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Kyung-Soo Ha
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2020 – today
- 2020
- [j6]Kyung-Soo Ha
, Seungseob Lee, Youn-Sik Park, Hyuck-Joon Kwon, Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Jung-Bae Lee, Chang-Kyo Lee
A 7.5 Gb/s/pin 8-Gb LPDDR5 SDRAM With Various High-Speed and Low-Power Techniques. IEEE J. Solid State Circuits 55(1): 157-166 (2020)
2010 – 2019
- 2019
- [c8]Kyung-Soo Ha, Chang-Kyo Lee, Dongkeon Lee, Daesik Moon, Jin-Hun Jang, Hyong-Ryol Hwang, Hyung-Joon Chi, Junghwan Park, Seungjun Shin, Dukha Park, Sang-Yun Kim, Sukhyun Lim, Kiwon Park, YeonKyu Choi, Young-Hwa Kim, Younghoon Son, Hyunyoon Cho, Byongwook Na, Hyo-Joo Ahn, Seungseob Lee, Seouk-Kyu Choi, Youn-Sik Park, Seok-Hun Hyun, Soobong Chang, Hyuck-Joon Kwon, Jung-Hwan Choi, Tae-Young Oh, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power. ISSCC 2019: 378-380 - 2018
- [j5]Chang-Kyo Lee
Dual-Loop Two-Step ZQ Calibration for Dynamic Voltage-Frequency Scaling in LPDDR4 SDRAM. IEEE J. Solid State Circuits 53(10): 2906-2916 (2018) - [c7]Ki Chul Chun, Yonggyu Chu, Jin-Seok Heo, Tae-Sung Kim, Soohwan Kim, Hui-Kap Yang, Mi-Jo Kim, Chang-Kyo Lee, Ju-Hwan Kim, Hyunchul Yoon, Chang-Ho Shin, Sang-uhn Cha, Hyung-Jin Kim, Young-Sik Kim, Kyungryun Kim, Young-Ju Kim, Won-Jun Choi, Daesik Yim, Inkyu Moon, Young-Ju Kim, Junha Lee, Young Choi, Yongmin Kwon, Sung-Won Choi, Jung-Wook Kim, Yoon-Suk Park, Woongdae Kang, Jinil Chung, Seunghyun Kim, Yesin Ryu, Seong-Jin Cho, Hoon Shin, Hangyun Jung, Sanghyuk Kwon, Kyuchang Kang, Jongmyung Lee, Yujung Song, Youngjae Kim, Eun-Ah Kim, Kyung-Soo Ha, Kyoung-Ho Kim, Seok-Hun Hyun, Seung-Bum Ko, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process. ISSCC 2018: 206-208 - 2016
- [c6]Hye-Yoon Joo, Seung-Jun Bae, Young-Soo Sohn, Young-Sik Kim, Kyung-Soo Ha, Min-Su Ahn, Young-Ju Kim, Yong-Jun Kim, Ju-Hwan Kim, Won-Jun Choi, Chang-Ho Shin, Soo Hwan Kim, Byeong-Cheol Kim, Seung-Bum Ko, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin:
18.1 A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI monitor, jitter reduction techniques and improved power distribution. ISSCC 2016: 314-315 - 2015
- [j4]Tae-Young Oh, Hoeju Chung, Jun-Young Park, Ki-Won Lee, Seung-Hoon Oh, Su-Yeon Doo, Hyoung-Joo Kim, ChangYong Lee, Hye-Ran Kim, Jong-Ho Lee, Jin-Il Lee, Kyung-Soo Ha, Young-Ryeol Choi, Young-Chul Cho, Yong-Cheol Bae, Taeseong Jang, Chulsung Park, Kwang-Il Park, Seong-Jin Jang, Joo-Sun Choi:
A 3.2 Gbps/pin 8 Gbit 1.0 V LPDDR4 SDRAM With Integrated ECC Engine for Sub-1 V DRAM Core Operation. IEEE J. Solid State Circuits 50(1): 178-190 (2015) - [j3]Young-Ju Kim, Sang-Hye Chung, Kyung-Soo Ha, Seung-Jun Bae, Lee-Sup Kim:
A 9.6 Gb/s 0.96 mW/Gb/s Forwarded Clock Receiver With High Jitter Tolerance Using Mixing Cell Integrated Injection-Locked Oscillator. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(10): 2495-2503 (2015) - 2014
- [j2]Sang-Hye Chung, Young-Ju Kim, Kyung-Soo Ha, Seung-Jun Bae, Jung-Bae Lee, Lee-Sup Kim:
A Forwarded-Clock Receiver With Constant and Wide-Range Jitter-Tracking Bandwidth. IEEE Trans. Circuits Syst. II Express Briefs 61-II(3): 153-157 (2014) - [c5]Tae-Young Oh, Hoeju Chung, Young-Chul Cho, Jang-Woo Ryu, Kiwon Lee, Changyoung Lee, Jin-Il Lee, Hyoung-Joo Kim, Min-Soo Jang, Gong-Heum Han, Kihan Kim, Daesik Moon, Seung-Jun Bae, Joon-Young Park, Kyung-Soo Ha, Jaewoong Lee, Su-Yeon Doo, Jung-Bum Shin, Chang-Ho Shin, Kiseok Oh, Doo-Hee Hwang, Taeseong Jang, Chulsung Park, Kwang-Il Park, Jung-Bae Lee, Joo-Sun Choi:
25.1 A 3.2Gb/s/pin 8Gb 1.0V LPDDR4 SDRAM with integrated ECC engine for sub-1V DRAM core operation. ISSCC 2014: 430-431 - 2013
- [c4]Ji-Hwan Seol, Young-Ju Kim, Sang-Hye Chung, Kyung-Soo Ha, Seung-Jun Bae, Jung-Bae Lee, Joo-Sun Choi, Lee-Sup Kim:
An 8Gb/s 0.65mW/Gb/s forwarded-clock receiver using an ILO with dual feedback loop and quadrature injection scheme. ISSCC 2013: 410-411
2000 – 2009
- 2009
- [j1]Kyung-Soo Ha, Lee-Sup Kim, Seung-Jun Bae, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 0.13-µm CMOS 6 Gb/s/pin Memory Transceiver Using Pseudo-Differential Signaling for Removing Common-Mode Noise Due to SSN. IEEE J. Solid State Circuits 44(11): 3146-3162 (2009) - [c3]Kyung-Soo Ha, Lee-Sup Kim, Seung-Jun Bae, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 6Gb/s/pin pseudo-differential signaling using common-mode noise rejection techniques without reference signal for DRAM interfaces. ISSCC 2009: 138-139 - 2006
- [c2]Kyung-Soo Ha, Lee-Sup Kim:
Charge-pump reducing current mismatch in DLLs and PLLs. ISCAS 2006 - [c1]Ju-Pyo Hong, Kyung-Soo Ha, Lee-Sup Kim:
A 0.18µm CMOS 10Gb/s 1: 4 DEMUX using replica-bias circuits for optical receiver. ISCAS 2006
Coauthor Index
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