Supervised By:
Dr. Shaista Shehzada
Presented By:
                                           Wasifa
Zulfiqar:1121-FBAS/MSCPHY/F20
                  Namra Altaf:1127-FBAS/MSCPHY/F20
                                          Ambreen
Bashir:1128-FBAS/MSCPHY/F20
        Project Title
Study of Ga doped ZnO nanostructures
        through Laser Ablation
       Outline
        Introduction
 Introduction of Zinc Oxide
 Applications of Zinc Oxide
  Introduction of Gallium
   Application o Gallium
         Laser Ablation
      Experimental Setup
 Characterization Techniques
        X-ray Diffraction
      Photoluminescence
      UV-Vis Spectroscopy
    Results and Discussion
          Conclusion
       INTRODUCTION
 What is nanotechnology?
 What are nano-particle?
 Properties of Nano-particles
             Size
 High surface or volume ratio
 Introduction of Zinc Oxide
• Zinc oxide is a white colored inorganic compound that is insoluble
  in water.
• It is naturally found as a mineral zincite.
• It has a direct band gap (3.3eV) at room temperature.
• It can absorb UV-visible light.
Structure:
                                                                       ZnO
                                    Structure of
                                    ZnO
Introduction of Gallium
• Gallium is a blue-grey metal with a orthorhombic structure.
• Atomic number is 31.
• Gallium is a soft, silvery metal in standard temperature and pressure.
• Belongs to group 13 of periodic table.
• It has high boiling point 2204ºC.
                                                                       Gallium
Applications of Gallium
• Mobile Phones
• LED’s (Blue and Green)
• Alloys
• Pressure sensors for touch switches
• Radar
• Space
                                        Laser Ablation
• Laser Ablation or Photoablation is the process of removing material from a solid
    surface by irradiating it with a laser beam.
    Working:
•    It produces nanoparticles by using a powerful laser beam that hits
     the target material.
• During this process, the precursor (source material) vaporizes due
  to the high energy of the laser irradiation and it results in
  nanoparticle formation.
                        Experimental
                         Parameters
Sample     Wavelengt   Energy   Time   Repetiti   Pulse    Pulse
  No.         h          mJ     min    on rate    width   duration
             nm                          Hz        ns        ns
Sample 1     1064       40      30       10         5        6
 Ga-ZnO
   40
Sample 2     1064       50      30        10        5        6
 Ga-ZnO
   50
Characterization Techniques
        X-Ray Diffraction
      Photo Luminescence
     UV-Visible Spectroscopy
X-Ray Diffraction: (XRD)
• (XRD) is a technique used in materials science to determine the
  crystallographic structure of a material.
• Find average spacing between layers or rows of atoms.
• Used to find crystallite size and shape.
• Crystal structure of an unknown substance .
•   The crystallite size of nanoparticles is calculated by Debye Scherrer formula
• which is given as
•                         D=(kλ/β cos θ)
          XRD Graphs
                                   2θ       θ     COS θ   FWHM     D      Davg
                   Ga-
                  40 mJ           30.12   15.06   0.965   0.051   28.05   24.67
                                                            2
                                  32.29   16.14   0.960           22.55     -
                                                          0.064
                                                          0
                                  36.87   18.43   0.948   0.062   23.42     -
                                                            4
Fig.1 XRD spectrum of Ga-ZnO 40
XRD Graph
                                    Table
                    2θ       θ     COSθ FWHM         D      Davg
                   32.27   16.13   0.690    0.062   23.13   28.63
                                              4
                   35.02   17.51   0.953    0.046   31.07     -
                                              8
                   36.83   18.41   0.948    0.046   31.23     -
                                              8
                   48.14   24.07   0.913    0.046   32.43     -
                                              8
                   57.20   28.51   0.878    0.062   25.29     -
        Sample 2                              4
Photo Luminescence:
• Photoluminescence is the emission of light
  which is caused by the irradiation of material
  with other light.
• In Photoluminescence, light is directed onto a
  sample where it is absorbed and where a
  process called photo-excitation can occur.
• Photoluminescence spectroscopy is a widely
  used technique for characterization of the
  optical and electronic properties such as
  excitation and defects.
                                                   Photo
                                                   Luminescence
PhotoLuminescence (PL)
                  Sample     Maximum    Band Gap
                    No.        peak        (eV)
                             position
                               (nm)
                  Sample 1    488 nm    2.59 eV
                   Ga-40
                  Sample 2     482 nm   2.57 eV
                   Ga-50
UV-Visible Spectroscopy:
• UV-Visible spectroscopy is the
  attenuation of a beam of light
  passing through a sample or after
  reflection from sample surface.
• Spectroscopy is the study of
  interaction between light and
  matter.
                                       UV-Visible
                                      Spectroscopy
                          UV-Visible Spectroscopy
Fig.5 UV-Vis Absorbance                      Fig.6 UV-Vis spectrum of Ga-ZnO 40
spectrum of Ga-ZnO 40
                          UV-Visible Spectroscopy
Fig.7 UV-Vis Absorbance spectrum of                 Fig.8 UV-Vis spectrum of Ga-
Ga-ZnO 50                                           ZnO 50
Conclusion
s:
 XRD data showed the
 UV Visible spectroscopy.
 PL measure