Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling. - Dornic, Nausicaa; Ibrahim, Ali; Khatir, Zoubir; Tran, Son-Ha; Ousten, Jean-Pierre; Ewanchuk, Jeffrey; Mollov, Stefan (Microelectron. Reliab., 2018)

Effect of power cycling tests on traps under the gate of Al2O3/AlGaN/GaN normally-ON devices. - Elharizi, Malika; Zaki, Fadi; Ibrahim, Ali; Khatir, Zoubir; Ousten, Jean-Pierre (Microelectron. Reliab., 2018)

Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions. - Ibrahim, Ali; Ousten, Jean-Pierre; Lallemand, Richard; Khatir, Zoubir (Microelectron. Reliab., 2016)

Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications. - Ousten, Jean-Pierre; Khatir, Zoubir (Microelectron. Reliab., 2011)

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. - Bouarroudj, M.; Khatir, Zoubir; Ousten, Jean-Pierre; Badel, F.; Dupont, Laurent; Lefebvre, Stéphane (Microelectron. Reliab., 2007)

Power module lifetime estimation from chip temperature direct measurement in an automotive traction inverter. - Coquery, Gerard; Carubelli, S.; Ousten, Jean-Pierre; Lallemand, Richard; Lecoq, Frederic; Lhotellier, Dominique; Viry, V. de; Dupuy, Philippe (Microelectron. Reliab., 2001)