BC640 PNP Epitaxial Silicon Transistor

BC640
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC639

TO-92
1
1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings T a = 25°C unless otherwise noted

Symbol Parameter Value Units

VCER Collector-Emitter Voltage at RBE=1KΩ -100 V
VCES Collector-Emitter Voltage -100 V
VCEO Collector-Emitter Voltage -80 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -1 A
ICP Peak Collector Current -1.5 A
IB Base Current -100 mA
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta = 25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -80 V
ICBO Collector Cut-off Current VCB= -30V, IE=0 -0.1 µA
IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA
hFE1 DC Current Gain VCE= -2V, IC= -5mA 25
hFE2 VCE= -2V, IC= -150mA 40 160
hFE3 VCE= -2V, IC= -500mA 25
VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.5 V
VBE (on) Base-Emitter On Voltage VCE= -2V, IC= -500mA -1 V
fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, 100 MHz
f=50MHz

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

BC640 Rev. C2
 BC640 PNP Epitaxial Silicon Transistor
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
BC640 BC640BU TO-92 -- -- 10,000
BC640 BC640TA TO-92 -- -- 2,000
BC640 BC640TAR TO-92 -- -- 2,000
BC640 BC640TF TO-92 -- -- 2,000
BC640 BC640TFR TO-92 -- -- 2,000

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BC640 Rev. C2
 BC640 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain

-500 1000
IB = - 1.8 mA
IB = - 1.6 mA VCE = - 2V
IC[mA], COLLECTOR CURRENT

-400
IB = - 1.4 mA

hFE, DC CURRENT GAIN

IB = - 1.2 mA
-300 IB = - 1.0 mA

IB = - 0.8 mA 100

-200 IB = - 0.6 mA

IB = - 0.4 mA

-100 IB = - 0.2 mA

-0 10
-0 -10 -20 -30 -40 -50 -1 -10 -100 -1000

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-10 -1000

IC = 10 IB VCE = - 2V
IC[mA], COLLECTOR CURRENT

-1 VBE(sat) -100

-0.1 -10

VCE(sat)

-0.01 -1
-1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Collector Output Capacitance

100

f=1MHz
Cob[pF], CAPACITANCE

10

1
-1 -10 -100

VCB[V], COLLECTOR-BASE VOLTAGE

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BC640 Rev. C2
 BC640 PNP Epitaxial Silicon Transistor
Mechanical Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20
0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

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BC640 Rev. C2
 BC640 PNP Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
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Across the board. Around the world.™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 2. A critical component is any component of a life support device
1. Life support devices or systems are devices or systems which, or system whose failure to perform can be reasonably expected
(a) are intended for surgical implant into the body, or (b) support to cause the failure of the life support device or system, or to
or sustain life, or (c) whose failure to perform when properly used affect its safety or effectiveness.
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I16

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BC640 Rev. C2