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Paula Diaz Reigosa
2010 – 2019
- 2018
- [j10]Haoze Luo, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg:
On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition. Microelectron. Reliab. 88-90: 563-567 (2018) - [j9]Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli:
Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs. Microelectron. Reliab. 88-90: 577-583 (2018) - [j8]H. Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli:
Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. Microelectron. Reliab. 88-90: 661-665 (2018) - [j7]E. M. S. Brito, Allan Fagner Cupertino, Paula Diaz Reigosa, Yongheng Yang, Victor Flores Mendes, Heverton Augusto Pereira:
Impact of meteorological variations on the lifetime of grid-connected PV inverters. Microelectron. Reliab. 88-90: 1019-1024 (2018) - [j6]Mohsen Akbari, Amir Sajjad Bahman, Paula Diaz Reigosa, Francesco Iannuzzo, Mohammad Tavakoli Bina:
Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions. Microelectron. Reliab. 88-90: 1135-1140 (2018) - 2017
- [j5]Lorenzo Ceccarelli, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg:
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis. Microelectron. Reliab. 76-77: 272-276 (2017) - [j4]Paula Diaz Reigosa, Francesco Iannuzzo, Munaf Rahimo, Frede Blaabjerg:
Capacitive effects in IGBTs limiting their reliability under short circuit. Microelectron. Reliab. 76-77: 485-489 (2017) - [c1]Lorenzo Ceccarelli, Paula Diaz Reigosa, Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg:
Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions. IECON 2017: 4879-4884 - 2016
- [j3]Haoze Luo, Francesco Iannuzzo, Paula Diaz Reigosa, Frede Blaabjerg, Wuhua Li, Xiangning He:
Modern IGBT gate driving methods for enhancing reliability of high-power converters - An overview. Microelectron. Reliab. 58: 141-150 (2016) - [j2]Paula Diaz Reigosa, Daniel Prindle, Gontran Pâques, Silvan Geissmann, Francesco Iannuzzo, Arnost Kopta, Munaf Rahimo:
Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT. Microelectron. Reliab. 64: 524-529 (2016) - 2015
- [j1]Paula Diaz Reigosa, Rui Wu, Francesco Iannuzzo, Frede Blaabjerg:
Robustness of MW-Level IGBT modules against gate oscillations under short circuit events. Microelectron. Reliab. 55(9-10): 1950-1955 (2015)
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