Radiation Effects on Emerging Electronic Materials and Devices
Ron Schrimpf Vanderbilt University Institute for Space and Defense Electronics
Team Members
Vanderbilt University
Electrical Engineering: Dan Fleetwood, Marcus Mendenhall, Lloyd Massengill, Robert Reed, Ron Schrimpf, Bob Weller Physics: Len Feldman, Sok Pantelides
Arizona State University
Electrical Engineering: Hugh Barnaby
University of Florida
Electrical and Computer Engineering: Mark Law, Scott Thompson
Georgia Tech
Electrical and Computer Engineering: John Cressler
North Carolina State University
Physics: Gerry Lucovsky
Rutgers University
Chemistry: Eric Garfunkel, Evgeni Gusev
Institute for Space and Defense Electronics
Resource to support national requirements in radiation effects analysis and rad-hard design Bring academic resources/expertise and real-world engineering to bear on system-driven needs ISDE provides: Government and industry radiation-effects resource
Modeling and simulation Design support: rad models, hardening by design Technology support: assessment, characterization
Flexible staffing driven by project needs
Faculty Graduate students Professional, non-tenured engineering staff
Radiation Effects on Emerging Electronic Materials and Devices
More changes in IC technology and materials in past five years than previous forty years
SiGe, SOI, strained Si, alternative dielectrics, new metallization systems, ultra-small devices
Future space and defense systems require understanding radiation effects in advanced technologies
Changes in device geometry and materials affect energy deposition, charge collection, circuit upset, parametric degradation
Approach
Experimental analysis of radiation response of devices and materials fabricated in university labs and by industrial partners First-principles quantum mechanical analysis of radiation-induced defects physically based engineering models Development and application of a fundamentally new multi-scale simulation approach Validation of simulation through experiments
Virtual Irradiation
Fundamentally new approach for simulating radiation effects Applicable to all tasks
QuickTime and a TIFF (LZW) decompressor are neede d to see this picture.
Physically Based Simulation of Radiation Events
High energy protons incident on advanced CMOS integrated circuit Interaction with metallization layers dramatically increases energy deposition
Device Description Radiation Events
Hierarchical Multi-Scale Analysis of Radiation Effects
Materials
Device Structure Energy Deposition
IC Design
Defect Models Device Simulation Circuit Response
Current Joint Program of ISDE/VU and CFDRC
Improved Understanding of Space Radiation Effects in Exploration Electronics by Advanced Modeling of Nanoscale Devices and Novel Materials
STTR Phase I Project, sponsored by NASA Ames (2005): Program Objectives: Couple Vanderbilt Geant4 and CFDRC NanoTCAD 3D Device Solver Adaptive/dynamic 3D meshing for multiple ion tracks
Statistically meaningful runs on a massively parallel computing cluster
Integrated and automated interface of Geant4 and CFDRC NanoTCAD 3D device simulation
Geant4
- accurate model of radiation event - Adaptive 3D meshing - 3D Nanoscale transport
1.E-03
ion str ike He ion, LET= 1.18, R= 0.02um He ion, P- sub Contact
- Physics based transient response
C ion, LET =5.06, R =0.06um C ion, P- sub Contact
p
Blue = + ions
e-
Drain Curre nt (A) 8.E-04
0.13um NMOS, Vd = 1.2 V, Vg = 0V Tw o differe nt ion strikes Psub Contact / No-Contact
6.E-04
4.E-04
2.E-04
Time (s)
0.E+00 1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
Research Plan
Tasks defined and scheduled
Organization by Task
Radiation response of new materials
NCSU, Rutgers, Vanderbilt
Impact of new device technologies on radiation response
ASU, Florida, Georgia Tech, Vanderbilt
Single-event effects in new technologies and ultrasmall devices
Florida, Georgia Tech, Vanderbilt
Displacement-damage and total-dose effects in ultrasmall devices
ASU, Vanderbilt
Radiation Response of New Materials
HfO2-based dielectrics and emerging high-k materials Metal gates Interface engineering (thickness & composition) Hydrogen and nitrogen at SiON interfaces (NBTI) Substrate engineering (strained Si, Si orientations, Si/SiGe, SOI) Defects in nanoscale devices Energy deposition via Radsafe/MRED
Impact of new device technologies on radiation response
SiGe HBTs Strained Si CMOS Ultra-small bulk CMOS Mobility in ultra-thin film SOI MOSFETs TID response in scaled SOI CMOS Multiple gate/FinFET devices Multi-scale hierarchical analysis of single-event effects
Single-event effects in new technologies and ultra-small devices
Development/application of integrated simulation tool suite
Applications in all tasks
Effects of passivation/metallization on SEE Tensor-dependent transport for SEE Extreme event analysis Spatial and energy distribution of e-h pairs Energy deposition in small device volumes
Displacement-damage and totaldose effects in ultra-small devices
Physical models of displacement single events Microdose/displacement SEE in SiGe and CMOS devices Single-transistor defect characterization Link energy deposition to defects through DFT molecular dynamics Multiple-device displacement events Dielectric leakage/rupture
10
2.6 nm (Equiv. Oxide Thick. ) Al2O3 3.3 nm SiO2(15%N) 5.4 nm 3.3 nm (Physical) SiO2 Al2O3
8
VBD (V)
6
2.2 nm SiO2 SiO2 Data From Sexton at al . 1998
'06 '09
'03
'01
'97
VDD from National Technology Roadmaps 0 0
10 Film Thickness (nm)
15
20
Collaborators
IBM
SiGe, CMOS, metal gate, high-k
SRC/Sematech
CMOS, metal gate, high-k, FinFETs
Intel
Strained Si and Ge channels, tri-gate, high-k, metal gate
Sandia Labs
Alternative dielectrics, thermally stimulated current
Texas Instruments
CMOS
NASA/DTRA
Radiation-effects testing
Freescale
BiCMOS and SOI
Oak Ridge National Laboratory
Atomic-scale imaging
Jazz
SiGe
CFDRC
Software development
National
SiGe
