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Min-Hung Lee
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2020 – today
- 2023
- [c9]Kuo-Yu Hsiang, Jia-Yang Lee, Z.-F. Lou, F.-S. Chang, Z.-X. Li, C. W. Liu, T.-H. Hou, P. Su, Min-Hung Lee
:
Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf1-xZrXO2 for Quantum Computing Applications. IRPS 2023: 1-4 - [c8]Yu-Rui Chen
First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles. VLSI Technology and Circuits 2023: 1-2 - [c7]Kuo-Yu Hsiang
FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. VLSI Technology and Circuits 2023: 1-2 - [c6]J.-Y. Lee, F.-S. Chang, Kuo-Yu Hsiang
3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c5]K.-Y. Hsiang, C.-Y. Liao, Y.-Y. Lin, Z.-F. Lou, C.-Y. Lin, J.-Y. Lee, F.-S. Chang, Z.-X. Li, H.-C. Tseng, C.-C. Wang, W.-C. Ray, T.-H. Hou, T.-C. Chen, C.-S. Chang, Min-Hung Lee
Correlation between Access Polarization and High Endurance (~ 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2. IRPS 2022: 9-1 - [c4]C.-Y. Liao, K.-Y. Hsiang
Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. VLSI Technology and Circuits 2022: 1-2 - [c3]H.-L. Chiang, J.-F. Wang, K.-H. Lin, C.-H. Nien, J.-J. Wu, Kuo-Yu Hsiang
Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array. VLSI Technology and Circuits 2022: 361-362 - 2020
- [c2]Kuan-Ting Chen, C. Lo, Y.-Y. Lin, C.-Y. Chueh, C. Chang, G.-Y. Siang, Y.-J. Tseng, Y.-J. Yang, F.-C. Hsieh, S.-H. Chang, H. Liang, S.-H. Chiang, J.-H. Liu, Y.-D. Lin, P.-C. Yeh, C.-Y. Wang, H.-Y. Yang, P.-J. Tzeng, M.-H. Liao, Shu-Tong Chang, Y.-Y. Tseng, Min-Hung Lee
Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory. IRPS 2020: 1-4
2010 – 2019
- 2018
- [j1]Pin-Guang Chen, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou, Min-Hung Lee
Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications. Sensors 18(9): 2795 (2018) - 2015
- [c1]Yu-Chien Chiu, Chun-Yen Chang, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Min-Hung Lee
Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms. IRPS 2015: 3
Coauthor Index
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