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Physical Explanation for the Higher Sensitivity to Ion-Induced Burnout in SiC Schottky Diodes Compared to Si Schottky Diodes
/ Marques, C M (Montpellier U.) ; Michez, A (Montpellier U.) ; Wrobel, F (Montpellier U.) ; Kuboyama, S (Unlisted, CH) ; Saigné, F (Montpellier U.) ; Dilillo, L (Montpellier U.) ; Aguiar, Y Q (CERN) ; Alía, R G (CERN)
SiC has a higher critical electric field compared to Si, which is promising for power applications. However, the susceptibility of SiC Schottky barrier diodes (SBDs) to heavy ions is recognized as a critical issue due to single event burnout (SEB) and single event leakage current (SELC). [...]
2025 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 72 (2025) 2411-2418
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2.
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SRAM-based heavy ion beam flux and LET dosimetry
/ Coronetti, Andrea (CERN ; IES, Montpellier) ; García-Alía, Rubén (CERN) ; Dilillo, Luigi (LIRMM, Montpellier) ; Imianosky, Carolina (IES, Montpellier) ; Dos Santos, Douglas Almeida (IES, Montpellier) ; Luza, Lucas Matana (LIRMM, Montpellier ; SENAI/CETIQT, Rio de Janeiro) ; Bosser, Alexandre (LIRMM, Montpellier ; Unlisted, FR) ; Bilko, Kacper (CERN) ; Waers, Andreas (CERN) ; Klimek, Karolina (CERN) et al.
This paper explores the possibility of enhancing the capability of static random access memories (SRAMs) as heavy ion beam detectors starting from the multiple-cell upsets (MCUs) measured in some well characterized beams. In particular, the two main enablers brought by the MCU analysis are (1) the determination of the beam flux even when the LET of the beam is not known [whenever the LET is > 10 MeV/(mg/cm2)] and (2) the estimation of the LET of the heavy ion beam without reliance on any other instrument [...]
2024 - 8 p.
- Published in : 10.1109/tns.2024.3487647
Fulltext: PDF;
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3.
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Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells
/ Marques, Cleiton M (IES, Montpellier) ; Wrobel, Frédéric (IES, Montpellier) ; Aguiar, Ygor Q (CERN) ; Michez, Alain (IES, Montpellier) ; Saigné, Frédéric (IES, Montpellier) ; Boch, Jérôme (IES, Montpellier) ; Dilillo, Luigi (IES, Montpellier) ; Alía, Rubén García (CERN)
Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding of post-irradiation data. [...]
2024 - 16 p.
- Published in : Electronics 13 (2024) 1954
Fulltext: PDF;
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4.
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5.
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Design and Characterization of a Radiation-Tolerant Wireless Physical Layer for Control Applications in CERN Particle Accelerators
/ Scialdone, Antonio (CERN ; IES, Montpellier) ; Ferraro, Rudy (CERN) ; Danzeca, Salvatore (CERN) ; Saigne, Frederic (IES, Montpellier) ; Boch, Jérôme (IES, Montpellier) ; Dilillo, Luigi (IES, Montpellier ; U. Montpellier, L2C) ; Masi, Alessandro (CERN)
The article explores the design and radiation characterization of a wireless physical layer (PHY) specifically tailored for equipment control in harsh radiation environments, such as those in particle accelerators like the large hadron collider
(LHC). The PHY, built with commercial-off-the-shelf (COTS), leverages a software-defined radio (SDR), which, compared to dedicated transceivers, provides more flexibility and enables enhanced reliability through mitigation techniques. [...]
2025 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 72 (2025) 1068-1076
Fulltext: PDF; External links: Fulltext; Fulltext
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6.
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Enhancement of System Observability During System-Level Radiation Testing Through Total Current Consumption Monitoring
/ Slipukhin, Ivan (CERN) ; Coronetti, Andrea (CERN) ; Alía, Rubén García (CERN) ; Saigné, Frédéric (IES, Montpellier) ; Boch, Jérôme (IES, Montpellier) ; Dilillo, Luigi (IES, Montpellier) ; Aguiar, Ygor Q (CERN) ; Cazzaniga, Carlo ; Kastriotou, Maria ; Dodd, Torran
System-level testing of electronics is an affordable method of assessment of the performance of complete electronic systems designed for applications in the radiation environment. Compared to component-level testing, system-level test offers a much smaller degree of observability about the performance of particular system elements. [...]
2024 - 8 p.
- Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1948-1955
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7.
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The CELESTA CubeSat In-Flight Radiation Measurements and Their Comparison With Ground Facilities Predictions
/ Coronetti, Andrea (CERN) ; Zimmaro, Alessandro (CERN) ; Alía, Rubén García (CERN) ; Danzeca, Salvatore (CERN) ; Masi, Alessandro (CERN) ; Slipukhin, Ivan (CERN) ; Amodio, Alessio (CERN) ; Dijks, Jasper (CERN) ; Peronnard, Paul (CERN) ; Secondo, Raffaello (CERN) et al.
The CELESTA CubeSat has employed radiation monitors developed by the Conseil Européen pour la Recherche Nucléaire (CERN) Centre, used for measuring the radiation environment at accelerators, to measure the space radiation field in a medium-Earth orbit (MEO). The technology is based on three static random-access memories (SRAMs) that are sensitive to single-event upsets (SEUs) and single-event latchups (SELs). [...]
2024 - 8 p.
- Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1623-1630
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8.
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Comparison of High Energy X-Ray and Cobalt-60 Irradiations on MOS Capacitors
/ Girones, Vincent (Montpellier U.) ; Boch, Jérôme (Montpellier U.) ; Saigné, Frédéric (Montpellier U.) ; Carapelle, Alain (CERN) ; Chapon, Arnaud ; Maraine, Tadec (Montpellier U.) ; Alía, Rubén García (CERN)
The use of a high energy X-ray generator for Total Ionizing Dose (TID) testing is studied on metal-oxide semiconductor (MOS) capacitors. Several conditions were studied for the high energy X-ray irradiations (with aluminum and lead filters) and the experimental results are compared to Cobalt 60 (Co-60) irradiations. [...]
2024 - 8 p.
- Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1879-1886
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9.
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Characterization of Fragmented Ultrahigh-Energy Heavy Ion Beam and Its Effects on Electronics Single-Event Effect Testing
/ Barbero, Mario Sacristán (CERN ; IES, Montpellier) ; Slipukhin, Ivan (CERN ; IES, Montpellier) ; Cecchetto, Matteo (CERN) ; Prelipcean, Daniel (CERN) ; Aguiar, Ygor (CERN) ; Bilko, Kacper (CERN) ; Emriskova, Natalia (CERN) ; Waets, Andreas (CERN) ; Coronetti, Andrea (CERN) ; Kastriotou, Maria (Rutherford Appleton Laboratory) et al.
Ultrahigh-energy (UHE) (>5 GeV/n) heavy ion beams exhibit different properties when compared to standard and high-energy ion beams. Most notably, fragmentation is a fundamental feature of the beam that may have important implications for electronics testing given the ultrahigh energies and, hence, ranges, preserved by the fragments. [...]
2024 - 8 p.
- Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1557-1564
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10.
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Impact of flux selection, pulsed beams and operation mode on system failure observability during radiation qualification
/ Zimmaro, Alessandro (CERN ; IES, Montpellier) ; Ferraro, Rudy (CERN) ; Boch, Jérôme (IES, Montpellier) ; Saigné, Frédéric (IES, Montpellier) ; García Alía, Rubén (CERN) ; Masi, Alessandro (CERN) ; Danzeca, Salvatore (CERN)
Systems and Systems on Chip (SoCs) under radiation can have complex failure modes with different probabilities. [...]
2022. - 8 p.
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