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I. N. Osiyuk

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2000 – 2009

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2007
[j2]
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  dblp key:
  - journals/mr/TyagulskyyOLNHBLPC07
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  - https://dblp.org/rec/journals/mr/TyagulskyyOLNHBLPC07
I. P. Tyagulskyy, I. N. Osiyuk, V. S. Lysenko, A. N. Nazarov, Steve Hall, Octavian Buiu, Y. Lu, Richard Potter, Paul R. Chalker:
Charge trapping characterization of MOCVD HfO₂/p-Si interfaces at cryogenic temperatures. Microelectron. Reliab. 47(4-5): 726-728 (2007)
2002
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A. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, Lars Rebohle, W. Skorupa:
Charge trapping and degradation in Ge⁺ ion implanted SiO₂ layers during high-field electron injection. Microelectron. Reliab. 42(9-11): 1461-1464 (2002)

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