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Nobuyuki Sugii
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2010 – 2019
- 2017
- [c8]Koichiro Ishibashi, Junya Kikuchi, Nobuyuki Sugii
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A 910nW delta sigma modulator using 65nm SOTB technology for mixed signal IC of IoT applications. ICICDT 2017: 1-3 - 2016
- [j16]M. S. Hadi, Nobuyuki Sugii
Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes. Microelectron. Reliab. 63: 42-45 (2016) - 2015
- [j15]Minh-Thien Hoang
A 27.6 µW 315 MHz low-complexity OOK receiver with on-off RF front-end. IEICE Electron. Express 12(7): 20150206 (2015) - [j14]Koichiro Ishibashi, Nobuyuki Sugii
A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode. IEICE Trans. Electron. 98-C(7): 536-543 (2015) - [j13]Toshitsugu Sakamoto, Yukihide Tsuji
A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM. IEEE Micro 35(6): 13-23 (2015) - [j12]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. Microelectron. Reliab. 55(2): 402-406 (2015) - [j11]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. Microelectron. Reliab. 55(2): 407-410 (2015) - [c7]Toshitsugu Sakamoto, Yukihide Tsuji
0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM. COOL Chips 2015: 1-3 - [c6]Duc-Hung Le
Design of a low-power fixed-point 16-bit digital signal processor using 65nm SOTB process. ICICDT 2015: 1-4 - [c5]Yukihide Tsuji
Sub-μW standby power, <18 μW/DMIPS@25MHz MCU with embedded atom-switch programmable logic and ROM. VLSIC 2015: 86- - 2014
- [j10]Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. Microelectron. Reliab. 54(4): 725-729 (2014) - [j9]Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. Microelectron. Reliab. 54(5): 899-904 (2014) - [c4]Koichiro Ishibashi, Nobuyuki Sugii
A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology. COOL Chips 2014: 1-3 - [c3]Shiro Kamohara, Nobuyuki Sugii
A perpetuum mobile 32bit CPU on 65nm SOTB CMOS technology with reverse-body-bias assisted sleep mode. Hot Chips Symposium 2014: 1 - 2013
- [c2]Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. ESSDERC 2013: 107-110 - 2012
- [j8]Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. Microelectron. Reliab. 52(4): 688-691 (2012) - [j7]M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors. Microelectron. Reliab. 52(6): 1039-1042 (2012) - [c1]Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. ESSDERC 2012: 89-92 - 2011
- [j6]D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii
Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. Microelectron. Reliab. 51(4): 746-750 (2011) - 2010
- [j5]Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii
SrO capping effect for La2O3/Ce-silicate gate dielectrics. Microelectron. Reliab. 50(3): 356-359 (2010) - [j4]Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. Microelectron. Reliab. 50(6): 790-793 (2010)
2000 – 2009
- 2008
- [j3]Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii
Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. Microelectron. Reliab. 48(11-12): 1769-1771 (2008) - 2007
- [j2]Joel Molina Reyes
Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress. IEICE Electron. Express 4(6): 185-191 (2007) - 2006
- [j1]Jin-Aun Ng, Nobuyuki Sugii
Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing. IEICE Electron. Express 3(13): 316-321 (2006)
Coauthor Index
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