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David Roy 0001
Person information
- affiliation: STMicroelectronics, Crolles, France
Other persons with the same name
- David Roy — disambiguation page
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2020 – today
- 2024
- [c15]X. Federspiel, Cheikh Diouf, B. Arunachalam, David Roy, Florian Cacho:
Non-conducting Hot carrier temperature activation and temperature sense effect. IRPS 2024: 1-6 - [c14]A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier:
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. IRPS 2024: 4 - 2023
- [c13]Mathieu Sicre, David Roy, Françis Calmon:
Hot-Carrier Degradation modeling of DCR drift in SPADs. ESSDERC 2023: 61-64 - [c12]C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy:
Insight Into HCI Reliability on I/O Nitrided Devices. IRPS 2023: 1-5 - [c11]Mathieu Sicre, X. Federspiel, Bastien Mamdy, David Roy, Françis Calmon:
Characterization and modeling of DCR and DCR drift variability in SPADs. IRPS 2023: 1-5 - 2022
- [c10]Mathieu Sicre, Megan Agnew, Christel Buj, Caroline Coutier, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon:
Statistical measurements and Monte-Carlo simulations of DCR in SPADs. ESSCIRC 2022: 193-196 - 2021
- [c9]Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus
, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon:
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. ESSCIRC 2021: 143-146 - [c8]Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. ESSDERC 2021: 143-146 - [c7]Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent:
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS 2021: 1-5
2010 – 2019
- 2019
- [c6]Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix
Process Optimization for HCI Improvement in I/O Analog Devices. IRPS 2019: 1-6 - [c5]A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard:
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. IRPS 2019: 1-5 - 2018
- [j15]D. Nouguier, X. Federspiel, Gérard Ghibaudo
New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectron. Reliab. 87: 106-112 (2018) - [c4]Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS 2018: 6 - 2017
- [j14]Giulio Torrente, Jean Coignus
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. Microelectron. Reliab. 79: 281-287 (2017) - 2015
- [j13]Giulio Torrente, Jean Coignus
Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectron. Reliab. 55(9-10): 1417-1421 (2015) - [c3]A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS 2015: 5 - 2012
- [j12]Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo:
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. IEEE J. Solid State Circuits 47(5): 1075-1083 (2012) - [j11]Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix
Microscopic scale characterization and modeling of transistor degradation under HC stress. Microelectron. Reliab. 52(11): 2513-2520 (2012)
2000 – 2009
- 2008
- [c2]Patrice Garcia, Alain Chantre, Sébastien Pruvost, Pascal Chevalier
Will BiCMOS stay competitive for mmW applications ? CICC 2008: 387-394 - 2006
- [j10]C. R. Parthasarathy, Mickael Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin
Designing in reliability in advanced CMOS technologies. Microelectron. Reliab. 46(9-11): 1464-1471 (2006) - 2005
- [j9]G. Ribes, S. Bruyère, Mickael Denais, David Roy, Gérard Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. Microelectron. Reliab. 45(5-6): 841-844 (2005) - [j8]G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectron. Reliab. 45(12): 1842-1854 (2005) - 2003
- [j7]Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43(8): 1199-1202 (2003) - [j6]G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard:
New insights into the change of voltage acceleration and temperature activation of oxide breakdown. Microelectron. Reliab. 43(8): 1211-1214 (2003) - 2002
- [j5]David Roy, S. Bruyère, E. Vincent, Frederic Monsieur:
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. Microelectron. Reliab. 42(9-11): 1497-1500 (2002) - [j4]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Gate oxide Reliability assessment optimization. Microelectron. Reliab. 42(9-11): 1505-1508 (2002) - [c1]Thierry Devoivre, M. Lunenborg, C. Julien, J.-P. Carrere, P. Ferreira, W. J. Toren, A. VandeGoor, P. Gayet, T. Berger, O. Hinsinger, P. Vannier, Y. Trouiller, Y. Rody, P.-J. Goirand, R. Palla, I. Thomas, F. Guyader, David Roy, B. Borot, Nicolas Planes, Sylvie Naudet, F. Pico, D. Duca, F. Lalanne, D. Heslinga, M. Haond:
Validated 90nm CMOS Technology Platform with Low-k Copper Interconnects for Advanced System-on-Chip (SoC). MTDT 2002: 157-162 - 2001
- [j3]Sylvie Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo:
Body effect induced wear-out acceleration in ultra-thin oxides. Microelectron. Reliab. 41(7): 1031-1034 (2001) - [j2]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectron. Reliab. 41(9-10): 1295-1300 (2001) - [j1]S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectron. Reliab. 41(9-10): 1367-1372 (2001)
Coauthor Index
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last updated on 2024-12-11 20:45 CET by the dblp team
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