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TO-220F PNP Transistor Specs

This document provides information on the 2SB1370 transistor from Jiangsu Changjiang Electronics Technology Co., Ltd. It is a plastic-encapsulated PNP transistor in the TO-220F package. Key specifications include a breakdown voltage up to -60V, saturation voltage below -1.5V, and DC current gain ranging from 100-320. The transistor has a continuous collector current rating of -3A and maximum junction temperature of 150°C.

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135 views2 pages

TO-220F PNP Transistor Specs

This document provides information on the 2SB1370 transistor from Jiangsu Changjiang Electronics Technology Co., Ltd. It is a plastic-encapsulated PNP transistor in the TO-220F package. Key specifications include a breakdown voltage up to -60V, saturation voltage below -1.5V, and DC current gain ranging from 100-320. The transistor has a continuous collector current rating of -3A and maximum junction temperature of 150°C.

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isaiasva
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-220F Plastic-Encapsulate Transistors


TO-220F
2SB1370 TRANSISTOR (PNP)

FEATURES
z Breakdown Voltage High 1. BASE
z Reverse Cut-off Current Small
z Saturation Voltage Low 2. COLLECTOR

z Collector Power dissipation


3. EMITTE
PCM : 2 W (Tamb=25℃)
30 W (Tcase=25℃)

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -3 A

TJ Junction temperature 150 ℃


Tstg Storage temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-50μA, IE=0 -60 V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -60 V

Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -5 V

Collector cut-off current ICBO VCB=-60V, IE=0 -10 μA

Emitter cut-off current IEBO VEB=-4V, IC=0 -10 μA

DC current gain hFE * VCE=-5V, IC=-500mA 100 320

Collector-emitter saturation voltage VCE(sat) * IC=-2A, IB=-0.2A -1.5 V

Base-emitter saturation voltage VBE(sat) * IC=-2A, IB=-0.2A -1.5 V

Transition frequency fT VCE=-5V, IC=-500mA,f=5MHz 15 MHz

Out capacitance Cob VCB= -10 V ,f=1MHZ 80 pF

*Pulse test: tp≤300μS, δ≤0.02.


CLASSIFICATION OF hFE
Rank E F

Range 100-200 160-320


Typical Characteristics 2SB1370

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