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SCR - Silicon Controlled Rectifier

The SCR (silicon controlled rectifier) is used for controlling electrical power delivery through solid state switching. It provides power control that is smaller, cheaper, and more efficient than traditional variable transformers or rheostats. The SCR controls current through a PNPN junction that latches into a conducting state when a brief positive gate current is applied, allowing current to flow until it drops below the holding current level. Modern SCRs can control high currents and voltages for applications like lighting, motor speed control, welding, and heating.
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0% found this document useful (0 votes)
324 views13 pages

SCR - Silicon Controlled Rectifier

The SCR (silicon controlled rectifier) is used for controlling electrical power delivery through solid state switching. It provides power control that is smaller, cheaper, and more efficient than traditional variable transformers or rheostats. The SCR controls current through a PNPN junction that latches into a conducting state when a brief positive gate current is applied, allowing current to flow until it drops below the holding current level. Modern SCRs can control high currents and voltages for applications like lighting, motor speed control, welding, and heating.
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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SCR – Silicon Controlled Rectifier

SCR – Silicon Controlled Rectifier


• Lighting, motor speed control, electric welding
and electric heating all demand the delivery of a
variable and controlled amount of electrical
power
• Tradition delivery methods employed using
variable transformers or rheostats in series with
load
• These solutions are usually bulky and expensive
in terms of power wastage
SCR – Silicon Controlled Rectifier
• Silicon controlled-rectifier (SCR) is part of the
thyristor family that are used in high-power
electronic switching circuits
• SCR has been used for power control with none
of the above faults
• Advantages: small, inexpensive, needs no
maintenance, and wastes very little power
• Some modern SCRs can control currents of
several hundred amperes and voltages higher
than 1000 V
SCR – Silicon Controlled Rectifier

The PNPN junction Schematic symbol for a silicon-controlled


rectifier

• The silicon controlled-rectifier (SCR) is often


referred to as a PNPN junction because of its
composition
• The schematic symbol is the same as the diode
except for the added gate lead
Silicon Controlled-Rectifier
• The anode is composed of P-type material
• The cathode is composed of N-type material
• The gate is made of P-type substrate
• Below is the transistor NPN and PNP equivalent
circuit

Gate
Silicon Controlled-Rectifier
• The SCR is a latching device that requires a
small value of positive gate current for a brief
instant to switch on
• The amount of gate gate current required to
switch on an SCR is called the gate-trigger
current, IGT
• Once the SCR has been switched on, it will
remain on as long as a minimum value of current,
called the holding current, flows between the
anode and the cathode
Silicon Controlled-Rectifier

• When a positive current is applied to the base of


transistor Q2, Q2 turns on
• The collector of Q2 drives the base of Q1
negative, forward biasing the emitter-base
junction of Q1
Silicon Controlled-Rectifier
• Current then flows at the base of Q1 and Q1
conducts
• If the gate is now disconnected, current will
continue to flow at the base of Q2 through the
collector of Q1
• Therefore the two transistors hold each other in
the conducting state, allowing a continuous flow
of current between the anode and cathode
SCR Characteristic Curve

• Initially as VF is increased, the SCR conducts


only a small amount of leakage current
• As VF increases, eventually the breakover voltage
is reached and latches into the conducting state
SCR Characteristic Curve
• The forward breakover voltage represents the
point where the SCR switches from a non-
conducting state to a conducting state with no
triggering gate signal
• The SCR is usually triggered at a value below
the breakover voltage
• The reverse breakdown voltage is equivalent to
the avalanche region of a diode
• Under normal operation, this voltage should not
be exceeded
SCR Characteristics

• Forward Operating Region - This is the ON state or the forward


conduction region between the anode and the cathode. There is very
little opposition to the flow of current.

• Forward-Breakover Voltage VBR(F) - Once this voltage is


exceeded, the SCR is forward biased and enters the forward operating
region. The value of VBR(F) is maximum when the gate current is
zero (IG = 0). With a gate current, the value of VBR(F) decreases as
the value of gate current increases.

• Forward Blocking Region - This is the OFF condition of the SCR.


The forward current from the anode to cathode is blocked due to an
effective open circuit of the SCR.
SCR Characteristics
• Reverse Blocking Voltage - This is the OFF condition of the SCR
during reverse bias conditions.

• Reverse Breakdown Region VBR(R) - This is the same as the


Zener or avalanche region of a semi-conductor diode.

• Holding Current (IH) - Once the anode current drops below this
level, the SCR is no longer in the forward operating region, but is in
the OFF or forward blocking region.

• Gate Trigger Current (IGT) - The value of gate current that


switches the SCR from the forward blocking region to the forward
operating region.
SCR – Application Example

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