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Dong Han Ko
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2020 – today
- 2024
- [j8]Sehee Lim, Junghyeon Hwang, Dong Han Ko, Se Keon Kim, Tae Woo Oh, Sanghun Jeon, Seong-Ook Jung:
Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security. IEEE Internet Things J. 11(16): 27676-27686 (2024) - [j7]Sekeon Kim, Sehee Lim, Dong Han Ko, Tae Woo Oh, Seong-Ook Jung:
Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation. IEEE Trans. Circuits Syst. I Regul. Pap. 71(1): 274-286 (2024) - [j6]In Jun Jung, Do Han Kim, Minyoung Jo, Dong Han Ko, Young Kyu Lee, Seong-Ook Jung:
A Charge-Domain 4T2C eDRAM Compute-in-Memory Macro With Enhanced Variation Tolerance and Low-Overhead Data Conversion Schemes. IEEE Trans. Circuits Syst. II Express Briefs 71(4): 1824-1828 (2024) - [j5]Young Kyu Lee, Dong Han Ko, Seokhee Cho, Minjune Yeo, Mingu Kang, Seong-Ook Jung:
Split WL 6T SRAM-Based Bit Serial Computing-in-Memory Macro With High Signal Margin and High Throughput. IEEE Trans. Circuits Syst. II Express Briefs 71(4): 1869-1873 (2024) - 2023
- [j4]Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung:
Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices. IEEE J. Solid State Circuits 58(7): 1860-1870 (2023) - [j3]Sehee Lim, Dong Han Ko, Se Keon Kim, Seong-Ook Jung:
Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme. IEEE Trans. Circuits Syst. I Regul. Pap. 70(2): 806-818 (2023) - 2022
- [c2]Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Minki Kim, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung:
A Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF. ESSCIRC 2022: 113-116 - 2021
- [j2]Se Keon Kim, Tae Woo Oh, Sehee Lim, Dong Han Ko, Seong-Ook Jung:
High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops. IEEE Access 9: 35549-35561 (2021) - [j1]Dong Han Ko, Tae Woo Oh, Sehee Lim, Se Keon Kim, Seong-Ook Jung:
Comparative Analysis and Energy-Efficient Write Scheme of Ferroelectric FET-Based Memory Cells. IEEE Access 9: 127895-127905 (2021) - [c1]Dong Han Ko, Sehee Lim, Young Kyu Lee, Seong-Ook Jung:
High Performance and Area Efficient Ferroelectric FET based Reconfigurable Logic Circuit. ISOCC 2021: 321-322
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