
transient phenomena, e.g. the phenomenon of                            summarized in Section 6.
ferroresonance.
                                                                                 2. TEHMP161A CCVT CIRCUITRY
   To address the above issues, the Instrument Transformer
 Division (ITD)of Haefely-Trench and the University of                    Figure 1 shows schematic diagram of the CCVT
 Toronto have embarked upon development of a                           circuitry. Switches S1, S2, S3 and S4 are not part of the
 comprehensive digital time-domain model of CCVT                       CCVT circuitry, and included in the EMTP model to
                                                                       simulate various transient scenarios imposed on the CCVT.
                                                                       Major CCVT components of Fig. 1 are: voltage divider C1
 PE-479-PWRD-0-01-1997 A paper recommended and           approved      and C2, drain coil Ld, step-down transformer (SDT), series
 by the IEEE Transmisslon and Distribution Committee of  the IEEE
 Power Engineering Society for pubhcatlon in the IEEE Transactions     reactor, harmonic suppression filter, protective device, and
 on Power Delivery. Manuscript submitted July 31, 1996; made           burden.     Capacitors Cm, Ct and Cc are lumped
 available for printing January 8, 1997.                               representations of stray capacitances of STD and series
                                                                       reactor. STD and series reactor have multiple tap positions
                                                                       which are not identified on Fig. 1, but have been included
                                                                       in the EMTP model. Various protective devices examined
                                                                       for the CCVT system of Fig. 1 are: MOV, triac and spark-
                                                                       gap. The EMTP provides basic functions and component
                                                                       models to construct required models of the above protective
                                                                                                           E -70
                                                                                                           -
                                                                                                           c
                                                                                                                -75
                                                                                                                          t
                                                                                                                               1:Lc=38   H
                                                                                                                               2:Lc=40 H
                                                                                         -I
                                                                                         -5
                                                                                                                               3:Lc=42H               3i
                                                                                                                -80
                                                                                                                -90
                                                                                                                   400            450        500    550     600        650    700
       (1) Rotective Device (2) Harmonic Suppression Filter (3) Burden                                                                         Frequency (Hz)
 Fig. 1            Schematic diagram of a TEHMP161A Haefely-                                            Fig. 3        Effect of net series reactance 6,)                 on CCVT
                   Trench CCVT.                                                                                       frequency response.
                                                                                                                      r
devices. Typical data for the CCVT of Fig. 1 is given in
Appendix A.
         3. FREQUENCY-DOMAIN SENSITIVITY
                    ANALYSIS
   A set of frequency-domain studies [5, 71 are conducted
                                                                                                         z-
                                                                                                         U
                                                                                                         =            .
                                                                                                         Y
                                                                                                                              3:Ct=700 pF
is helpful (1) to determine appropriate CCVT component                                                         -a0    -       4: ct=i400 PF
characteristics for EMTP studies, and (2) to verify the
EM simulation results, e.g. to correlate simulation and
measurement results. Figures 2 to 7 show a set of
frequency domain study results.
                                                                                                               -90
                                                                                                                                                            I                j
                                                                                                                 10                         1o2            1@               1o4
   Figure 2 shows that the CCVT frequency response (20                                                                                         Frequency (Hz)
log (uz/u1)) is significantly affected by Ld at frequencies                                                Fig. 4             Effect of Ct on CCVT frequency response.
higher than 600-Hz. Figure 3 shows that the frequency                                                          -55    I
response is not very sensitive to changes of the inductance
(Lc) of the series reactor. The studies also show that the                                                     -60
frequency response is not sensitive to variations of STD
                                                                                                               -65
leakage inductance.
-85
              /
                                                                                                                 400                 500            600          700         800
 a
 o_                                                                                                                                            Frequency (Hz)
  -
  C
  tu                                                                                                       Fig. 5             Effect of Cc on CCVT frequency response.
                                                                                                        Sensitivity studies show that variation of mutual stray
                   2: With Drain Coil                                                                   capacitance Cm, from 0.0 pF to 220 pF, does not influence
       -80   1                                                                                          the CCVT frequency response. Figure 5 shows that the
                                                                                                        notch frequency illustrated in the frequency response is
              1                                                                                    I    noticeably affected by the stray capacitance (C,) of the
             10                   1oz            10                                             10
                                                                                                        series reactor. Figure 6 indicates that VA of burden does
                                     Frequency (Hz)
                                                                                                        not have any noticeable influence on the frequency
     Fig. 2         Effect of Ld on CCVT frequency response.                                            response. To the contrary, Fig. 7 shows that power-factor
624
       -50    1                                           n              s4                     C                           STD                  SI
                   pf = 0.8 lagging
                                            n
  .c
   m
  (j- / U '
              I                                      \I
                   1:burden=l200 VA
                   2:burden=800 VA
                   3:burden=400 VA
       -80    -    4:burden=200 VA
              I                                           -.I
             IO'                1oz            1o3        10'
                                  Frequency (Hz)                                        Fig. 8 CCVT test set-up.
                                                                       Figure 10 compares the EMTP simulation and test
  Fig. 6           Effect of burden VA on CCVT frequency            results corresponding to ferroresonance test (secondary
                   response.
                                                                    short-circuit test). Initially S1 (Fig. 8) is open. The STD
                                                          n         secondary side is subjected to a short-circuit by closing S1
                                                                    and considering a burden with zero resistance (for the
                                 burden=400 VA
                                                                                                             --0
                                                                                                                 -/--            /   '
                                                                                                                                         /
                                                                                                                                             TIME(S)
                                                                                                                                                 1'
  operating condition. Note that for the sake of clarity, the
  simulated response has been enlarged. Figure 9 shows that                                                        0  0.006     ,0.003
  the pattern of oscillatory transients and frequency of            Fig. 9    CCVT recorded (a) and simulated (b) output
  oscillations depicted in the simulation and test results                    voItage corresponding to transient response test.
  closely agree.
                                                                                                                          625
           I
      1                                                                                     A
TIMUS)
           I          I       I     1         I        1        -300   ;      I         I        I          I
                                                                                                                     I
           0         0.1      02   03        0.4       05              0     a1        0.2       03        0.4      0.5
Fig. 10 C O T  recorded (a) and simulated (b) output          Fig. 11 CCVT recorded (a) and simulated (b) output
        voltage corresponding to fenoresonance test (S1                voltage corresponding to fenoresonance test (S 1
        opens at voltage zero-crossing).                                opens at peak voltage).
      CCVT transient response.                                 voltage component at the CCVT output. These oscillations
                                                               are due to energy exchange between capacitive voltage
       To determine impact of power system transients          divider and Ld. The frequency of this oscillatory mode is
       (e.g., faults and capacitor energization) on the
       fidelity of CCVT response.                              defined by the natural frequency of the loop formed by C1,
                                                               C2, and Ld (13.956-kHz). In practice, the net resistance
       To determine impact of burden characteristics on the    associated with C1, C2 and particularly Ld limits the peak
       CCVT transient behaviour.                               value and dampens this oscillatory mode. This indicates
                                                               that accurate Q-factor of the drain coil must be represented
       To investigate impacts of CCVT transient response       in the EMTP model when the impact of system transient
       on digital relaying/protection systems.                 are investigated.
       To modifykhange CCVT design to meet particular             Figure 12(c) shows the CCVT transient response to the
       operating requirements and achieve desirable            same switching scenario when the drain coil is not
       transient response.                                     included in the CCVT system. The high-frequency mode
                                                               in Fig. 12(c) is due to the presence of stray capacitance
                   5. EMTP STUDY RESULTS                       Cm. Comparison between Figs. 12(b) and 12(c) illustrates
   Due to space limitation, only the simulation results        sensitivity of the CCVT transient response to the
corresponding to system fault and secondary-winding         inductance of the drain coil.
short-circuit study cases conducted on the TEHMP161A
CCVT of Figure 1 are reported in this paper. We intend to         Figure 12(d) shows the CCVT transient response when
report a comprehensive set of results in a subsequent paper.   the protective block of the CCVT (Fig. 1) is represented by
                                                               a spark gap system. As compared with Figs. 12(b) and
5.1            System Fault                                    12(c), Fig. 12(d) shows that the maximum encountered
                                                               voltage is limited by the spark gap protective level.
  T h e CCYT rmponse to a temporary, dose-in, line-to-
ground fault is simulated by a close-open operation of            Figure 12(e) shows the CCVT transient response to the
switch S3, Fig. 1 (initially S4 and S1 are closed and S2 is    same switching scenario when the drain coil (Ld) and the
open). Figure 12(a) shows the CCVT input voltage.              mutual stray capacitance (C,) are not included in the
                                                               model. Comparison of Fig. 12(b) and 12(c) with Fig. 12(e)
   Figure 12(b) shows the CCVT response (output voltage)       reveals that the high-frequency oscillations are due to the
to the fault. Closure of S 3 resuIts i n a high-frequency      presence of Ld and c,. Therefore, (1) proper design to
626
             x IOS                                                       x    io5
                                                                    2
                                                                    0
                                                                         ,.   .......     ...             ........ ...         . . . . .,
         -0
                                                                                                .I\.
                           ,       a)                                                            ,a)
       -3                                                          -2 L                                                                1
                          0.05                 0.1   0.15                0          0.1         0.2          0.3         0.4          0.5
      5000                                                        500
0 0
      -500
             0
                            ,
                          0.05
                                   d)
                                               0.1   0.15
                                                                 -500
                                                                     0
                                                                         1
                                                                         0          0.1
                                                                                            ir  Yd)
                                                                                                0.2          0.3         0.4           0.5
                               ,   e)
                                                                     "
             0            0.05                 0.1   0.15                0          0.1         0.2      0.3             0.4           0.5
                                        Time (S)                                                  Time (S)
 Fig. 12 CCVT transient response to closure and opening         Fig. 13 CCVT transient response to closure and opening
         of Switch S3 of Fig. 1.                                          of Switch S2 of Fig. 1.
         (a) input voltage                                                (a) input voltage
         (b) output voltage (with Ld, with c,, without                    (b) output voltage (no burden (VA=O))
               protective device)                                         (c) output voltage (with protective device,
         (c) output voltage (without Ld, with c,, without                      burden: 400-VA, pf=O.S)
                                                                          (d) output voltage (with kIOV protective device,
               protective device)                                              burden: 400-VA, pf=O.8)
         (d) output voltage (without Ld, with C,      with                (e) MOV absorbed energy corresponding to case
               protective device)                                              (d) above.
         (b) output voltage (without Ld, without c,,            effectively damped out.
               without protective device)
 minimize C, and ( 2 ) proper selection of Q-factor of Ld,         Figure 13(d) shows the CCVT response to the same
 can practically eliminate the high-frequency component         transient when the protective device is represented by an
 shown in Fig. 12.                                              MOV element in the CCVT system. Figure 13(d) shows
                                                                that presence of MOV can effectively mitigate the
 5.2             Secondary W&zd&g XhoTt-C&euk                   phenomenon          of ferroresonance              Fig   13(e) shows the
                                                                energy absorbed by the MOV element as a result of the
    Figure 13 shows the CCVT ferroresonance response to a       short-circuit.
 temporary short-circuit at the secondary (burden) side of
 SDT. The short-circuit is imposed by closing S2 at peak                                  6. CONCLUSIONS
 voltage and then opening S2 after 10 cycles. Figures 13(a)
 and 13(b) show the CCVT input voltage and output                  This paper presents the results of digital time-domain
 voltage. Figure 13(b) shows that the switching process         and frequency-domain studies conducted on TEHMPl61A
 results in subharmonic ferroresonance.                         CCVT of Haefely-Trench.           The Electro-Magnetic
                                                                Transients Program (EMTP) is used for digital time-
    Figure 13(c) shows the CCVT response to the short-          domain simulation of the CCVT transient response.
 circuit when the protective device is represented by a spark   Comparison of the EMTP results with those of test results
 gap and the CCVT burden is 400-VA. Figure 13(c)                verifies the accuracy of the EMTP model of the CCVT.
 illustrates that the ferroresonance phenomenon is              The investigations conclude that:
                                                                                                                                                    627
     Time-domain and frequency-domain analyses of
     CCVT provide complementary information to
     accurately predict steady-state and transient
     behaviour of CCVT system, and to properly
     desigdtune its protective and suppressor devices.
M.R. Iravani (University of Toronto):                      5. Configuration of Fig. 1 of the paper was used
The authors would like to thank the discusser for his      for transient tests reported in the paper. The
interest in the paper. The following comments are in       frequency response provided by the discusser
response to the questions and comments of the              indicates that the first notch appears slightly above
discusser.                                                 600 Hz corresponding to CC = 1500 pF. This is
1. We are not aware of any reported case where             consistent with our results of Fig. 5. At CC= 1500 pF,
CCVT frequency response has impacted control loops         the first notch based on our studies appears at 640 Hz.
of power electronic based apparatus. However, it is        Our studies indicate that the first notch exists
required that the CCVT ferroresonance to be damped         regardless of the magnitude of CC, Figs. 2 to 6. The
out rapidly (e.g. 2 cycles) when it is used for voltage    only case where we can eliminated the first notch is
measurement at SVC terminals.                              when the burden is adjusted at the rated value (400-
2. The discusser is correct in stating that the unit for   VA) and pf = 0.6. There is no particular pattern for
current in the STD saturation data is mA and not A.        variation of CCVT parameters as the rated voltage
3. Each frequency-response plot in the paper is            increases to 500-kV.
simply the ratio of output voltage to the input voltage    7. Currently we are conducting some studies to
in (db).                                                   identify sensitivity of CCVT transient response to
4. The following table provides saturation                 various parameters. We intend to verify our
characteristic of the suppression filter.                  conclusions and simulation results based on
                                                           comparison with test results.
           Current (A)      Flux(V S)
           0.0494 13        0.27000
                                                           Manuscript received October 1, 1997.
           0.358222         0.3 1886
           0.980298         0.33762
           2.538552         0.35637
           10.000000        0.40000