20-W Stereo Class-D Audio Power Amplifier: Features Applications
20-W Stereo Class-D Audio Power Amplifier: Features Applications
QFN HTQFP
1FEATURES APPLICATIONS
• 20-W/ch into an 8-Ω Load From a 18-V Supply • Televisions
• 10-W/ch into an 8-Ω Load From a 12-V Supply
• 15-W/ch into an 4-Ω Load From a 12-V Supply
DESCRIPTION
• Operates from 10 V to 26 V The TPA3100D2 is a 20-W (per channel) efficient,
Class-D audio power amplifier for driving bridged-tied
• 92% Efficient Class-D Operation Eliminates stereo speakers. The TPA3100D2 can drive stereo
Need for Heat Sinks speakers as low as 4 Ω. The high efficiency of the
• Four Selectable, Fixed Gain Settings TPA3100D2, 92%, eliminates the need for an
• Differential Inputs external heat sink when playing music.
• Thermal and Short-Circuit Protection With The gain of the amplifier is controlled by two gain
Auto Recovery Feature select pins. The gain selections are 20, 26, 32,
36 dB.
• Clock Output for Synchronization With
Multiple Class-D Devices The outputs are fully protected against shorts to
• Surface Mount 7 mm × 7 mm, 48-pin QFN GND, VCC, and output-to-output shorts with an auto
Package recovery feature and monitor output.
• Surface Mount 9 mm × 9 mm, 48-pin HTQFP
Package
MSTR/SLV BSLN
Sync Control 0.22 mF
SYNC LOUTN
LOUTP
Fault Flag FAULT
PVCCR BSLP
0.22 mF
10 V to 26 V PVCCL VCLAMPL
AVCC 1 mF
PGNDL
AGND
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Copyright © 2005–2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TPA3100D2
SLOS469F – OCTOBER 2005 – REVISED AUGUST 2010 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operations of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The TPA3100D2 incorporates an exposed thermal pad on the underside of the chip. This acts as a heatsink, and it must be connected
to a thermally dissipating plane for proper power dissipation. Failure to do so may result in the device going into thermal protection
shutdown. See TI Technical Briefs SCBA017D and SLUA271 for more information about using the QFN thermal pad. See TI Technical
Briefs SLMA002 for more information about using the HTQFP thermal pad.
(3) In accordance with JEDEC Standard 22, Test Method A114-B.
(4) In accordance with JEDEC Standard 22, Test Method A115-A
(5) In accordance with JEDEC Standard 22, Test Method C101-A
THERMAL INFORMATION
TPA3100D2
THERMAL METRIC (1) (2)
UNITS
RGZ (48 PINS) PHP (48 PINS)
qJA Junction-to-ambient thermal resistance 25 28.7
qJCtop Junction-to-case (top) thermal resistance 16.5 19.2
qJB Junction-to-board thermal resistance 12.8 12.4
°C/W
yJT Junction-to-top characterization parameter 0.2 0.2
yJB Junction-to-board characterization parameter 4.9 6.6
qJCbot Junction-to-case (bottom) thermal resistance 1.0 0.7
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.
DC CHARACTERISTICS
TA = 25°C, VCC = 24 V, RL = 8 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Class-D output offset voltage (measured
| VOS | VI = 0 V, Gain = 36 dB 5 50 mV
differentially)
Bypass reference for input amplifier VBYP, no load 1.1 1.25 1.45 V
4-V internal supply voltage VREG, no load, VCC = 10 V to 26 V 3.75 4 4.25 V
VCC = 12 V to 24 V, inputs ac coupled to AGND,
PSRR DC Power supply rejection ratio -70 dB
Gain = 36 dB
ICC Quiescent supply current SHUTDOWN = 2 V, MUTE = 0 V, no load, filter, 22 26.5 mA
or snubber
ICC(SD) Quiescent supply current in shutdown mode SHUTDOWN = 0.8 V, no load, filter, or snubber 180 250 µA
ICC(MUTE) Quiescent supply current in mute mode MUTE = 2 V, no load, filter, or snubber 8 10 mA
High Side 200
VCC = 12 V, IO = 500 mA,
rDS(on) Drain-source on-state resistance Low side 200 mΩ
TJ = 25°C
Total 400 500
GAIN0 = 0.8 V 19 20 21
GAIN1 = 0.8 V dB
GAIN0 = 2 V 25 26 27
G Gain
GAIN0 = 0.8 V 31 32 33
GAIN1 = 2 V dB
GAIN0 = 2 V 35 36 37
Gain matching Between channels 2%
tON Turn-on time C(VBYP) = 1 µF, SHUTDOWN = 2 V 25 ms
tOFF Turn-off time C(VBYP) = 1 µF, SHUTDOWN = 0.8 V 0.1 ms
DC CHARACTERISTICS
TA = 25°C, VCC = 12 V, RL = 8 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Class-D output offset voltage (measured
| VOS | VI = 0 V, Gain = 36 dB 5 50 mV
differentially)
Bypass reference for input amplifier VBYP, no load 1.1 1.25 1.45 V
4-V internal supply voltage VREG, no load 3.75 4 4.25 V
VCC = 12 V to 24 V, Inputs ac coupled to AGND,
PSRR DC Power supply rejection ratio -70 dB
Gain = 36 dB
ICC Quiescent supply current SHUTDOWN = 2 V, MUTE = 0 V, no load, filter, 18 22.5 mA
or snubber
ICC(SD) Quiescent supply current in shutdown mode SHUTDOWN = 0.8 V, no load, filter, or snubber 80 200 µA
ICC(MUTE) Quiescent supply current in mute mode MUTE = 2 V, no load, filter, or snubber 7 9 mA
DC CHARACTERISTICS (continued)
TA = 25°C, VCC = 12 V, RL = 8 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
High Side 200
VCC = 12 V, IO = 500 mA,
rDS(on) Drain-source on-state resistance Low side 200 mΩ
TJ = 25°C
Total 400 500
GAIN0 = 0.8 V 19 20 21
GAIN1 = 0.8 V dB
GAIN0 = 2 V 25 26 27
G Gain
GAIN0 = 0.8 V 31 32 33
GAIN1 = 2 V dB
GAIN0 = 2 V 35 36 37
tON Turn-on time C(VBYP) = 1 µF, SHUTDOWN = 2 V 25 ms
tOFF Turn-off time C(VBYP) = 1 µF, SHUTDOWN = 0.8 V 0.1 ms
AC CHARACTERISTICS
TA = 25°C, VCC = 24 V, RL = 8 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
200 mVPP ripple from 20 Hz–1 kHz,
KSVR Supply ripple rejection –70 dB
Gain = 20 dB, Inputs ac-coupled to AGND
THD+N = 7%, f = 1 kHz, VCC = 18 V 20.6 W
PO Continuous output power
THD+N = 10%, f = 1 kHz, VCC = 18 V 21.8 W
THD+N Total harmonic distortion + noise VCC = 18 V, f = 1 kHz, PO = 10 W (half-power) 0.11%
100 µV
Vn Output integrated noise 20 Hz to 22 kHz, A-weighted filter, Gain = 20 dB
–80 dBV
Crosstalk VO = 1 Vrms, Gain = 20 dB, f = 1 kHz –92 dB
Maximum output at THD+N < 1%, f = 1 kHz,
SNR Signal-to-noise ratio 102 dB
Gain = 20 dB, A-weighted
Thermal trip point 150 °C
Thermal hysteresis 30 °C
AC CHARACTERISTICS
TA = 25°C, VCC = 12 V, RL = 8 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
200 mVPP ripple from 20 Hz–1 kHz,
KSVR Supply ripple rejection –70 dB
Gain = 20 dB, Inputs ac-coupled to AGND
THD+N = 7%, f = 1 kHz 9.4
THD+N = 10%, f = 1 kHz 10
PO Continuous output power W
THD+N = 7%, f = 1 kHz, RL = 4 Ω 15.6
THD+N = 10%, f = 1 kHz, RL = 4 Ω 16.4
THD+N Total harmonic distortion + noise RL = 8 Ω, f = 1 kHz, PO = 5 W (half-power) 0.11%
RL = 4 Ω, f = 1 kHz, PO = 8 W (half-power) 0.15%
100 µV
Vn Output integrated noise 20 Hz to 22 kHz, A-weighted filter, Gain = 20 dB
–80 dBV
Crosstalk Po = 1 W, Gain = 20 dB, f = 1 kHz –94 dB
Maximum output at THD+N < 1%, f = 1 kHz,
SNR Signal-to-noise ratio 98 dB
Gain = 20 dB, A-weighted
Thermal trip point 150 °C
Thermal hysteresis 30 °C
SHUTDOWN
SHUTDOWN
ROUTN
ROUTN
ROUTP
ROUTP
ROUTN
ROUTN
ROUTP
ROUTP
FAULT
FAULT
MUTE
BSRN
BSRP
AVCC
AVCC
MUTE
BSRN
BSRP
AVCC
GND
NC
NC
48 47 46 45 44 43 42 41 40 39 38 37 48 47 46 45 44 43 42 41 40 39 38 37
NC 1 36 NC GND 1 36 GND
RINN 2 35 PVCCR RINN 2 35 PVCCR
RINP 3 34 PVCCR RINP 3 34 PVCCR
AGND 4 33 PGNDR AGND 4 33 PGNDR
LINP 5 32 PGNDR LINP 5 32 PGNDR
LINN 6 Exposed 31 VCLAMPR
Thermal Pad LINN 6 Exposed 31 VCLAMPR
NC 7 30 VCLAMPL Thermal Pad
GAIN0 7 30 VCLAMPL
GAIN0 8 29 PGNDL
GAIN0 8 29 PGNDL
GAIN1 9 28 PGNDL
GAIN1 9 28 PGNDL
MSTR/SLV 10 27 PVCCL
MSTR/SLV 10 27 PVCCL
SYNC 11 26 PVCCL
SYNC 11 26 PVCCL
NC 12 25 NC
GND 12 25 GND
13 14 15 16 17 18 19 20 21 22 23 24
13 14 15 16 17 18 19 20 21 22 23 24
LOUTN
LOUTN
BSLN
VREG
NC
ROSC
NC
AGND
VBYP
BSLP
LOUTP
LOUTP
LOUTN
LOUTN
LOUTP
LOUTP
GND
GND
BSLN
AGND
VREG
ROSC
VBYP
BSLP
TERMINAL FUNCTIONS
TERMINAL
QFN HTQFP I/O DESCRIPTION
NAME
NO. NO.
Shutdown signal for IC (LOW = disabled, HIGH = operational). TTL logic
SHUTDOWN 44 44 I
levels with compliance to AVCC.
RINN 2 2 I Negative audio input for right channel. Biased at VREG/2.
RINP 3 3 I Positive audio input for right channel. Biased at VREG/2.
LINN 6 6 I Negative audio input for left channel. Biased at VREG/2.
LINP 5 5 I Positive audio input for left channel. Biased at VREG/2.
GAIN0 8 7, 8 I Gain select least significant bit. TTL logic levels with compliance to VREG.
GAIN1 9 9 I Gain select most significant bit. TTL logic levels with compliance to VREG.
1, 12, 13,
GND 24, 25, 36, Connect to the thermal pad.
37
Mute signal for quick disable/enable of outputs (HIGH = outputs high-Z,
MUTE 45 45 I
LOW = outputs enabled). TTL logic levels with compliance to AVCC.
TTL compatible output. HIGH = short-circuit fault. LOW = no fault. Only
FAULT 46 46 O
reports short-circuit faults. Thermal faults are not reported on this terminal.
BSLP 18 18 I/O Bootstrap I/O for left channel, positive high-side FET.
Power supply for left channel H-bridge, not internally connected to PVCCR
PVCCL 26, 27 26, 27
or AVCC.
LOUTP 19, 20 19, 20 O Class-D 1/2-H-bridge positive output for left channel.
PGNDL 28, 29 28, 29 Power ground for left channel H-bridge.
LOUTN 21, 22 21, 22 O Class-D 1/2-H-bridge negative output for left channel.
BSLN 23 23 I/O Bootstrap I/O for left channel, negative high-side FET.
VCLAMPL 30 30 Internally generated voltage supply for left channel bootstrap capacitor.
VCLAMPR 31 31 Internally generated voltage supply for right channel bootstrap capacitor.
BSRN 38 38 I/O Bootstrap I/O for right channel, negative high-side FET.
ROUTN 39, 40 39, 40 O Class-D 1/2-H-bridge negative output for right channel.
PGNDR 32, 33 32, 33 Power ground for right channel H-bridge.
PVCCR
PVCCR
VCLAMPR
PVCCR
VBYP
BSRN
VBYP
AVCC
AVCC
Gain
Gate
Drive ROUTN
RINN VClamp
Gain PWM Gen
Control Logic PVCCR
RINP
VBYP
BSRP
Gate
To Gain Adj. Drive
GAIN0 Gain ROUTP
GAIN1 Control Blocks and
8 Startup Logic Gain
FAULT SC PGNDR
Detect
VREG 4V Reg
VCLAMPL
PVCCL
TLL Input
SHUTDOWN Buffer BSLN
(VCC Compliant)
TLL Input
MUTE Buffer Gate
Drive LOUTN
(VCC Compliant) Gain
VBYP VClamp
Gen PVCCL
LINN
Gain PWM BSLP
Control Logic
LINP
Gate
Drive LOUTP
Gain PGNDL
AGND
TYPICAL CHARACTERISTICS
RL = 8 W, RL = 8 W,
Gain = 20 dB Gain = 20 dB
1 1
PO = 10 W
PO = 5 W
0.1 0.1
PO = 5 W
PO = 2.5 W
0.005 0.005
0.003 0.003
20 100 1k 10k 20k 20 100 1k 10k 20k
f - Frequency - Hz f - Frequency - Hz
Figure 1. Figure 2.
RL = 8 W, RL = 4 W,
Gain = 20 dB Gain = 20 dB
1 1 PO = 5 W
PO = 10 W
PO = 10 W
0.1 0.1
PO = 1 W
PO = 5 W
PO = 1 W
0.01 0.01
0.005 0.005
0.003 0.003
20 100 1k 10k 20k 20 100 1k 10k 20k
f - Frequency - Hz f - Frequency - Hz
Figure 3. Figure 4.
RL = 8 W, RL = 8 W,
Gain = 32 dB Gain = 32 dB
1 1
10 kHz 10 kHz
0.1 0.1
0.01 0.01
10m 100m 200m 1 10 20 40 10m 100m 200m 1 10 20 40
PO - Output Power - W PO - Output Power - W
Figure 5. Figure 6.
VCC = 24 V,
THD+N - Total Harmonic Distortion + Noise - %
RL = 8 W, RL = 4 W,
Gain = 32 dB Gain = 32 dB
1 1
10 kHz
10 kHz
0.1 0.1
0.01 0.01
10m 100m 200m 1 10 20 40 10m 100m 200m 1 10 20 40
PO - Output Power - W PO - Output Power - W
Figure 7. Figure 8.
30 100 30 100
25 50 25 50
Gain − dB
Gain − dB
Phase − °
Phase − °
Phase Phase
20 0 20 0
PO − Output Power − W
35 25
THD+N = 10%
30
20
25
THD+N = 10%
15
20
THD+N = 1%
THD+N = 1%
15 10
10 Power Represented by
Power Represented by 5 Dash Lines May Require
5 Dash Lines May Require More Heatsinking.
More Heatsinking.
0 0
10 12 14 16 18 20 22 24 26 28 10 11 12 13 14 15 16
VCC - Supply Voltage - V VCC − Supply Voltage − V
Figure 11. Figure 12.
EFFICIENCY EFFICIENCY
vs vs
OUTPUT POWER OUTPUT POWER
100 100
VCC = 12 V
90 90 VCC = 12 V
80 80
VCC = 18 V
70 70
Efficiency − %
Efficiency − %
60 60
VCC = 24 V
50 50
40 40
30 30
20 20
RL = 8 W RL = 4 Ω
10 Gain = 32 dB 10 Gain = 32 dB
0 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 15
PO − Output Power (Per Channel) − W PO − Output Power (Per Channel) − W
Figure 13. Figure 14.
2.5
VCC = 12 V VCC = 12 V
1.5
2
VCC = 24 V 1.5
1
1
0.5
Power Represented by Power Represented by
0.5 Dash Lines May Require
Dash Lines May Require
More Heatsinking. More Heatsinking.
0 0
0 10 20 30 40 0 10 20 30 40
PO − Total Output Power − W PO − Total Output Power − W
Figure 15. Figure 16.
CROSSTALK CROSSTALK
vs vs
FREQUENCY FREQUENCY
-40 -40
VCC = 12 V VCC = 24 V
RL = 8 Ω RL = 8 Ω
Gain = 20 dB Gain = 20 dB
−60 −60
VO = 1 Vrms VO = 1 Vrms
L to R L to R
Crosstalk − dB
Crosstalk − dB
−80 −80
R to L R to L
−100 −100
−120 −120
−140 −140
20 100 1k 10k 20k 20 100 1k 10k 20k
f − Frequency − Hz f − Frequency − Hz
Figure 17. Figure 18.
−10 RL = 8 Ω −10 RL = 8 Ω
Gain = 20 dB Gain = 20 dB
−20 −20
V(RIPPLE) = 200 mVPP V(RIPPLE) = 200 mVPP
−30 −30
−40 −40
−50 −50
−60 −60
−70 −70
−80 −80
−90 −90
−100 −100
20 100 1k 10k 20k 20 100 1k 10k 20k
f − Frequency − Hz f − Frequency − Hz
Figure 19. Figure 20.
APPLICATION INFORMATION
Shutdown
Fault Output
and Mute
Control
1 nF 33 mH
1 mF
20 W 8W
1 nF 1 mF
33 mH
20 W
10 V - 26 V
220nF 220nF
10 mF
1 mF
SHUTDOWN
FAULT
ROUTN
ROUTN
BSRN
MUTE
ROUTP
ROUTP
AVCC
BSRP
NC
NC
10 V - 26 V
NC NC
1 mF
RINN PVCCR
1 mF
220 mF
RINP PVCCR
Differential 1 mF
Analog AGND PGNDR
Inputs 1 mF
LINP PGNDR
1 mF
VCLAMPR
LINN
1 mF TPA3100D2 1 mF
NC VCLAMPL
GAIN0 PGNDL
4-Step
Gain Control
GAIN1 PGNDL
220 mF
MSTR/SLV PVCCL
Synchronize Multiple
Class-D Devices SYNC PVCCL
LOUTN
LOUTN
LOUTP
LOUTP
1 mF
AGND
ROSC
VREG
VBYP
BSLN
BSLP
NC NC
NC
NC 10 V - 26 V
1 nF
10 nF
20 W
1 mF
1 nF 33 mH 1 mF
20 W 8W
1 mF
33 mH
Shutdown
Fault Output
and Mute
Control
1 nF 33 mH
1 mF
20 W 8W
1 nF 1 mF
33 mH
20 W
10 V - 26 V
220nF 220nF
10 mF
1 mF
SHUTDOWN
FAULT
ROUTN
ROUTN
BSRN
MUTE
ROUTP
ROUTP
AVCC
BSRP
NC
NC
10 V - 26 V
NC NC
1 mF
RINN PVCCR
1 mF
220 mF
RINP PVCCR
Single-Ended 1 mF
Analog AGND PGNDR
Inputs 1 mF
LINP PGNDR
1 mF
VCLAMPR
LINN
1 mF TPA3100D2 1 mF
NC VCLAMPL
GAIN0 PGNDL
4-Step
Gain Control
GAIN1 PGNDL
220 mF
MSTR/SLV PVCCL
Synchronize Multiple
Class-D Devices SYNC PVCCL
LOUTN
LOUTN
LOUTP
LOUTP
1 mF
AGND
ROSC
VREG
VBYP
BSLN
BSLP
NC NC
NC
NC
10 V - 26 V
100 kW
220nF 220nF
10 nF 1 nF
20 W
1 mF
1 nF 33 mH 1 mF
20 W 8W
1 mF
33 mH
Shutdown
Fault Output
and Mute
Control
1 nF 33 mH
1 mF
20 W 8W
1 nF 1 mF
33 mH
20 W
10 V - 26 V
220nF 220nF
10 mF
1 mF
SHUTDOWN
FAULT
ROUTN
ROUTN
GND
BSRN
MUTE
ROUTP
ROUTP
AVCC
AVCC
BSRP
10 V - 26 V
GND GND
1 mF
RINN PVCCR
1 mF
220 mF
RINP PVCCR
Differential 1 mF
Analog AGND PGNDR
Inputs 1 mF
LINP PGNDR
1 mF
LINN
TPA3100D2 VCLAMPR
1 mF 1 mF
GAIN0 VCLAMPL
GAIN0 PGNDL
4-Step
Gain Control
GAIN1 PGNDL
220 mF
MSTR/SLV PVCCL
Synchronize Multiple
Class-D Devices SYNC
LOUTN
PVCCL
LOUTN
LOUTP
LOUTP
1 mF
AGND
ROSC
VREG
VBYP
BSLN
BSLP
GND
GND
GND GND
10 V - 26 V
100 kW
220nF 220nF
10 nF 1 nF
20 W
1 mF
1 nF 33 mH 1 mF
20 W 8W
1 mF
33 mH
Shutdown
Fault Output
and Mute
Control
1 nF 33 mH
1 mF
20 W 8W
1 nF 1 mF
33 mH
20 W
10 V - 26 V
220nF 220nF
10 mF
1 mF
SHUTDOWN
FAULT
ROUTN
ROUTN
GND
BSRN
MUTE
ROUTP
ROUTP
AVCC
AVCC
BSRP
10 V - 26 V
GND GND
1 mF
RINN PVCCR
1 mF
220 mF
RINP PVCCR
Single-Ended 1 mF
Analog AGND PGNDR
Inputs 1 mF
LINP PGNDR
1 mF
LINN
TPA3100D2 VCLAMPR
1 mF 1 mF
GAIN0 VCLAMPL
GAIN0 PGNDL
4-Step
Gain Control
GAIN1 PGNDL
220 mF
MSTR/SLV PVCCL
Synchronize Multiple
Class-D Devices SYNC
LOUTN
PVCCL
LOUTN
LOUTP
LOUTP
1 mF
AGND
ROSC
VREG
VBYP
BSLN
BSLP
GND
GND
GND GND
10 V - 26 V
100 kW
220nF 220nF
10 nF 1 nF
20 W
1 mF
1 nF 33 mH 1 mF
20 W 8W
1 mF
33 mH
CLASS-D OPERATION
This section focuses on the class-D operation of the TPA3100D2.
OUTP
OUTN
+12 V
Differential Voltage
0V
Across Load
-12 V
Current
Figure 25. Traditional Class-D Modulation Scheme's Output Voltage and Current Waveforms into an
Inductive Load With No Input
OUTP
OUTN
Output = 0 V
Differential +12 V
Voltage
0V
Across
Load -12 V
Current
OUTP
Differential +12 V
Voltage
0V
Across
-12 V
Load
Current
Figure 26. The TPA3100D2 Output Voltage and Current Waveforms Into an Inductive Load
Most applications require a ferrite bead filter. The ferrite filter reduces EMI around 1 MHz and higher (FCC and
CE only test radiated emissions greater than 30 MHz). When selecting a ferrite bead, choose one with high
impedance at high frequencies, but low impedance at low frequencies.
Use an LC output filter if there are low frequency (<1 MHz) EMI-sensitive circuits and/or there are long wires
from the amplifier to the speaker.
When both an LC filter and a ferrite bead filter are used, the LC filter should be placed as close as possible to
the IC followed by the ferrite bead filter.
33 mH
OUTP
C2
L1
1 mF
33 mH
OUTN
C3
L2
1 mF
Figure 27. Typical LC Output Filter, Cutoff Frequency of 28 kHz, Speaker Impedance = 8 Ω
15 mH
OUTP
L1 C2
2.2 mF
15 mH
OUTN
L2 C3
2.2 mF
Figure 28. Typical LC Output Filter, Cutoff Frequency of 28 kHz, Speaker Impedance = 4 Ω
Ferrite
Chip Bead
OUTP
1 nF
Ferrite
Chip Bead
OUTN
1 nF
Figure 29. Typical Ferrite Chip Bead Filter (Chip Bead Example: Fair-Rite 2512067007Y3)
Using the LC filter in Figure 27, the TPA3100D2 EMI EVM passed the FCC Part 15 Class B radiated emissions
with 21-inch speaker wires. Quasi-peak measurements were taken for the 4 standard test configurations, and the
TPA3100D2 EVM passed with at least 17-dB margin. A plot of the peak measurement for the horizontal rear
configuration is shown in Figure 30.
National Technical Systems, Plano TX
Radiated Emissions 30 MHz - 1000 MHz
FCC B
70
60
FCC B Limit
Limit Level - dB(mV/m)
50
40
30
Peak dB
20
20
0
30 M 230 M 430 M 630 M 830 M
f - Frequency - Hz
Inductors used in LC filters must be chosen carefully. A significant change in inductance at the peak output
current of the TPA3100D2 will cause increased distortion. The change of inductance at currents up to the peak
output current must be less than 0.1 mH per amp to avoid this distortion. Also note that smaller inductors than 33
mH may cause an increase in distortion above what is shown in the preceding graphs of THD versus frequency
and output power.
Capacitors used in LC filters must also be chosen carefully. A significant change in capacitance at the peak
output voltage of the TPA3100D2 will cause increased distortion. LC filter capacitors should have DC voltage
ratings at least twice the peak application voltage (the power supply voltage) and should be made of X5R or
better material. In all cases avoid using capacitors with loose temperature ratings, like Y5V.
TPA3100D2 TPA3100D2
V - Voltage = 10 V/div
V - Voltage = 1 V/div
Closest Competitor Closest Competitor
Figure 31. 1-kHz Sine Output at 10% THD+N Figure 32. 8-kHz Sine Output at 10% THD+N
The Texas Instruments patent-pending adaptive dynamic range control (ADRC) technology removes the notch
inherent in class-D audio power amplifiers when they come out of clipping. This effect is more severe at higher
frequencies as shown in Figure 32.
INPUT RESISTANCE
Changing the gain setting can vary the input resistance of the amplifier from its smallest value, 16 kΩ ±20%, to
the largest value, 32 kΩ ±20%. As a result, if a single capacitor is used in the input high-pass filter, the -3 dB or
cutoff frequency may change when changing gain steps.
Zf
Ci
Zi
Input IN
Signal
The -3-dB frequency can be calculated using Equation 1. Use the ZI values given in Table 2.
1
f =
2p Zi Ci (1)
INPUT CAPACITOR, CI
In the typical application, an input capacitor (CI) is required to allow the amplifier to bias the input signal to the
proper dc level for optimum operation. In this case, CI and the input impedance of the amplifier (ZI) form a
high-pass filter with the corner frequency determined in Equation 2.
-3 dB
1
fc =
2p Zi Ci
fc (2)
The value of CI is important, as it directly affects the bass (low-frequency) performance of the circuit. Consider
the example where ZI is 20 kΩ and the specification calls for a flat bass response down to 20 Hz. Equation 2 is
reconfigured as Equation 3.
1
Ci =
2p Zi fc (3)
In this example, CI is 0.4 µF; so, one would likely choose a value of 0.47 mF as this value is commonly used. If
the gain is known and is constant, use ZI from Table 2 to calculate CI. A further consideration for this capacitor is
the leakage path from the input source through the input network (CI) and the feedback network to the load. This
leakage current creates a dc offset voltage at the input to the amplifier that reduces useful headroom, especially
in high gain applications. For this reason, a low-leakage tantalum or ceramic capacitor is the best choice. When
polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most
applications as the dc level there is held at 2 V, which is likely higher than the source dc level. Note that it is
important to confirm the capacitor polarity in the application. Additionally, lead-free solder can create dc offset
voltages and it is important to ensure that boards are cleaned properly.
IC Output Snubbers
1-nF capacitors in series with 20-Ω resistors from the outputs of the TPA3100D2 IC to ground are switching
snubbers. These are illustrated in Figure 33. They linearize switching transitions and reduce overshoot and
ringing. By doing so they improve THD+N, reducing it by a factor near 3 at 1kHz, 1W; and they improve EMC by
2 to 6 dB at middle frequencies. They increase quiescent current by 5 to 15 mA depending on power supply
voltage.
OUTP
OUTN
1 nF 1 nF
20 W 20 W
VCLAMP Capacitors
To ensure that the maximum gate-to-source voltage for the NMOS output transistors is not exceeded, two
internal regulators clamp the gate voltage. Two 1-mF capacitors must be connected from VCLAMPL (pin 30) and
VCLAMPR (pin 31) to ground and must be rated for at least 16 V. The voltages at the VCLAMP terminals may
vary with VCC and may not be used for powering any other circuitry.
A secondary function of the VBYP capacitor is to filter high-frequency noise on the internal 1.25-V bias generator.
A value of at least 0.47µF is recommended for the VBYP capacitor. For the best power-up and shutdown pop
performance, the VBYP capacitor should be greater than or equal to the input capacitors.
Differential Input
The differential input stage of the amplifier cancels any noise that appears on both input lines of the channel. To
use the TPA3100D2 with a differential source, connect the positive lead of the audio source to the INP input and
the negative lead from the audio source to the INN input. To use the TPA3100D2 with a single-ended source, ac
ground the INP or INN input through a capacitor equal in value to the input capacitor on INN or INP and apply
the audio source to either input. In a single-ended input application, the unused input should be ac grounded at
the audio source instead of at the device input for best noise performance.
SHUTDOWN OPERATION
The TPA3100D2 employs a shutdown mode of operation designed to reduce supply current (ICC) to the absolute
minimum level during periods of nonuse for power conservation. The SHUTDOWN input terminal should be held
high (see specification table for trip point) during normal operation when the amplifier is in use. Pulling
SHUTDOWN low causes the outputs to mute and the amplifier to enter a low-current state. Never leave
SHUTDOWN unconnected, because amplifier operation would be unpredictable.
For the best power-off pop performance, place the amplifier in the shutdown or mute mode prior to removing the
power supply voltage.
MUTE Operation
The MUTE pin is an input for controlling the output state of the TPA3100D2. A logic high on this terminal
disables the outputs. A logic low on this pin enables the outputs. This terminal may be used as a quick
disable/enable of outputs when changing channels on a television or transitioning between different audio
sources.
The MUTE terminal should never be left floating. For power conservation, the SHUTDOWN terminal should be
used to reduce the quiescent current to the absolute minimum level.
The MUTE terminal can also be used with the FAULT output to automatically recover from a short-circuit event.
When a short-circuit event occurs, the FAULT terminal transitions high indicating a short-circuit has been
detected. When directly connected to MUTE, the MUTE terminal transitions high, and clears the internal fault
flag. This causes the FAULT terminal to cycle low, and normal device operation resumes if the short-circuit is
removed from the output. If a short remains at the output, the cycle continues until the short is removed.
If external MUTE control is desired, and automatic recovery from a short-circuit event is also desired, an OR gate
can be used to combine the functionality of the FAULT output and external MUTE control, see Figure 34.
TPA3100D2
External GPIO
Control
MUTE
FAULT
THERMAL PROTECTION
Thermal protection on the TPA3100D2 prevents damage to the device when the internal die temperature
exceeds 150°C. There is a ±15°C tolerance on this trip point from device to device. Once the die temperature
exceeds the thermal set point, the device enters into the shutdown state and the outputs are disabled. This is not
a latched fault. The thermal fault is cleared once the temperature of the die is reduced by 30°C. The device
begins normal operation at this point with no external system interaction.
The generator output and amplifier input must be ac-coupled. However, the EVMs already have the ac-coupling
capacitors, (CIN), so no additional coupling is required. The generator output impedance should be low to avoid
attenuating the test signal, and is important because the input resistance of APAs is not high. Conversely, the
analyzer-input impedance should be high. The output resistance, ROUT, of the APA is normally in the hundreds of
milliohms and can be ignored for all but the power-related calculations.
Figure 35(a) shows a class-AB amplifier system. It takes an analog signal input and produces an analog signal
output. This amplifier circuit can be directly connected to the AP-II or other analyzer input.
This is not true of the class-D amplifier system shown in Figure 35(b), which requires low-pass filters in most
cases in order to measure the audio output waveforms. This is because it takes an analog input signal and
converts it into a pulse-width modulated (PWM) output signal that is not accurately processed by some
analyzers.
Power Supply
Power Supply
Low-Pass RC
Filter
Signal Class-D APA RL Analyzer
Generator (See note A) 20 Hz - 20 kHz
Low-Pass RC
Filter
The TPA3100D2 uses a modulation scheme that does not require an output filter for operation, but they do
sometimes require an RC low-pass filter when making measurements. This is because some analyzer inputs
cannot accurately process the rapidly changing square-wave output and therefore record an extremely high level
of distortion. The RC low-pass measurement filter is used to remove the modulated waveforms so the analyzer
can measure the output sine wave.
Evaluation Module
Audio Power
Generator Analyzer
Amplifier
CIN Low-Pass
RC Filter
RGEN RIN ROUT RANA CANA
VGEN RL
CIN
Low-Pass
RGEN RIN ROUT RC Filter RANA CANA
The generator should have balanced outputs, and the signal should be balanced for best results. An unbalanced
output can be used, but it may create a ground loop that affects the measurement accuracy. The analyzer must
also have balanced inputs for the system to be fully balanced, thereby cancelling out any common-mode noise in
the circuit and providing the most accurate measurement.
The following general rules should be followed when connecting to APAs with differential inputs and BTL outputs:
• Use a balanced source to supply the input signal.
• Use an analyzer with balanced inputs.
• Use twisted-pair wire for all connections.
• Use shielding when the system environment is noisy.
• Ensure that the cables from the power supply to the APA, and from the APA to the load, can handle the large
currents (see Table 3).
Table 3 shows the recommended wire size for the power supply and load cables of the APA system. The real
concern is the dc or ac power loss that occurs as the current flows through the cable. These recommendations
are based on 12-inch long wire with a 20-kHz sine-wave signal at 25°C.
RL VL= VIN
VOUT
RFILT
To APA
GND
The transfer function for this circuit is shown in Equation 5 where wO = REQCEQ, REQ = RFILT || RANA and
CEQ = (CFILT + CANA). The filter frequency should be set above fMAX, the highest frequency of the measurement
bandwidth, to avoid attenuating the audio signal. Equation 6 provides this cutoff frequency, fC. The value of RFILT
must be chosen large enough to minimize current that is shunted from the load, yet small enough to minimize the
attenuation of the analyzer-input voltage through the voltage divider formed by RFILT and RANA. A general rule is
that RFILT should be small (~100 Ω) for most measurements. This reduces the measurement error to less than
1% for RANA ≥ 10 kΩ.
( RANA
)
( )
VOUT
VIN
=
RANA + RFILT
1 + j ( )w
wO
(5)
fc = Ö2 x fmax (6)
An exception occurs with the efficiency measurements, where RFILT must be increased by a factor of ten to
reduce the current shunted through the filter. CFILT must be decreased by a factor of ten to maintain the same
cutoff frequency. See Table 4 for the recommended filter component values.
Once fC is determined and RFILT is selected, the filter capacitance is calculated using Equation 7. When the
calculated value is not available, it is better to choose a smaller capacitance value to keep fC above the minimum
desired value calculated in Equation 7.
1
CFILT =
2p x fc x RFILT (7)
Table 4 shows recommended values of RFILT and CFILT based on common component values. The value of fC
was originally calculated to be 28 kHz for an fMAX of 20 kHz. CFILT, however, was calculated to be 57,000 pF, but
the nearest values of 56,000 pF and 51,000 pF were not available. A 47,000-pF capacitor was used instead, and
fC is 34 kHz, which is above the desired value of 28 kHz.
spacer
REVISION HISTORY
• Replaced the TYPICAL DISSIPATION RATINGS table with the Thermal Inforamtion table ............................................... 2
www.ti.com 15-Apr-2017
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
HPA00297PHPR ACTIVE HTQFP PHP 48 1000 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 TPA3100D2
& no Sb/Br)
TPA3100D2PHP ACTIVE HTQFP PHP 48 250 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 TPA3100D2
& no Sb/Br)
TPA3100D2PHPG4 ACTIVE HTQFP PHP 48 250 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 TPA3100D2
& no Sb/Br)
TPA3100D2PHPR ACTIVE HTQFP PHP 48 1000 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 TPA3100D2
& no Sb/Br)
TPA3100D2PHPRG4 ACTIVE HTQFP PHP 48 1000 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 TPA3100D2
& no Sb/Br)
TPA3100D2RGZR ACTIVE VQFN RGZ 48 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 TPA
& no Sb/Br) 3100D2
TPA3100D2RGZRG4 ACTIVE VQFN RGZ 48 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 TPA
& no Sb/Br) 3100D2
TPA3100D2RGZT ACTIVE VQFN RGZ 48 250 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 TPA
& no Sb/Br) 3100D2
TPA3100D2RGZTG4 ACTIVE VQFN RGZ 48 250 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 TPA
& no Sb/Br) 3100D2
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 15-Apr-2017
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
• Automotive: TPA3100D2-Q1
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Jul-2013
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Jul-2013
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated (TI) reserves the right to make corrections, enhancements, improvements and other changes to its
semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers
should obtain the latest relevant information before placing orders and should verify that such information is current and complete.
TI’s published terms of sale for semiconductor products (http://www.ti.com/sc/docs/stdterms.htm) apply to the sale of packaged integrated
circuit products that TI has qualified and released to market. Additional terms may apply to the use or sale of other types of TI products and
services.
Reproduction of significant portions of TI information in TI data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such reproduced
documentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statements
different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the
associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements.
Buyers and others who are developing systems that incorporate TI products (collectively, “Designers”) understand and agree that Designers
remain responsible for using their independent analysis, evaluation and judgment in designing their applications and that Designers have
full and exclusive responsibility to assure the safety of Designers' applications and compliance of their applications (and of all TI products
used in or for Designers’ applications) with all applicable regulations, laws and other applicable requirements. Designer represents that, with
respect to their applications, Designer has all the necessary expertise to create and implement safeguards that (1) anticipate dangerous
consequences of failures, (2) monitor failures and their consequences, and (3) lessen the likelihood of failures that might cause harm and
take appropriate actions. Designer agrees that prior to using or distributing any applications that include TI products, Designer will
thoroughly test such applications and the functionality of such TI products as used in such applications.
TI’s provision of technical, application or other design advice, quality characterization, reliability data or other services or information,
including, but not limited to, reference designs and materials relating to evaluation modules, (collectively, “TI Resources”) are intended to
assist designers who are developing applications that incorporate TI products; by downloading, accessing or using TI Resources in any
way, Designer (individually or, if Designer is acting on behalf of a company, Designer’s company) agrees to use any particular TI Resource
solely for this purpose and subject to the terms of this Notice.
TI’s provision of TI Resources does not expand or otherwise alter TI’s applicable published warranties or warranty disclaimers for TI
products, and no additional obligations or liabilities arise from TI providing such TI Resources. TI reserves the right to make corrections,
enhancements, improvements and other changes to its TI Resources. TI has not conducted any testing other than that specifically
described in the published documentation for a particular TI Resource.
Designer is authorized to use, copy and modify any individual TI Resource only in connection with the development of applications that
include the TI product(s) identified in such TI Resource. NO OTHER LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE
TO ANY OTHER TI INTELLECTUAL PROPERTY RIGHT, AND NO LICENSE TO ANY TECHNOLOGY OR INTELLECTUAL PROPERTY
RIGHT OF TI OR ANY THIRD PARTY IS GRANTED HEREIN, including but not limited to any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information
regarding or referencing third-party products or services does not constitute a license to use such products or services, or a warranty or
endorsement thereof. Use of TI Resources may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
TI RESOURCES ARE PROVIDED “AS IS” AND WITH ALL FAULTS. TI DISCLAIMS ALL OTHER WARRANTIES OR
REPRESENTATIONS, EXPRESS OR IMPLIED, REGARDING RESOURCES OR USE THEREOF, INCLUDING BUT NOT LIMITED TO
ACCURACY OR COMPLETENESS, TITLE, ANY EPIDEMIC FAILURE WARRANTY AND ANY IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF ANY THIRD PARTY INTELLECTUAL
PROPERTY RIGHTS. TI SHALL NOT BE LIABLE FOR AND SHALL NOT DEFEND OR INDEMNIFY DESIGNER AGAINST ANY CLAIM,
INCLUDING BUT NOT LIMITED TO ANY INFRINGEMENT CLAIM THAT RELATES TO OR IS BASED ON ANY COMBINATION OF
PRODUCTS EVEN IF DESCRIBED IN TI RESOURCES OR OTHERWISE. IN NO EVENT SHALL TI BE LIABLE FOR ANY ACTUAL,
DIRECT, SPECIAL, COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL OR EXEMPLARY DAMAGES IN
CONNECTION WITH OR ARISING OUT OF TI RESOURCES OR USE THEREOF, AND REGARDLESS OF WHETHER TI HAS BEEN
ADVISED OF THE POSSIBILITY OF SUCH DAMAGES.
Unless TI has explicitly designated an individual product as meeting the requirements of a particular industry standard (e.g., ISO/TS 16949
and ISO 26262), TI is not responsible for any failure to meet such industry standard requirements.
Where TI specifically promotes products as facilitating functional safety or as compliant with industry functional safety standards, such
products are intended to help enable customers to design and create their own applications that meet applicable functional safety standards
and requirements. Using products in an application does not by itself establish any safety features in the application. Designers must
ensure compliance with safety-related requirements and standards applicable to their applications. Designer may not use any TI products in
life-critical medical equipment unless authorized officers of the parties have executed a special contract specifically governing such use.
Life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., life
support, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). Such equipment includes, without limitation, all
medical devices identified by the U.S. Food and Drug Administration as Class III devices and equivalent classifications outside the U.S.
TI may expressly designate certain products as completing a particular qualification (e.g., Q100, Military Grade, or Enhanced Product).
Designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applications
and that proper product selection is at Designers’ own risk. Designers are solely responsible for compliance with all legal and regulatory
requirements in connection with such selection.
Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer’s non-
compliance with the terms and provisions of this Notice.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2017, Texas Instruments Incorporated