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Shiwei Feng 0001
Person information
- affiliation: Beijing University of Technology, Institute of Semiconductor Device Reliability Physics, Beijing, China
Other persons with the same name
- Shiwei Feng 0002
— Purdue University, Department of Computer Science, West Lafayette, IN, USA (and 1 more)
- Shiwei Feng 0003 — Wuhan University, School of Computer Science, Hubei Key Laboratory of Multimedia and Network Communication Engineering, NERCMS, China
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2020 – today
- 2024
- [j14]Xiujuan Huang, Chunsheng Guo, Qian Wen, Shiwei Feng, Yamin Zhang
Temperature rise detection in GaN high-electron-mobility transistors via gate-drain Schottky junction forward-conduction voltages. Microelectron. J. 148: 106200 (2024) - [j13]Zhanwu Yao
Automatic in-situ measurement of thermal resistance for GaN HEMTs. Microelectron. J. 149: 106245 (2024) - [j12]Shijie Pan
A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage. IEEE Trans. Instrum. Meas. 73: 1-12 (2024) - 2023
- [j11]Kun Bai
A numerical calibration of structure-function transient thermal measurement based on Cauer RC network. Microelectron. J. 135: 105742 (2023) - [j10]Xianwei Meng
Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection. IEEE Trans. Instrum. Meas. 72: 1-9 (2023) - 2021
- [j9]Sheng Wang, Shiwei Feng, Yuxuan Xiao, Chaoxu Hu, Shijie Pan
Build-in compact and efficient temperature sensor array on field programmable gate array. Microelectron. J. 111: 105018 (2021)
2010 – 2019
- 2017
- [j8]Jingwei Li, Shiwei Feng, Yamin Zhang, Chao Wang, Xin He:
Optimized thermal sensor allocation for field-programmable gate array temperature measurements based on self-heating test. Microelectron. J. 60: 55-59 (2017) - [j7]Zhiheng Liao
Thermal evaluation of GaN-based HEMTs with various layer sizes and structural parameters using finite-element thermal simulation. Microelectron. Reliab. 74: 52-57 (2017) - [c1]Chunsheng Guo, Ju Meng, Zhiheng Liao
Influence of heat source size on thermal resistance of AlGaN/GaN HEMT. ASICON 2017: 299-302 - 2016
- [j6]Xiang Zheng
Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy. Microelectron. Reliab. 63: 46-51 (2016) - 2015
- [j5]Dong Shi, Shiwei Feng, Yamin Zhang, Yanbin Qiao, Bing Deng:
Thermal investigation of LED array with multiple packages based on the superposition method. Microelectron. J. 46(7): 632-636 (2015) - [j4]Hui Zhu, Kun Liu, Cong Xiong, Shiwei Feng, Chunsheng Guo:
The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes. Microelectron. Reliab. 55(1): 62-65 (2015) - [j3]Yuan Yue, Shiwei Feng, Chunsheng Guo, Xin Yan, Rui-Rui Feng:
All-digital thermal distribution measurement on field programmable gate array using ring oscillators. Microelectron. Reliab. 55(2): 396-401 (2015) - [j2]Kun Liu, Hui Zhu, Shiwei Feng, Lei Shi, Yamin Zhang, Chunsheng Guo:
The effect of external stress on the electrical characteristics of AlGaN/GaN HEMTs. Microelectron. Reliab. 55(6): 886-889 (2015) - 2013
- [j1]Yamin Zhang
Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs. Microelectron. Reliab. 53(5): 694-700 (2013)
Coauthor Index
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