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Sudhansu Kumar Pati

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2010 – 2019

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2016
[j4]
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Sanjit Kumar Swain, Arka Dutta, Sarosij Adak, Sudhansu Kumar Pati, Chandan Kumar Sarkar:
Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs. Microelectron. Reliab. 61: 24-29 (2016)
2015
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Sanjit Kumar Swain, Sarosij Adak, Bikash Sharma, Sudhansu Kumar Pati, Chandan Kumar Sarkar:
Effect of Channel Thickness and Doping Concentration on Sub-Threshold Performance of Graded Channel and Gate Stack DG MOSFETs. J. Low Power Electron. 11(3): 366-372 (2015)
2014
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Sudhansu Kumar Pati, Kalyan Koley, Arka Dutta, N. Mohankumar, Chandan Kumar Sarkar:
Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs. Microelectron. Reliab. 54(6-7): 1137-1142 (2014)
[j1]
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Sanjit Kumar Swain, Sarosij Adak, Sudhansu Kumar Pati, Hemant Pardeshi, Chandan Kumar Sarkar:
Analysis of flicker and thermal noise in p-channel Underlap DG FinFET. Microelectron. Reliab. 54(8): 1549-1554 (2014)

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