A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins. - Abbasian, Erfan; Izadinasab, Farzaneh; Gholipour, Morteza (IEEE Trans. Circuits Syst. I Regul. Pap., 2022)

Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design. - Abbasian, Erfan; Gholipour, Morteza; Izadinasab, Farzaneh (Int. J. Circuit Theory Appl., 2021)

Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology. - Izadinasab, Farzaneh; Gholipour, Morteza (Microelectron. J., 2021)