Scribd
Upload
13 views9 pages

Finfet 1 T

FinFET (Fin Field Effect Transistor) is a 3D transistor design that addresses the limitations of traditional MOSFETs, offering improved channel control, reduced leakage current, and scalability for modern electronics. It is widely adopted in high-speed, energy-efficient processors by major companies like Intel and TSMC. FinFET technology is essential for advancing VLSI systems and supports low-voltage, high-performance applications in devices such as smartphones and AI technologies.

Uploaded by

anshpandey622
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
13 views9 pages

Finfet 1 T

FinFET (Fin Field Effect Transistor) is a 3D transistor design that addresses the limitations of traditional MOSFETs, offering improved channel control, reduced leakage current, and scalability for modern electronics. It is widely adopted in high-speed, energy-efficient processors by major companies like Intel and TSMC. FinFET technology is essential for advancing VLSI systems and supports low-voltage, high-performance applications in devices such as smartphones and AI technologies.

Uploaded by

anshpandey622
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
You are on page 1/ 9

Exploring FINFET

Roll no-72
sub-VLSI
prof. A.N.BHATT
Introduction
 FinFET (Fin Field Effect Transistor) is a modern 3D transistor design
used to overcome the limitations of traditional MOSFETs. It offers
better control over the channel, reduces leakage current, and supports
scaling to smaller technology nodes, making it ideal for today’s low-
power, high-performance electronics.

 FinFET technology emerged as a scalable solution that supports Moore’s


Law even in advanced nodes.It is now widely adopted by companies
like Intel, TSMC, and Samsung for producing high-speed, energy-
efficient processors.

goggle.com
Need for FinFET Technology
 As MOSFETs are scaled down to nanometer dimensions, they experience
various issues such as short channel effects, high leakage current, and poor
electrostatic control.

 In smaller nodes, the distance between source and drain reduces, weakening the
gate's ability to control the channel.

 FinFETs solve this by providing a multi-gate design, which strengthens gate


control and suppresses leakage.

 Thus, FinFETs are a necessary advancement for reliable transistor operation in


modern VLSI systems
Feature Planar MOSFET FinFET

Gate Control One side only Multi-side (3D)

Leakage Current High in small nodes Very low

Channel Control Weak below 22nm Strong and stable

Power Efficiency Less efficient High efficiency

Fabrication Simple Complex but scalable


FinFET Structure and
Operation
 The fin is the conducting channel, shaped vertically on the

substrate.

 A wrap-around gate controls current from multiple sides of the fin.

 Effective channel width is controlled by fin height and number of

fins.

 Stronger gate control = better ON/OFF current ratio (Ion/Ioff).

 Enables low-voltage, high-frequency operation with reduced power


openai.com
Working of FinFET
 Gate voltage controls current flow through the fin channel for better transistor
operation.

 The 3D gate structure creates a stronger electric field, enhancing channel


control.

 This improves switching with higher drive current (Ion) and reduces leakage
current (Ioff).

 FinFETs are ideal for low-voltage, energy-efficient, and high-performance


applications.

openai.com
Applications of FinFET
 Used in smartphones, CPUs, GPUs, and SoCs.

 Essential for AI, 5G, and IoT devices.

 Adopted by Intel, TSMC, AMD, Apple, and others.

 Key in 7nm, 5nm, and 3nm fabrication technologies.

 Supports high-density, low-power IC designs.


Conclusion
 FinFET solves scaling issues of MOSFETs in nano dimensions.

 Offers better control, reduced leakage, and high performance.

 Forms the base of modern semiconductor devices.

 Crucial for energy-efficient and compact electronics.

 Future: GAA FETs and nanosheet transistors


THANK YOU
Refrences:
 www.wikipidia.com
 goggle.com
 openai.com

You might also like