2N6284
®
2N6287
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
■ STMicroelectronics PREFERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT 1
2
DESCRIPTION
The 2N6284 is a silicon epitaxial-base NPN
power transistor in monolithic Darlington TO-3
configuration mounted in Jedec TO-3 metal case.
It is inteded for general purpose amplifier and low
frequency switching applications.
The complementary PNP types is 2N6287.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 8 KΩ R2 Typ. = 60 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN 2N6284
PNP 2N6287
V CBO Collector-Base Voltage (I E = 0) 100 V
V CEO Collector-Emitter Voltage (I B = 0) 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 20 A
I CM Collector Peak Current 40 A
IB Base Current 0.5 A
P tot Total Dissipation at T c ≤ 25 o C 160 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
For PNP types voltage and current values are negative.
December 2000 1/4
2N6284 / 2N6287
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.09 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEV Collector Cut-off V CE = rated V CEO 0.5 mA
Current (V BE = -1.5V) V CE = rated V CEO T c = 150 o C 5 mA
I CEO Collector Cut-off V CE = 50 V 1 mA
Current (I B = 0)
I EBO Emitter Cut-off Current V EB = 5 V 2 mA
(I C = 0)
V CEO(sus) ∗ Collector-Emitter I C = 100 mA 100 V
Sustaining Voltage
V CE(sat) ∗ Collector-Emitter I C = 10 A I B = 40 mA 2 V
Saturation Voltage I C = 20 A I B = 200 mA 3 V
V BE(sat) ∗ Base-Emitter I C = 20 A I B = 200 mA 4 V
Saturation Voltage
V BE ∗ Base-Emitter Voltage I C = 10 A V CE = 3 V 2.8 V
h FE ∗ DC Current Gain I C = 10 A V CE = 3 V 750 18000
I C = 20 A V CE = 3 V 100
hfe Small Signal Current IC = 3 A V CE = 10 V f = 1KHz 300
Gain
C CBO Collector Base IE = 0 V CB = 10 V f = 100KHz
Capacitance for NPN types 400 pF
for PNP types 600 pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
2N6284 / 2N6287
TO-3 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
A D
P
G C E
U
B
O
N
R
P003F
3/4
2N6284 / 2N6287
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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4/4
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
