QN3107M6N

N-Channel 30V Fast Switching MOSFET

General Description Product Summary

The QN3107M6N is the highest performance RDSON ID

trench N-Channel MOSFET with extreme high BVDSS
(VGS=10V) (TC=25℃)
cell density , which provide excellent RDSON
30V 2.6mΩ 110A
and gate charge for most of the synchronous
buck converter applications .
Applications
The QN3107M6N meet the RoHS and Green
Product requirement with full function reliability High Frequency Point-of-Load Synchronous
approved. Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
Features

Advanced high cell density Trench technology PRPAK 5X6 Pin Configuration
Super Low Gate Charge
D
Green Device Available

G
Absolute Maximum Ratings SS S

Symbol Parameter Rating Units

VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 110 A
1
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 70 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 22 A
1
ID@TA=70℃ Continuous Drain Current, VGS @ 10V 17 A
2
IDM Pulsed Drain Current 220 A
3
EAS Single Pulse Avalanche Energy 155.1 mJ
IAS Avalanche Current 55.7 A
4
PD@TC=25℃ Total Power Dissipation 50 W
4
PD@TA=25℃ Total Power Dissipation 2.0 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

1
RθJA Thermal Resistance Junction-Ambient --- 62 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 2.5 ℃/W

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 QN3107M6N
N-Channel 30V Fast Switching MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.01 --- V/℃

2 VGS=10V , ID=30A --- 2.1 2.6

RDS(ON) Static Drain-Source On-Resistance mΩ
VGS=4.5V , ID=15A --- 2.9 3.8
VGS(th) Gate Threshold Voltage 1.2 --- 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -4.6 --- mV/℃
VDS=24V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=15A --- 47.5 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.9 --- Ω
Qg Total Gate Charge (10V) --- 31.4 ---
Qg Total Gate Charge (4.5V) --- 15.1 ---
VDS=15V , VGS=4.5V , ID=15A nC
Qgs Gate-Source Charge --- 5.4 ---
Qgd Gate-Drain Charge --- 5.2 ---
Td(on) Turn-On Delay Time --- 10.8 ---
Tr Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 44.6 ---
ns
Td(off) Turn-Off Delay Time ID=15A --- 25.3 ---
Tf Fall Time --- 6.1 ---
Ciss Input Capacitance --- 1917 ---
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 1086 --- pF
Crss Reverse Transfer Capacitance --- 47 ---

Guaranteed Avalanche Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit
5
EAS Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS= 35A 61.25 --- --- mJ

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,6
IS Continuous Source Current --- --- 110 A
2,6
VG=VD=0V , Force Current
ISM Pulsed Source Current --- --- 220 A
2
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time --- 73.6 --- nS
IF=15A , dI/dt=100A/µs , TJ=25℃
Qrr Reverse Recovery Charge --- 62.3 --- nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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 QN3107M6N
N-Channel 30V Fast Switching MOSFET
Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

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 QN3107M6N
N-Channel 30V Fast Switching MOSFET

Fig.7 Drain-Source On-State Resistance Fig.8 Transfer Characteristics

Fig.9 Capacitance Fig.10 Safe Operating Area

Fig.11 Transient Thermal Impedance

4 Rev A.02 D052317

 QN3107M6N
N-Channel 30V Fast Switching MOSFET
Top Marking

PRPAK5X6 Package Outline Drawing

5 Rev A.02 D052317