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Defects and acceptor removal in $^{60}$Co $\gamma$-irradiated $p$-type silicon / Himmerlich, Anja (CERN) ; Castelló-Mor, Núria (Cantabria Inst. of Phys.) ; Currás-Rivera, Esteban (CERN) ; Gurimskaya, Yana (CERN) ; Mateu, Isidre (CERN) ; Moll, Michael (CERN) ; Peters, Karol Pawel (CERN) ; Sorgenfrei, Niels (CERN ; Freiburg U., Inst. Phys. Chem.) ; Wiehe, Moritz (CERN) ; Nitescu, Andrei (Bucharest U.) et al.
Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the active boron dopant. This effect, known as the so-called Acceptor Removal Effect (ARE), depends on particle type, particle energy and radiation dose and is usually explained by the formation of boroninterstitial - oxygen-interstitial (BiOi) defects that induce a donor-type defect level in the upper part of the Si band gap. [...]
arXiv:2505.20790.- 2025-07-26 - 17 p. - Published in : Nucl.Instrum.Meth.A 1081 (2026) 170886 Fulltext: 2505.20790 - PDF; Published version - PDF;

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Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors / Himmerlich, Anja (CERN) ; Castello-Mor, Nuria (CERN) ; Rivera, Esteban Curras (CERN) ; Gurimskaya, Yana (CERN) ; Maulerova-Subert, Vendula (CERN ; Hamburg U.) ; Moll, Michael (CERN) ; Pintilie, Ioana (Bucharest U.) ; Fretwurst, Eckhart (Hamburg U.) ; Liao, Chuan (Hamburg U.) ; Schwandt, Jorn (Hamburg U.)
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation on the highly boron-doped gain layer that enables the internal charge multiplication, is of special interest, since due to the so-called Acceptor Removal Effect (ARE) a radiation-induced deactivation of active boron dopants takes place. [...]
arXiv:2209.07186.- 2022-12-22 - Published in : Nucl. Instrum. Methods Phys. Res., A 1048 (2023) 167977 Fulltext: PDF;

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TCAD Device Simulations of Irradiated Silicon Detectors / Palomo Pinto, Francisco Rogelio (Seville U.) ; Moll, Michael (CERN) ; Schwandt, Jörn (Hamburg U.) ; Villani, E Giulio (Rutherford) ; Gurimskaya, Yana (CERN) ; Millán, Rafael (Seville U.)
The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. [...]
SISSA, 2020 - 12 p. - Published in : PoS Vertex2019 (2020) 051 Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.051

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Vegeu també: autors amb noms similars
20	Schwandt, J
28	Schwandt, J.
1093	Schwandt, Joern
6	Schwandt, Jorn

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