Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory.

Hyunsang Hwang Geonhui Han Youngdong Kim Jaeseon Kim Dongmin Kim Yoori Seo Chuljun Lee Jinmyung Choi Jinwoo Lee Dongho Ahn Sechung Oh Donghwa Lee Hyunsang Hwang Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory. 1-2 2024 VLSI Technology and Circuits https://doi.org/10.1109/VLSITechnologyandCir46783.2024.10631342 conf/vlsit/2024 db/conf/vlsit/vlsit2024.html#HanKKKSLCLAOLH24 Sanghyun Ban Jangseop Lee Taehoon Kim Hyunsang Hwang Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications. 1-2 2023 VLSI Technology and Circuits https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185213 conf/vlsit/2023 db/conf/vlsit/vlsit2023.html#BanLKH23 Seongjae Heo Dongmin Kim Wooseok Choi Sanghyun Ban Ohhyuk Kwon Hyunsang Hwang Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device. 1-2 2023 VLSI Technology and Circuits https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185217 conf/vlsit/2023 db/conf/vlsit/vlsit2023.html#HeoKCBKH23 Seung-Yeol Oh Hojung Jang Hyunsang Hwang Effects of an interfacial dead layer on the ferroelectric HfZrOx films for low thermal budget. 1-5 2022 NVMTS https://doi.org/10.1109/NVMTS57339.2022.10229803 conf/nvmts/2022 db/conf/nvmts/nvmts2022.html#OhJH22 Jangseop Lee Seonghun Kim Sangmin Lee Sanghyun Ban Seongjae Heo Donghwa Lee Oleksandr Mosendz Hyunsang Hwang Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics. 320-321 2022 VLSI Technology and Circuits https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830179 conf/vlsit/2022 db/conf/vlsit/vlsit2022.html#LeeKLBHLMH22

Revannath Dnyandeo Nikam Jongwon Lee Wooseok Choi Writam Banerjee Myonghoon Kwak Manoj Yadav Hyunsang Hwang Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing. 2021 abs/2109.14935 CoRR https://arxiv.org/abs/2109.14935 db/journals/corr/corr2109.html#abs-2109-14935

Alessandro Fumarola Yusuf Leblebici Pritish Narayanan Robert M. Shelby L. L. Sanchez Geoffrey W. Burr Kibong Moon J. Jang Hyunsang Hwang Severin Sidler Non-filamentary non-volatile memory elements as synapses in neuromorphic systems. 1-6 2019 NVMTS https://doi.org/10.1109/NVMTS47818.2019.8986194 conf/nvmts/2019 db/conf/nvmts/nvmts2019.html#FumarolaLNSSBMJ19 Hyunsang Hwang Tutorial 1 - ReRAM-based analog synapse devices for neuromorphic system. xv-xviii 2018 ICICDT https://doi.org/10.1109/ICICDT.2018.8399718 conf/icicdt/2018 db/conf/icicdt/icicdt2018.html#Hwang18 Solomon Amsalu Chekol Jongmyung Yoo Hyunsang Hwang Thermally Stable Te-based Binary OTS Device for Selector Application. 1-4 2018 NVMTS https://doi.org/10.1109/NVMTS.2018.8603103 conf/nvmts/2018 db/conf/nvmts/nvmts2018.html#ChekolYH18

JaeHyun Seo Sangheon Lee Kwangmin Kim Sooeun Lee Hyunsang Hwang Byungsub Kim Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAM-Circuit Coevaluation. 1821-1830 2017 25 IEEE Trans. Very Large Scale Integr. Syst. 6 https://doi.org/10.1109/TVLSI.2017.2655730 http://doi.ieeecomputersociety.org/10.1109/TVLSI.2017.2655730 db/journals/tvlsi/tvlsi25.html#SeoLKLHK17

Pritish Narayanan Lucas L. Sanches Alessandro Fumarola Robert M. Shelby Stefano Ambrogio Jun-Woo Jang Hyunsang Hwang Yusuf Leblebici Geoffrey W. Burr Reducing circuit design complexity for neuromorphic machine learning systems based on Non-Volatile Memory arrays. 1-4 2017 ISCAS https://doi.org/10.1109/ISCAS.2017.8050988 conf/iscas/2017 db/conf/iscas/iscas2017.html#NarayananSFSAJH17 Andrea Padovani Luca Larcher Jiyong Woo Hyunsang Hwang A multiscale modeling approach for the simulation of OxRRAM devices. 1-8 2017 NVMTS https://doi.org/10.1109/NVMTS.2017.8171306 conf/nvmts/2017 db/conf/nvmts/nvmts2017.html#PadovaniLWH17 Severin Sidler Irem Boybat Robert M. Shelby Pritish Narayanan Jun-Woo Jang Alessandro Fumarola Kibong Moon Yusuf Leblebici Hyunsang Hwang Geoffrey W. Burr Large-scale neural networks implemented with Non-Volatile Memory as the synaptic weight element: Impact of conductance response. 440-443 2016 ESSDERC https://doi.org/10.1109/ESSDERC.2016.7599680 conf/essderc/2016 db/conf/essderc/essderc2016.html#SidlerBSNJFMLHB16 Alessandro Fumarola Pritish Narayanan Lucas L. Sanches Severin Sidler Jun-Woo Jang Kibong Moon Robert M. Shelby Hyunsang Hwang Geoffrey W. Burr Accelerating machine learning with Non-Volatile Memory: Exploring device and circuit tradeoffs. 1-8 2016 ICRC https://doi.org/10.1109/ICRC.2016.7738684 https://doi.ieeecomputersociety.org/10.1109/ICRC.2016.7738684 conf/icrc/2016 db/conf/icrc/icrc2016.html#FumarolaNSSJMSH16 Sangheon Lee Jeonghwan Song Changhyuk Seong Jiyong Woo Jong-Moon Choi Soon-Chan Kwon Ho-Joon Kim Hyun-Suk Kang Soo Gil Kim Hoe Gwon Jung Kee-Won Kwon Hyunsang Hwang Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier. 1-2 2016 VLSI Circuits https://doi.org/10.1109/VLSIC.2016.7573503 conf/vlsic/2016 db/conf/vlsic/vlsic2016.html#LeeSSWCKKKKJKH16

Myonglae Chu Byoungho Kim Sangsu Park Hyunsang Hwang Moongu Jeon Byoung Hun Lee Byung-Geun Lee Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron. 2410-2419 2015 62 IEEE Trans. Ind. Electron. 4 https://doi.org/10.1109/TIE.2014.2356439 db/journals/tie/tie62.html#ChuKPHJLL15

Ahmad Muqeem Sheri Hyunsang Hwang Moongu Jeon Byung-Geun Lee Neuromorphic Character Recognition System With Two PCMO Memristors as a Synapse. 2933-2941 2014 61 IEEE Trans. Ind. Electron. 6 https://doi.org/10.1109/TIE.2013.2275966 db/journals/tie/tie61.html#SheriHJL14

Euijun Cha Jiyong Woo Daeseok Lee Sangheon Lee Hyunsang Hwang Selector devices for 3-D cross-point ReRAM. 428-431 2014 ISCAS https://doi.org/10.1109/ISCAS.2014.6865157 conf/iscas/2014 db/conf/iscas/iscas2014.html#ChaWLLH14 Jun-Woo Jang Sangsu Park Yoon-Ha Jeong Hyunsang Hwang ReRAM-based synaptic device for neuromorphic computing. 1054-1057 2014 ISCAS https://doi.org/10.1109/ISCAS.2014.6865320 conf/iscas/2014 db/conf/iscas/iscas2014.html#JangPJH14 Sangheon Lee Daeseok Lee Jiyong Woo Euijun Cha Hyunsang Hwang A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament. 178-181 2013 ESSDERC https://doi.org/10.1109/ESSDERC.2013.6818848 conf/essderc/2013 db/conf/essderc/essderc2013.html#LeeLWCH13

C. B. Samantaray Hyunjun Sim Hyunsang Hwang The electronic structures and optical properties of BaTiO3 and SrTiO3 using first-principles calculations. 725-728 2005 36 Microelectron. J. 8 https://doi.org/10.1016/j.mejo.2005.03.001 db/journals/mj/mj36.html#SamantaraySH05

C. B. Samantaray Hyunjun Sim Hyunsang Hwang Electronic structures of high-k transition metal silicates: first-principles calculations. 655-658 2004 35 Microelectron. J. 8 https://doi.org/10.1016/j.mejo.2004.04.006 db/journals/mj/mj35.html#SamantaraySH04

Dongho Ahn Stefano Ambrogio Sanghyun Ban Writam Banerjee Irem Boybat Geoffrey W. Burr Euijun Cha Solomon Amsalu Chekol Jinmyung Choi Jong-Moon Choi Wooseok Choi Myonglae Chu Alessandro Fumarola Geonhui Han Seongjae Heo Hojung Jang J. Jang Jun-Woo Jang Moongu Jeon Yoon-Ha Jeong Hoe Gwon Jung Hyun-Suk Kang Byoungho Kim Byungsub Kim Dongmin Kim Ho-Joon Kim Jaeseon Kim Kwangmin Kim Seonghun Kim Soo Gil Kim Taehoon Kim Youngdong Kim Myonghoon Kwak Kee-Won Kwon Ohhyuk Kwon Soon-Chan Kwon Luca Larcher Yusuf Leblebici Byoung Hun Lee Byung-Geun Lee Chuljun Lee Daeseok Lee Donghwa Lee Jangseop Lee Jinwoo Lee Jongwon Lee Sangheon Lee Sangmin Lee Sooeun Lee Kibong Moon Oleksandr Mosendz Pritish Narayanan Revannath Dnyandeo Nikam Sechung Oh Seung-Yeol Oh Andrea Padovani Sangsu Park C. B. Samantaray Lucas L. Sanches L. L. Sanchez JaeHyun Seo Yoori Seo Changhyuk Seong Robert M. Shelby Ahmad Muqeem Sheri Severin Sidler Hyunjun Sim Jeonghwan Song Jiyong Woo Manoj Yadav Jongmyung Yoo