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Gyuseong Kang
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2020 – today
- 2024
- [c6]Gyuseong Kang, Hyunjin Shin, Sanggyeong Won, Dohui Kim, Kyuseong Kim, Soohoh Seol, Sunkyu Lee, Hangil Lee, Yeonho Jung, Jaechul Shim, Kiseok Suh, Sohee Hwang, Daehyun Jang, Sangyeop Baeck, Sei Seung Yoon:
A 14nm 128Mb eMRAM Implemented with 17.88Mb/mm2 at 0.60V for Auto-G1 Applications. VLSI Technology and Circuits 2024: 1-2 - [c5]Joosung Oh, Jaehyeon Park, Kiseok Suh, Kangmoon Lee, Sohee Hwang, Myeongjun Bak, Honghyun Kim, Baeseong Kwon, DongKyu Lee, Minkwan Kim, Seungmo Noh, Jongmin Lee, Soomin Cho, Gyuseong Kang, Hyun-Jin Shin, Yongsung Ji, Atsushi Okada, Ung-Hwan Pi, Kwangseok Kim, Younghyun Kim, Jeong-Heon Park, Seungpil Ko, Tae-Young Lee, Kyungtae Nam, Minkwon Cho, Boyoung Seo, Shinhee Han, Yoonjong Song, Kangho Lee, Ja-Hum Ku:
14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c4]Gyuseong Kang, Hyunjin Shin, Hyuntaek Jung, Sunkyu Lee, Jaeseung Choi, Sangyeop Baeck, Hyunsung Jung, Daeshik Kim, Sohee Hwang, Shinhee Han, Yongsung Ji, Sei Seung Yoon:
A 14nm 128Mb Embedded MRAM Macro achieved the Best Figure-Of-Merit with 80MHz Read operation and 18.1Mb/mm² implementation at 0.64V. VLSI Technology and Circuits 2023: 1-2 - 2022
- [j4]Yunho Jang, Gyuseong Kang, Taehwan Kim, Yeongkyo Seo, Kyung-Jin Lee, Byong-Guk Park, Jongsun Park:
Stochastic SOT Device Based SNN Architecture for On-Chip Unsupervised STDP Learning. IEEE Trans. Computers 71(9): 2022-2035 (2022)
2010 – 2019
- 2019
- [j3]Gyuseong Kang, Jongsun Park:
Charge-Recycling-Based Redundant Write Prevention Technique for Low-Power SOT-MRAM. IEEE Trans. Very Large Scale Integr. Syst. 27(6): 1343-1352 (2019) - 2018
- [c3]Gyuseong Kang, Yunho Jang, Jongsun Park:
Charge-Recycling based Redundant Write Prevention Technique for Low Power SOT-MRAM. ISCAS 2018: 1-4 - [c2]Gyuseong Kang, Yunho Jang, Jongsun Park:
Spin Orbit Torque Device based Stochastic Multi-bit Synapses for On-chip STDP Learning. ISLPED 2018: 21:1-21:6 - 2017
- [j2]Gyuseong Kang, Woong Choi, Jongsun Park:
Embedded DRAM-Based Memory Customization for Low-Cost FFT Processor Design. IEEE Trans. Very Large Scale Integr. Syst. 25(12): 3484-3494 (2017) - [c1]Qianying Tang, Chen Zhou, Woong Choi, Gyuseong Kang, Jongsun Park, Keshab K. Parhi, Chris H. Kim:
A DRAM based physical unclonable function capable of generating >1032 Challenge Response Pairs per 1Kbit array for secure chip authentication. CICC 2017: 1-4 - 2015
- [j1]Woong Choi, Gyuseong Kang, Jongsun Park:
A Refresh-Less eDRAM Macro With Embedded Voltage Reference and Selective Read for an Area and Power Efficient Viterbi Decoder. IEEE J. Solid State Circuits 50(10): 2451-2462 (2015)
Coauthor Index
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