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Michael Nelhiebel
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2020 – today
- 2023
- [c3]D. Wieland, S. Ofner
, M. Stabentheiner, B. Butej, Christian Koller, J. Sun, Andrea Minetto, K. Reiser, Oliver Häberlen, Michael Nelhiebel, Michael Glavanovics
A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. IRPS 2023: 1-6
2010 – 2019
- 2018
- [j13]Florian Peter Pribahsnik, Mirko Bernardoni, Michael Nelhiebel, M. Mataln, A. Lindemann:
Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures. Microelectron. Reliab. 88-90: 389-392 (2018) - [j12]Thomas Walter, Golta Khatibi, Michael Nelhiebel, M. Stefenelli:
Characterization of cyclic delamination behavior of thin film multilayers. Microelectron. Reliab. 88-90: 721-725 (2018) - 2017
- [j11]Alice Lassnig
High cycle fatigue testing of thermosonic ball bonds. Microelectron. Reliab. 71: 91-98 (2017) - [j10]Florian Peter Pribahsnik, Michael Nelhiebel, M. Mataln, Mirko Bernardoni, G. Prechtl, Frank Altmann
Exploring the thermal limit of GaN power devices under extreme overload conditions. Microelectron. Reliab. 76-77: 304-308 (2017) - 2015
- [c2]Florian W. Dietachmayr, Patrick A. Hölzl, Bernhard G. Zagar, Michael Nelhiebel:
Inspection of electrical interconnections within power ICs via magneto-optical imaging. I2MTC 2015: 1497-1501 - 2014
- [c1]Olivia Bluder, Kathrin Plankensteiner
Modeling fatigue life of power semiconductor devices with ε-N fields. WSC 2014: 2609-2616 - 2013
- [j9]Thomas Aichinger, Michael Nelhiebel, Tibor Grasser
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. Microelectron. Reliab. 53(7): 937-946 (2013) - [j8]Michael Nelhiebel, Robert Illing, Thomas Detzel, S. Wöhlert, B. Auer, S. Lanzerstorfer, M. Rogalli, W. Robl, Stefan Decker, J. Fugger, Markus Ladurner:
Effective and reliable heat management for power devices exposed to cyclic short overload pulses. Microelectron. Reliab. 53(9-11): 1745-1749 (2013) - 2012
- [j7]Rainer Pelzer, Michael Nelhiebel, Robert Zink, Stefan Wöhlert, Alice Lassnig
High temperature storage reliability investigation of the Al-Cu wire bond interface. Microelectron. Reliab. 52(9-10): 1966-1970 (2012) - [j6]Stefano de Filippis, Helmut Köck
Modeling of highly anisotropic microstructures for electro-thermal simulations of power semiconductor devices. Microelectron. Reliab. 52(9-10): 2374-2379 (2012) - 2011
- [j5]Gregor Pobegen, Thomas Aichinger, Tibor Grasser
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. Microelectron. Reliab. 51(9-11): 1530-1534 (2011) - [j4]Helmut Köck
Improved thermal management of low voltage power devices with optimized bond wire positions. Microelectron. Reliab. 51(9-11): 1913-1918 (2011) - [j3]Michael Nelhiebel, Robert Illing, Christoph Schreiber, S. Wöhlert, S. Lanzerstorfer, Markus Ladurner, C. Kadow, Stefan Decker, Donald Dibra, H. Unterwalcher, M. Rogalli, W. Robl, T. Herzig, M. Poschgan, M. Inselsbacher, Michael Glavanovics
A reliable technology concept for active power cycling to extreme temperatures. Microelectron. Reliab. 51(9-11): 1927-1932 (2011)
2000 – 2009
- 2008
- [j2]Thomas Aichinger, Michael Nelhiebel, Tibor Grasser
On the temperature dependence of NBTI recovery. Microelectron. Reliab. 48(8-9): 1178-1184 (2008) - 2005
- [j1]Michael Nelhiebel, J. Wissenwasser, Thomas Detzel, A. Timmerer, E. Bertagnolli:
Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide. Microelectron. Reliab. 45(9-11): 1355-1359 (2005)
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