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Vincenzo Della Marca

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2020 – today

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2023
[c9]
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  - conf/essderc/HabhabMMMPJKMLVRNR23
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Radouane Habhab, Vincenzo Della Marca, Pascal Masson, Nadia Miridi, Clement Pribat, Simon Jeannot, Thibault Kempf, Marc Mantelli, Philippe Lorenzini, Jean-Marc Voisin, Arnaud Régnier, Stephan Niel, Francesco La Rosa:
40nm SONOS Embedded Select in Trench Memory. ESSDERC 2023: 21-24
2021
[c8]
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  - conf/dtis/GayMARNM21
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Romeric Gay, Vincenzo Della Marca, Hassen Aziza, Arnaud Régnier, Stephan Niel, Abderrezak Marzaki:
Benchmarking and optimization of trench-based multi-gate transistors in a 40 nm non-volatile memory technology. DTIS 2021: 1-4
[c7]
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  - conf/imw2/MelulKMBATMRNR21
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Franck Melul, Thibault Kempf, Vincenzo Della Marca, Marc Bocquet, Madjid Akbal, Frederique Trenteseaux, Marc Mantelli, Arnaud Régnier, Stephan Niel, Francesco La Rosa:
Hot Electron Source Side Injection Comprehension in 40nm eSTM™. IMW 2021: 1-4
[c6]
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  - conf/vlsi/GasquezGBMMWP21
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J. Gasquez, Bastien Giraud, P. Boivin, Y. Moustapha-Rabault, Vincenzo Della Marca, Jean-Pierre Walder, Jean-Michel Portal:
A Self-referenced and regulated sensing solution for PCM with OTS selector. VLSI-SoC 2021: 1-6
[c5]
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J. Gasquez, Bastien Giraud, P. Boivin, Y. Moustapha-Rabault, Vincenzo Della Marca, Jean-Michel Walder, Jean-Michel Portal:
A Regulated Sensing Solution Based on a Self-reference Principle for PCM + OTS Memory Array. VLSI-SoC (Selected Papers) 2021: 225-243
2020
[c4]
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  - conf/irps/LocatiMRRNC20
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Jordan Locati, Vincenzo Della Marca, Christian Rivero, Arnaud Régnier, Stephan Niel, Karine Coulié:
AC stress reliability study of a new high voltage transistor for logic memory circuits. IRPS 2020: 1-5

2010 – 2019

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2019
[c3]
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  - conf/nvmts/Postel-Pellerin19
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Jérémy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca, Adnan Harb:
True random number generation exploiting SET voltage variability in resistive RAM memory arrays. NVMTS 2019: 1-5
2018
[j3]
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  - journals/mr/MarcaPKRCB18
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Vincenzo Della Marca, Jérémy Postel-Pellerin, Thibault Kempf, Arnaud Régnier, Philippe Chiquet, Marc Bocquet:
Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction. Microelectron. Reliab. 88-90: 159-163 (2018)
[c2]
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Thibault Kempf, Vincenzo Della Marca, L. Baron, F. Maugain, Francesco La Rosa, Stephan Niel, Arnaud Régnier, Jean-Michel Portal, Pascal Masson:
Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip. IRPS 2018: 6
2014
[j2]
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  - journals/mr/MarcaPJCO14
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Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier:
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories. Microelectron. Reliab. 54(9-10): 2262-2265 (2014)
2013
[c1]
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  - conf/essderc/RebuffatMMOMPLL13
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Benjamin Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Olivier Paulet, Laurent Lopez, Romain Laffont:
Effect of ions presence in the SiOCH inter metal dielectric structure. ESSDERC 2013: 218-221
2012
[j1]
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  - journals/jolpe/JustMROPPM12
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Guillaume Just, Vincenzo Della Marca, Arnaud Régnier, Jean-Luc Ogier, Jérémy Postel-Pellerin, Jean-Michel Portal, Pascal Masson:
Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability. J. Low Power Electron. 8(5): 717-724 (2012)

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