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Gaobo Xu
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2020 – today
- 2025
- [j8]Jiacheng Xu, Jiayi Zhao, Hongrui Zhang, Haoji Qian, Jiani Gu, Bowen Chen, Gaobo Lin, Rongzong Shen, Xinda Song, Huan Liu, Yian Ding, Minglei Ma, Miaomiao Zhang, Xiao Yu, Bing Chen, Ran Cheng, Gaobo Xu, Huaxiang Yin, Yan Liu, Jiajia Chen, Chengji Jin, Genquan Han:
An AND-type 1T-FeFET array with robust write and read operations. Sci. China Inf. Sci. 68(2) (2025) - 2024
- [j7]Fan Zhang, Zhaohao Zhang, Jiaxin Yao, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Huan Liu, Genquan Han, Yan Liu, Huaxiang Yin:
Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs. Sci. China Inf. Sci. 67(1) (2024) - 2023
- [j6]Zhaohao Zhang
, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang:
Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. Adv. Intell. Syst. 5(11) (2023) - [j5]Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin:
Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. Sci. China Inf. Sci. 66(10) (2023) - 2022
- [j4]Xueqin Yang, Yannan Xu, Jinshun Bi, Kai Xi, Linjie Fan
Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. Sci. China Inf. Sci. 65(6): 1-2 (2022) - 2020
- [j3]Gangping Yan
Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor. IEEE Access 8: 154898-154905 (2020) - [j2]Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang:
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Sci. China Inf. Sci. 63(12) (2020)
2010 – 2019
- 2017
- [j1]Yannan Xu, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Ming Liu:
Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. Sci. China Inf. Sci. 60(12): 120401:1-120401:3 (2017)
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